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IS43TR16320AL-125KBL / The IS43TR16320AL-125KBL is a high-density <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, providing high-capacity storage with efficient parallel data processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture</strong>, enabling data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to conventional SDRAM. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed computing and communication systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch design</strong>, the IS43TR16320AL-125KBL allows concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, ensuring flexibility in modern system designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and is backward compatible with <strong>1.5V DDR3 operation</strong>, reducing power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount form factor</strong>, the IS43TR16320AL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16320AL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
IS43TR16320AL-125KBL

Description: The IS43TR16320AL-125KBL is a high-density 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: tray | MOQ: 190 | MPQ: 190

IS43TR16256BL-125KBL / The IS43TR16256BL-125KBL is a high-density <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, providing high-capacity storage with efficient parallel data processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture</strong>, enabling data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it ideal for high-speed computing applications. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch design</strong>, the IS43TR16256BL-125KBL allows concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, ensuring flexibility in modern system designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and is backward compatible with <strong>1.5V DDR3 operation</strong>, enabling reduced power consumption without compromising performance. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount package</strong>, the IS43TR16256BL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16256BL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing systems</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
IS43TR16256BL-125KBL

Description: The IS43TR16256BL-125KBL is a high-density 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR16256AL-125KBL / The IS43TR16256AL-125KBL is a high-density <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient parallel data processing and large memory capacity. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, transferring data on both rising and falling edges of the clock signal to achieve higher bandwidth compared to standard SDRAM. It supports data rates up to approximately <strong>800 MHz (1600 MT/s)</strong>, making it suitable for high-speed computing systems. <br><br>The IS43TR16256AL-125KBL incorporates an advanced <strong>8-bank internal architecture with 8n prefetch</strong>, allowing concurrent memory operations and improved throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>Operating at a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and backward compatible with <strong>1.5V DDR3</strong>, the device ensures reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount package</strong>, the IS43TR16256AL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16256AL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
IS43TR16256AL-125KBL

Description: The IS43TR16256AL-125KBL is a high-density 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR16128BL-125KBL / The IS43TR16128BL-125KBL is a high-speed <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>128M × 16 bits</strong>, enabling high-density storage with efficient parallel data processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed applications. <br><br>The IS43TR16128BL-125KBL incorporates an advanced <strong>8-bank internal architecture with 8n prefetch</strong>, enabling concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern system designs. <br><br>Operating at a low voltage range of <strong>1.283V to 1.45V (DDR3L)</strong> and also compatible with standard <strong>1.5V DDR3 operation</strong>, the device ensures reduced power consumption while maintaining high performance. It is fully compatible with <strong>high-speed memory interfaces</strong>, enabling seamless integration with processors, FPGAs, and SoC platforms. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount form factor</strong>, the IS43TR16128BL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16128BL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing systems</strong>, where high-speed, low-power, and high-density volatile memory is required.
IS43TR16128BL-125KBL

Description: The IS43TR16128BL-125KBL is a high-speed 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR16128AL-125KBL / The IS43TR16128AL-125KBL is a high-speed <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for advanced embedded systems, networking equipment, and high-performance computing applications. It features a memory organization of <strong>128M × 16 bits</strong>, enabling high-density storage with efficient parallel data access. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, transferring data on both rising and falling edges of the clock signal, which significantly increases bandwidth compared to standard SDRAM. It supports clock frequencies up to approximately <strong>800 MHz</strong>, making it suitable for high-speed data processing systems. <br><br>Built with an advanced internal structure, the IS43TR16128AL-125KBL utilizes a <strong>multi-bank architecture with pipelined operation</strong>, allowing simultaneous operations and improved memory efficiency. It supports <strong>burst operations and programmable latency features</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low-voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong>, reducing power consumption while maintaining high performance. It is compatible with <strong>high-speed memory interfaces</strong>, enabling seamless integration into processors, FPGAs, and SoC-based systems. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount package</strong>, the IS43TR16128AL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16128AL-125KBL</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial automation, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-density volatile memory is required.
IS43TR16128AL-125KBL

