BSC155N06NDATMA1
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| Part Number | BSC155N06NDATMA1 |
|---|---|
| Manufacturer |
 Infineon
|
| Description | The BSC155N06NDATMA1 is a high-efficiency dual N-channel power MOSFET developed by Infineon Technologies, designed for switching and power management applications requiring high current capability and low conduction losses. It features a 60V drain-to-source voltage and a continuous drain current of up to 20A per channel, making it suitable for medium-voltage power designs. The device is built using advanced OptiMOS™ technology, providing a very low RDS(on) of approximately 15.5 mΩ, which helps reduce power dissipation and improve overall system efficiency. Configured as a dual MOSFET (2 × N-channel), the BSC155N06NDATMA1 enables compact circuit designs by integrating two transistors in a single package, optimizing board space and simplifying layout in synchronous switching applications. The component supports a wide operating temperature range from -55°C to +175°C and offers fast switching performance with low gate charge (~29nC), making it ideal for high-frequency switching converters and motor control systems. Housed in a compact PG-TDSON-8 (SuperSO8) surface-mount package, it provides excellent thermal performance and high power density, enabling efficient heat dissipation in compact designs. The BSC155N06NDATMA1 is widely used in DC-DC converters, synchronous rectification, motor drives, power supplies, and industrial automation systems, where high efficiency, reliability, and compact footprint are critical. |
| Product Group | Transistor |
| MOQ | 5000 pcs |
| SPQ | 5000 pcs |
| Figure/Case | PG-TDSON-8 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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BSC155N06NDATMA1
BSC155N06NDATMA1