BSS131H6327XTSA1
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| Part Number | BSS131H6327XTSA1 |
|---|---|
| Manufacturer |
 Infineon
|
| Description | The BSS131H6327XTSA1 is a compact N-channel enhancement-mode MOSFET developed by Infineon Technologies, designed for small-signal switching and low-power applications. It offers a high drain-to-source voltage rating of 240V, making it suitable for high-voltage, low-current circuits. The device supports a continuous drain current of up to 110mA, providing reliable switching performance in signal-level and control applications. It features a low gate threshold voltage (typically 0.8V to 1.8V), enabling efficient operation with logic-level drive signals. Built using advanced SIPMOS™ technology, the BSS131H6327XTSA1 delivers stable performance with a typical on-resistance around 14Ω, helping reduce conduction losses in switching operations. The MOSFET features fast switching characteristics and low gate charge, making it suitable for high-speed switching applications such as signal amplification and low-frequency power control. It is designed for robust operation with a maximum junction temperature of +150°C and includes features such as avalanche capability and dv/dt ruggedness, ensuring reliability in demanding environments. Encased in a miniature SOT-23 surface-mount package, the device is optimized for compact PCB layouts and high-density designs. The BSS131H6327XTSA1 is widely used in switching circuits, level shifting, signal amplification, LED driving, and general-purpose low-power electronic applications, where compact size and high-voltage capability are required. |
| Product Group | Transistor |
| MOQ | 3000 pcs |
| SPQ | 3000 pcs |
| Figure/Case | SOT23-3 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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BSS131H6327XTSA1
BSS131H6327XTSA1