IRFH8202TRPBF
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| Part Number | IRFH8202TRPBF |
|---|---|
| Manufacturer |
 Infineon
|
| Description | The IRFH8202TRPBF is a high-performance N-channel power MOSFET developed by Infineon Technologies, designed for low-voltage, high-current switching applications. It features a drain-to-source voltage of 25V and supports high continuous drain currents up to 100A, making it suitable for demanding power management systems. The device is built using advanced MOSFET technology and offers an ultra-low RDS(on) of approximately 1.05mΩ, significantly reducing conduction losses and improving overall system efficiency. With a low gate charge (typ. ~52nC) and fast switching characteristics, the IRFH8202TRPBF enables efficient high-frequency operation, making it ideal for DC-DC converters and power switching circuits. The MOSFET operates with a gate-source voltage range of ±20V and features a low gate threshold voltage (~1.8V to 2.35V), allowing compatibility with standard logic-level drivers. Designed for robust performance, it supports an operating junction temperature range of -55°C to +150°C and offers high power dissipation capability, ensuring reliability in industrial and high-load environments. Encased in a compact PQFN 5x6 surface-mount package, the IRFH8202TRPBF provides excellent thermal performance and enables high power density PCB designs. The IRFH8202TRPBF is widely used in DC-DC converters, synchronous rectification, battery management systems, motor drivers, and high-efficiency power switching applications, where low losses and high current capability are critical. |
| Product Group | Transistor |
| MOQ | 4000 pcs |
| SPQ | 4000 pcs |
| Figure/Case | PQFN 5x6 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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IRFH8202TRPBF
IRFH8202TRPBF