Description: The IS43TR16128AL-125KBL is a high-speed 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS42S32800J-6TLI / The IS42S32800J-6TLI is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed embedded and industrial memory applications. It features a memory organization of <strong>4 banks × 8M × 32 bits</strong>, enabling wide data bus access and high-throughput parallel processing. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system performance. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong> with fast access times around <strong>5.4–6 ns</strong>, making it suitable for demanding high-speed digital systems. <br><br>The IS42S32800J-6TLI utilizes a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent memory operations and improved bandwidth efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for a wide range of system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device enables seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes <strong>auto-refresh, self-refresh, and power-down modes</strong> to ensure data integrity and efficient power management. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the IS42S32800J-6TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S32800J-6TLI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, communication devices, and consumer electronics</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S32800J-6TLI

Description: The IS42S32800J-6TLI is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S32400J-7TLI / The IS42S32400J-7TLI is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed embedded and industrial applications requiring wide data bus memory access. It features a memory organization of <strong>4 banks × 4M × 32 bits</strong>, enabling high-throughput parallel processing and efficient data handling. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong>, making it suitable for high-speed digital systems. <br><br>The IS42S32400J-7TLI incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent memory operations and improved bandwidth efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, providing flexibility for a wide range of system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize power consumption. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the IS42S32400J-7TLI is ideal for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S32400J-7TLI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, communication devices, and consumer electronics</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S32400J-7TLI

Description: The IS42S32400J-7TLI is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S32400F-6TLI / The IS42S32400F-6TLI is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>4 banks × 4M × 32 bits</strong>, enabling wide data bus access and high-throughput parallel processing. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed digital designs. <br><br>The IS42S32400F-6TLI utilizes a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent memory operations and improved bandwidth efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, providing flexibility for various system architectures. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device enables seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize power consumption. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the IS42S32400F-6TLI is suitable for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S32400F-6TLI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, communication devices, and consumer electronics</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S32400F-6TLI

Description: The IS42S32400F-6TLI is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16800J-7TLI / The IS42S16800J-7TLI is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for embedded systems and industrial applications requiring reliable high-speed memory. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data processing and optimized bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed digital applications. <br><br>The IS42S16800J-7TLI incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device enables seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh, self-refresh, and burst operation support</strong> to ensure data integrity and efficient power usage. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16800J-7TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16800J-7TLI</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S16800J-7TLI

Description: The IS42S16800J-7TLI is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16800F-7TLI / The IS42S16800F-7TLI is a high-speed <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for embedded systems and industrial applications requiring reliable and efficient memory performance. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling high-bandwidth parallel data processing. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system behavior. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed digital applications. <br><br>The IS42S16800F-7TLI utilizes a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures seamless integration with microcontrollers, DSPs, and FPGA-based systems. Additional features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> help maintain data integrity and optimize power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16800F-7TLI is ideal for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16800F-7TLI</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where cost-effective and high-speed volatile memory is required.
IS42S16800F-7TLI

Description: The IS42S16800F-7TLI is a high-speed 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16400J-7TLI / The IS42S16400J-7TLI is a reliable <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed embedded and industrial memory applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data access and optimized system performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized to the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong>, making it suitable for high-speed digital systems. <br><br>The IS42S16400J-7TLI incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent read and write operations to improve memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, offering flexibility for a wide range of system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize power efficiency. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16400J-7TLI is ideal for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16400J-7TLI</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
IS42S16400J-7TLI

Description: The IS42S16400J-7TLI is a reliable 64Mbit CMOS synchronous DRAM (SDRAM) d ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16400F-7TLI / The IS42S16400F-7TLI is a high-speed <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for embedded systems and industrial applications requiring reliable and efficient memory performance. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling parallel data processing and optimized bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed digital designs. <br><br>The IS42S16400F-7TLI incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system configurations. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16400F-7TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16400F-7TLI</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where cost-effective and high-speed volatile memory is required.
IS42S16400F-7TLI

Description: The IS42S16400F-7TLI is a high-speed 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16320D-7TLI / The IS42S16320D-7TLI is a high-performance <strong>512Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed embedded and industrial memory applications. It features a memory organization of <strong>4 banks × 32M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system performance. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with access times around <strong>5.4–7 ns</strong>, making it suitable for demanding digital systems. <br><br>The IS42S16320D-7TLI utilizes a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent read and write operations to improve memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures easy integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes advanced features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16320D-7TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16320D-7TLI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and communication devices</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S16320D-7TLI

Description: The IS42S16320D-7TLI is a high-performance 512Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 108 | MPQ: 108

