K4B4G1646Q-BYK0
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| Part Number | K4B4G1646Q-BYK0 |
|---|---|
| Manufacturer |
 Samsung
|
| Description | The K4B4G1646Q-BYK0 is a high-performance 4Gbit DDR3L synchronous DRAM (SDRAM) developed by Samsung, designed for high-speed computing, embedded systems, and industrial applications. It features a memory organization of 256M × 16 bits, enabling efficient data storage and high-bandwidth operation. The device operates using a double data rate (DDR3L) architecture, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM. It supports data rates up to 1600 MT/s, making it suitable for demanding digital systems. Built with an advanced 8-bank internal architecture, the K4B4G1646Q-BYK0 enables concurrent memory operations and improved system efficiency. It supports programmable CAS latency, burst length (4, 8), and on-die termination (ODT), providing flexibility for modern memory controller designs. The device operates within a low voltage range of 1.283V to 1.45V (DDR3L standard), ensuring reduced power consumption while maintaining high performance, and is also compatible with standard DDR3 environments. Packaged in a compact 96-ball FBGA surface-mount form factor, the K4B4G1646Q-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. The K4B4G1646Q-BYK0 is widely used in applications such as embedded systems, industrial controllers, networking equipment, consumer electronics, and computing platforms, where high-speed, low-power, and cost-effective volatile memory solutions are required. |
| Product Group | SDRAM |
| MOQ | 96 pcs |
| SPQ | 96 pcs |
| Figure/Case | FBGA 96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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K4B4G1646Q-BYK0
K4B4G1646Q-BYK0