BSP171PH6327XTSA1
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| Part Number | BSP171PH6327XTSA1 |
|---|---|
| Manufacturer |
 Infineon
|
| Description | The BSP171PH6327XTSA1 is a reliable P-channel enhancement-mode MOSFET developed by Infineon Technologies, designed for power switching and control applications in compact electronic systems. It supports a drain-to-source voltage of -60V, making it suitable for medium-voltage applications. The device provides a continuous drain current of up to 1.9A, enabling efficient handling of moderate power loads in switching circuits and power management designs. With a typical low on-resistance of approximately 300mΩ, the MOSFET minimizes conduction losses and improves overall system efficiency, especially in battery-powered and energy-sensitive applications. The BSP171PH6327XTSA1 operates in enhancement mode with logic-level gate drive capability, allowing easy interfacing with microcontrollers and low-voltage control circuits. It also features fast switching performance and low gate charge, making it suitable for high-speed switching applications. Designed for robust operation, the device supports junction temperatures up to +150°C and includes rugged characteristics for reliable performance under dynamic conditions. Encased in a compact SOT-223-4 surface-mount package, the MOSFET is optimized for efficient thermal performance and space-saving PCB layouts. The BSP171PH6327XTSA1 is widely used in load switching, power management, DC-DC converters, battery-operated devices, and industrial control systems, where efficient and reliable P-channel switching is required. |
| Product Group | Transistor |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | SOT-223-4 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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BSP171PH6327XTSA1
BSP171PH6327XTSA1