IS42S16160J-7TLI / The IS42S16160J-7TLI is a high-speed <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded and industrial applications. It features a memory organization of <strong>4 banks × 16M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed digital systems. <br><br>The IS42S16160J-7TLI incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for a wide range of system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device can be easily integrated into microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh, self-refresh, and power-down modes</strong> to ensure data integrity and efficient power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16160J-7TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16160J-7TLI</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where high-speed and cost-effective volatile memory is required.
IS42S16160J-7TLI

Description: The IS42S16160J-7TLI is a high-speed 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16160F-7TLI / The IS42S16160F-7TLI is a high-speed <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance memory applications in embedded and industrial systems. It features a memory organization of <strong>4 banks × 16M × 16 bits</strong>, enabling efficient parallel data processing and high data throughput. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system performance. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with fast access times around <strong>5–5.4 ns</strong>, making it suitable for demanding digital applications. <br><br>The IS42S16160F-7TLI incorporates a <strong>4-bank internal architecture with pipelined operation</strong>, allowing concurrent memory access and improved bandwidth. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for a wide range of system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the device is compatible with standard <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and reduce power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16160F-7TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16160F-7TLI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and communication devices</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S16160F-7TLI

Description: The IS42S16160F-7TLI is a high-speed 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

HY57V641620HTP-6 / The HY57V641620HTP-6 is a high-performance <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> manufactured by <strong>SK Hynix</strong>, designed for applications requiring high bandwidth and reliable memory operation. It is organized as <strong>4 banks × 1M × 16 bits</strong>, enabling efficient parallel data processing and optimized system performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable behavior in high-speed systems. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for demanding digital and embedded applications. <br><br>Featuring a <strong>4-bank internal architecture with pipelined data paths</strong>, the HY57V641620HTP-6 allows concurrent memory operations, improving throughput and reducing latency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, offering flexibility for different system requirements. <br><br>The device operates at a typical supply voltage of <strong>3.3V</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based designs. Additional features such as <strong>auto-refresh, self-refresh, and data masking (UDQM/LDQM)</strong> help maintain data integrity and efficient power management. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V641620HTP-6 is optimized for space-constrained PCB layouts while maintaining reliable electrical characteristics. <br><br>The <strong>HY57V641620HTP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where cost-effective and high-speed volatile memory is required.
HY57V641620HTP-6

Description: The HY57V641620HTP-6 is a high-performance 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 500 | MPQ: 500

HY57V641620FTP-6 / The HY57V641620FTP-6 is a high-speed <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for applications requiring reliable and efficient high-bandwidth memory performance. It features an internal organization of <strong>4 banks × 1M × 16 bits</strong>, enabling parallel data processing and optimized throughput. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong> with a maximum access time of around <strong>5.4 ns</strong>, making it suitable for high-speed digital systems. <br><br>The HY57V641620FTP-6 utilizes a <strong>4-bank architecture with pipelined data access</strong>, allowing concurrent read and write operations to improve overall system efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>Operating at a typical supply voltage of <strong>3.3V</strong> and compatible with <strong>LVTTL interface levels</strong>, the device can be easily integrated into microcontrollers, DSPs, and FPGA-based systems. It also includes advanced features such as <strong>auto-refresh, self-refresh, and power-down modes</strong>, ensuring data integrity and efficient power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V641620FTP-6 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>HY57V641620FTP-6</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, printers, and consumer electronics</strong>, where stable and cost-effective volatile memory solutions are required.
HY57V641620FTP-6

Description: The HY57V641620FTP-6 is a high-speed 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V641620ETP-6 / The HY57V641620ETP-6 is a high-performance <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for applications requiring high bandwidth and efficient memory access. It is organized as <strong>4 banks × 1M × 16 bits</strong>, enabling parallel data processing and improved system performance. <br><br>The device features a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock, ensuring stable timing and predictable operation in high-speed environments. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for demanding digital systems. <br><br>With its <strong>4-bank internal architecture and pipelined data paths</strong>, the HY57V641620ETP-6 enables concurrent memory operations, significantly improving throughput. It also supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates at a typical supply voltage of <strong>3.3V</strong> and is compatible with <strong>LVTTL interface levels</strong>, allowing seamless integration with microcontrollers, DSPs, and FPGA-based systems. Advanced features such as <strong>auto-refresh, self-refresh, and data masking (UDQM/LDQM)</strong> ensure data integrity and efficient power management. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V641620ETP-6 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>HY57V641620ETP-6</strong> is widely used in applications such as <strong>embedded systems, networking equipment, consumer electronics, industrial controllers, and communication devices</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V641620ETP-6

