FQB33N10TM
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| Part Number | FQB33N10TM |
|---|---|
| Manufacturer |
 ON Semiconductor
|
| Description | The FQB33N10TM is a robust N-channel power MOSFET developed by onsemi, designed for high-efficiency switching applications in power management systems. It features a drain-to-source voltage rating of 100V, making it suitable for medium-voltage power circuits. The device supports a high continuous drain current of up to 33A, enabling reliable operation in demanding load conditions such as motor control and DC-DC conversion. It offers a low on-resistance (RDS(on)) of approximately 45mΩ, reducing conduction losses and improving overall efficiency in switching applications. The MOSFET is designed with fast switching characteristics and low gate charge, allowing efficient operation at higher switching frequencies and minimizing power dissipation. It operates with a gate-source voltage range of ±20V and provides stable performance across a wide temperature range up to +175°C junction temperature, ensuring reliability in industrial environments. Encased in a DPAK (TO-252) surface-mount package, the device offers good thermal performance and is suitable for compact and high-power PCB layouts. The FQB33N10TM is widely used in switch-mode power supplies, motor drivers, DC-DC converters, battery management systems, and general-purpose power switching applications, where high current capability and efficiency are required. |
| Product Group | Transistor |
| MOQ | 2500 pcs |
| SPQ | 2500 pcs |
| Figure/Case | TO-252 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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FQB33N10TM
FQB33N10TM