Products Transistor 2N7002_R1_00001


2N7002_R1_00001


2N7002_R1_00001, Transistor, from  in Stock Hong Kong The 2N7002_R1_00001 is a compact and efficient <strong>N-channel enhancement mode MOSFET</strong> designed for low-power switching and signal control

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Part Number 2N7002_R1_00001
Manufacturer  Official Vector Logo
Description The 2N7002_R1_00001 is a compact and efficient N-channel enhancement mode MOSFET designed for low-power switching and signal control applications. Developed by Panjit International, it is widely used in digital and analog circuits requiring reliable switching performance in a small footprint.

This device features a low threshold voltage, making it suitable for logic-level operation with microcontrollers and low-voltage digital systems. It supports a drain-source voltage up to approximately 60V and provides stable switching characteristics for general-purpose applications.

The 2N7002_R1_00001 offers fast switching speed and low gate charge, enabling efficient operation in high-frequency circuits. Its low on-resistance helps reduce conduction losses and improves overall efficiency in switching designs.

Encapsulated in a SOT-23 surface-mount package, the device is optimized for compact PCB layouts and automated assembly processes. It is ideal for high-density designs where space and performance are critical.

The 2N7002_R1_00001 is commonly used in load switching, level shifting, DC-DC converters, signal routing, and general-purpose switching applications, offering a cost-effective and reliable solution for modern electronic systems.
Product Group Transistor
MOQ 3000 pcs
SPQ 3000 pcs
Figure/Case SOT-23
Package T&R Pack
PDF PDF Datasheet
Ship From Hong Kong
Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
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