Description: The HY57V641620ETP-6 is a high-performance 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V561620HTP-6 / The HY57V561620HTP-6 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> manufactured by <strong>SK Hynix</strong>, designed for high-speed memory applications requiring reliable and efficient data processing. It features an internal organization of <strong>4 banks × 4M × 16 bits</strong>, enabling parallel data access and improved system bandwidth. <br><br>The device operates using a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized to the rising edge of the clock signal, ensuring stable timing and high-speed performance. It supports operating frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for demanding digital systems. <br><br>The HY57V561620HTP-6 incorporates a <strong>4-bank architecture with pipelined data access</strong>, allowing concurrent operations such as read and write cycles, which enhances overall memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility across various applications. <br><br>The device operates at a typical supply voltage of <strong>3.3V</strong> and is compatible with <strong>LVTTL logic levels</strong>, ensuring easy integration with microprocessors, DSPs, and FPGA-based systems. Additional features such as <strong>auto-refresh, self-refresh, and data masking</strong> contribute to data integrity and efficient power management. <br><br>Housed in a compact <strong>54-pin TSOP-II surface-mount package</strong>, the HY57V561620HTP-6 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>HY57V561620HTP-6</strong> is widely used in applications including <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and display systems</strong>, where high-speed and cost-effective volatile memory solutions are required.
HY57V561620HTP-6

Description: The HY57V561620HTP-6 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V561620FTP-6 / The HY57V561620FTP-6 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for embedded systems, networking equipment, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for high-speed memory applications. <br><br>Built with an advanced architecture, the HY57V561620FTP-6 incorporates a <strong>4-bank internal structure with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (UDQM/LDQM)</strong> to maintain data integrity and optimize system performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V561620FTP-6 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>HY57V561620FTP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display systems</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V561620FTP-6

Description: The HY57V561620FTP-6 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V561620ETP-6 / The HY57V561620ETP-6 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for embedded systems, networking equipment, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports high-speed operation suitable for systems requiring reliable memory access and fast data throughput. <br><br>Built with an advanced architecture, the HY57V561620ETP-6 incorporates a <strong>4-bank internal structure with pipelined data paths</strong>, allowing concurrent operations and improved memory efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for different system configurations. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (UDQM/LDQM)</strong> to maintain data integrity and optimize system performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V561620ETP-6 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>HY57V561620ETP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display systems</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V561620ETP-6

Description: The HY57V561620ETP-6 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V281620HTP-6 / The HY57V281620HTP-6 is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for embedded systems, networking devices, and high-speed digital applications. It features a memory organization of <strong>4 banks × 2M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for high-speed memory applications. <br><br>Built with an advanced architecture, the HY57V281620HTP-6 incorporates a <strong>4-bank internal structure with pipelined data paths</strong>, allowing concurrent operations and improved data throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity and optimize system performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V281620HTP-6 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>HY57V281620HTP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display systems</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V281620HTP-6

Description: The HY57V281620HTP-6 is a high-performance 128Mbit synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V281620ETP-6 / The HY57V281620ETP-6 is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for embedded systems, networking devices, and high-speed digital applications. It features a memory organization of <strong>2M × 4 banks × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for high-speed memory applications. <br><br>Built on an advanced architecture, the HY57V281620ETP-6 includes a <strong>4-bank internal structure with pipelined data paths</strong>, allowing concurrent operations and improved data throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity and optimize system performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V281620ETP-6 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>HY57V281620ETP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display systems</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V281620ETP-6

Description: The HY57V281620ETP-6 is a high-performance 128Mbit synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V161610FTP-6 / The HY57V161610FTP-6 is a high-performance <strong>16Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for embedded systems, graphics applications, and memory-intensive digital designs. It features a memory organization of <strong>2 banks × 512K × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates using a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock speeds up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for high-speed memory applications. <br><br>Built with an advanced architecture, the HY57V161610FTP-6 includes <strong>internal pipelining and dual-bank structure</strong>, allowing concurrent operations and improved data throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (1, 2, 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V</strong> and is fully compatible with <strong>LVTTL interface levels</strong>, enabling easy integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity and reduce system overhead. <br><br>Packaged in a compact <strong>50-pin TSOP-II surface-mount form factor</strong>, the HY57V161610FTP-6 is optimized for space-constrained PCB designs while maintaining high reliability and signal integrity. <br><br>The <strong>HY57V161610FTP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, display systems, networking equipment, and consumer electronics</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V161610FTP-6

