IRF7507TRPBF
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| Part Number | IRF7507TRPBF |
|---|---|
| Manufacturer |
 Infineon
|
| Description | The IRF7507TRPBF is a compact dual N-channel and P-channel power MOSFET developed by Infineon Technologies, designed for efficient switching and power management applications in space-constrained electronic systems. It integrates one N-channel and one P-channel MOSFET within a single package, enabling simplified circuit design for complementary switching configurations. The device supports a drain-to-source voltage of 20V and provides continuous drain currents up to 2.4A (N-channel) and 1.7A (P-channel), making it suitable for low-to-medium power applications. Built using advanced HEXFET® technology, the IRF7507TRPBF delivers low RDS(on) (approximately 140mΩ), reducing conduction losses and improving overall efficiency in switching circuits. The MOSFET features a logic-level gate drive, allowing it to be fully driven by low-voltage control signals such as those from microcontrollers or digital logic circuits. It also offers fast switching performance and low gate charge (~8nC), making it suitable for high-frequency operation. Encased in a compact Micro8 (MSOP-8) surface-mount package, the device is optimized for high-density PCB layouts and portable electronics where board space is limited. The IRF7507TRPBF is commonly used in battery-powered devices, load switching, DC-DC converters, power management circuits, and portable electronics, where efficient dual MOSFET operation and compact size are essential. |
| Product Group | Transistor |
| MOQ | 4000 pcs |
| SPQ | 4000 pcs |
| Figure/Case | MSOP-8 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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IRF7507TRPBF
IRF7507TRPBF