BSC112N06LDATMA1
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| Part Number | BSC112N06LDATMA1 |
|---|---|
| Manufacturer |
 Infineon
|
| Description | The BSC112N06LDATMA1 is a high-performance dual N-channel power MOSFET from Infineon Technologies, designed for efficient power switching and management in modern electronic systems. It features a 60V drain-to-source voltage and supports a continuous drain current of up to 20A per channel, making it suitable for a wide range of medium-voltage applications. The device is built using advanced OptiMOS™ technology, delivering a very low RDS(on) of approximately 11.2 mΩ, which minimizes conduction losses and improves overall system efficiency. Configured as a dual MOSFET (2 × N-channel), it enables compact circuit designs and reduces PCB footprint, making it ideal for synchronous rectification and DC-DC converter topologies. The BSC112N06LDATMA1 supports a wide operating temperature range from -55°C to +175°C and features a logic-level gate drive, allowing efficient operation even at lower gate voltages. With a maximum power dissipation of approximately 65W and optimized switching characteristics including low gate charge (~55nC), the device is well-suited for high-frequency and high-efficiency designs. Housed in a compact PG-TDSON-8 (SuperSO8) surface-mount package, it provides excellent thermal performance and high power density for space-constrained applications. The BSC112N06LDATMA1 is widely used in DC-DC converters, power supplies, motor control systems, synchronous rectification circuits, and industrial automation applications, where high efficiency and compact design are critical. |
| Product Group | Transistor |
| MOQ | 5000 pcs |
| SPQ | 5000 pcs |
| Figure/Case | PG-TDSON-8 (SuperSO8) |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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BSC112N06LDATMA1
BSC112N06LDATMA1