Description: The HY57V161610FTP-6 is a high-performance 16Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

H5TC8G63DJR-PBA / The H5TC8G63DJR-PBA is a high-density <strong>8Gbit DDR3L SDRAM memory IC</strong> developed by <strong>SK Hynix</strong>, designed for high-performance embedded systems, industrial computing, and networking applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation. <br><br>The device utilizes <strong>DDR3L (low-voltage DDR3) technology</strong> with a typical operating voltage of <strong>1.35V</strong>, significantly reducing power consumption while maintaining high-speed performance. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for demanding applications requiring fast and reliable memory access. <br><br>Built on an advanced <strong>8-bank architecture with 8n prefetch</strong>, the H5TC8G63DJR-PBA enables efficient concurrent operations and improved memory throughput. It supports essential features such as <strong>programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh</strong>, ensuring stable and efficient memory management in dynamic systems. <br><br>The device incorporates a <strong>fully synchronous interface with differential clock inputs (CK/CK#) and data strobe signals (DQS)</strong>, ensuring signal integrity and reliable operation at high frequencies. It also includes advanced functions such as <strong>on-die termination (ODT), ZQ calibration, DLL alignment, and write leveling</strong>, simplifying high-speed PCB design and improving overall system stability. <br><br>Packaged in a compact <strong>96-ball FBGA form factor</strong>, the H5TC8G63DJR-PBA is optimized for high-density PCB layouts and space-constrained designs. It typically supports operation across <strong>commercial and industrial temperature ranges</strong>, ensuring reliable performance in demanding environments. <br><br>The <strong>H5TC8G63DJR-PBA</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications, consumer electronics, and FPGA/SoC memory expansion</strong>, where high-capacity, high-speed, and low-power volatile memory is essential.
H5TC8G63DJR-PBA

Description: The H5TC8G63DJR-PBA is a high-density 8Gbit DDR3L SDRAM memory IC develop ...
Package: T&R | MOQ: 250 | MPQ: 250

H5TC8G63CFR-PBA / The H5TC8G63CFR-PBA is a high-density <strong>8Gbit DDR3L SDRAM memory IC</strong> developed by <strong>SK Hynix</strong>, designed for high-performance embedded systems, industrial computing, and networking applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device utilizes <strong>DDR3L (low-voltage DDR3) technology</strong> with a typical operating voltage of <strong>1.35V</strong>, significantly reducing power consumption while maintaining high-speed performance. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for demanding applications requiring fast and reliable memory access.<br><br>Built on an advanced <strong>8-bank architecture with 8n prefetch</strong>, the H5TC8G63CFR-PBA enables efficient concurrent operations and improved memory throughput. It supports essential features such as <strong>programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh</strong>, ensuring stable and efficient memory management in dynamic systems.<br><br>The device incorporates a <strong>fully synchronous interface with differential clock inputs (CK/CK#) and data strobe signals (DQS)</strong>, ensuring signal integrity and reliable operation at high frequencies. It also includes advanced functions such as <strong>on-die termination (ODT), ZQ calibration, DLL alignment, and write leveling</strong>, simplifying high-speed PCB design and improving overall system stability.<br><br>Packaged in a compact <strong>96-ball FBGA form factor</strong>, the H5TC8G63CFR-PBA is optimized for high-density PCB layouts and space-constrained designs. It typically supports operation across <strong>commercial and industrial temperature ranges</strong>, ensuring reliable performance in demanding environments.<br><br>The <strong>H5TC8G63CFR-PBA</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications, consumer electronics, and FPGA/SoC memory expansion</strong>, where high-capacity, high-speed, and low-power volatile memory is essential.
H5TC8G63CFR-PBA

Description: The H5TC8G63CFR-PBA is a high-density 8Gbit DDR3L SDRAM memory IC develop ...
Package: T&R | MOQ: 250 | MPQ: 250

H5TC8G63AFR-PBA / The H5TC8G63AFR-PBA is a high-density 8Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for advanced embedded systems and high-performance computing applications requiring large-capacity volatile memory. It features a memory organization of 512M × 16 bits, enabling high bandwidth and efficient parallel data transfer.<br><br>The device operates using DDR3L (low-voltage DDR3) technology with a typical supply voltage of 1.35V, significantly reducing power consumption compared to standard DDR3 while maintaining high-speed performance. It supports data rates up to approximately 1600 Mbps, making it suitable for demanding applications such as networking, industrial computing, and multimedia systems.<br><br>Built on an advanced 8-bank architecture with 8n prefetch, the H5TC8G63AFR-PBA enables efficient concurrent memory operations and improved throughput. It supports key features such as programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh, ensuring reliable and flexible memory management.<br><br>The device incorporates a fully synchronous interface with differential clock inputs (CK/CK#) and data strobes (DQS), ensuring signal integrity and stable operation at high frequencies. Additional features such as on-die termination (ODT), ZQ calibration, and DLL alignment further enhance performance and simplify high-speed PCB design.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC8G63AFR-PBA is optimized for high-density PCB layouts and space-constrained applications. It supports both commercial and industrial temperature ranges, making it suitable for demanding environments.<br><br>The H5TC8G63AFR-PBA is widely used in applications such as embedded systems, industrial automation, networking equipment, telecommunications, consumer electronics, and FPGA/SoC memory expansion, where high-speed, high-capacity, and low-power volatile memory is essential.
H5TC8G63AFR-PBA

Description: The H5TC8G63AFR-PBA is a high-density 8Gbit DDR3L SDRAM memory IC developed by SK Hynix, d ...
Package: T&R | MOQ: 250 | MPQ: 250

H5TC4G63DJR-PBA / The H5TC4G63DJR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial electronics, and high-speed computing applications. It features a memory organization of 256M × 16 bits, enabling efficient parallel data transfer and high bandwidth performance.<br><br>The device utilizes DDR3L (low-voltage DDR3) technology, operating at a typical supply voltage of 1.35V, which significantly reduces power consumption compared to standard DDR3 memory while maintaining high-speed operation. It supports data rates up to approximately 1600 Mbps, making it suitable for demanding applications requiring fast and reliable memory access.<br><br>Built on an advanced 8-bank architecture with 8n prefetch, the H5TC4G63DJR-PBA enables efficient concurrent operations and improved memory throughput. It supports essential features such as programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh, ensuring stable and efficient performance in dynamic memory environments.<br><br>The device incorporates a fully synchronous interface with differential clocking (CK/CK#) and data strobe signals (DQS), ensuring signal integrity and reliable operation at high frequencies. Additional features such as on-die termination (ODT), data masking (DM), and DLL alignment enhance performance and simplify high-speed PCB design.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC4G63DJR-PBA is optimized for high-density PCB layouts and space-constrained designs. It typically supports operation across commercial and industrial temperature ranges, ensuring reliable performance in demanding environments.<br><br>The H5TC4G63DJR-PBA is widely used in applications such as embedded systems, networking equipment, industrial automation, telecommunications, consumer electronics, and FPGA/SoC memory expansion, where high-speed and low-power volatile memory is essential.
H5TC4G63DJR-PBA

Description: The H5TC4G63DJR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 250 | MPQ: 250

H5TC4G63CFR-PBA / The H5TC4G63CFR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial electronics, and high-speed computing applications. It features a memory organization of 256M × 16 bits, enabling efficient parallel data transfer and high bandwidth performance.<br><br>The device operates using DDR3L technology (low-voltage DDR3) with a typical supply voltage of 1.35V, providing reduced power consumption while maintaining high-speed performance. It supports data rates up to approximately 1600 Mbps (800 MHz clock), making it suitable for applications requiring fast and reliable memory access.<br><br>Built on an advanced 8-bank architecture with 8n prefetch, the H5TC4G63CFR-PBA enables efficient concurrent memory operations and improved system throughput. It supports key features such as programmable CAS latency (CL5–CL13), burst lengths (4/8), auto-refresh, and self-refresh, ensuring stable and flexible memory management.<br><br>The device incorporates a fully synchronous interface with differential clocking (CK/CK#) and data strobes (DQS), ensuring signal integrity and reliable operation at high frequencies. It also includes advanced functions such as on-chip DLL alignment, data masking (DM), and on-die termination (ODT), improving performance and simplifying high-speed PCB design.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC4G63CFR-PBA is optimized for high-density PCB layouts and space-constrained applications. It operates across commercial and industrial temperature ranges (up to +95°C), ensuring reliable performance in demanding environments.<br><br>The H5TC4G63CFR-PBA is widely used in applications such as embedded systems, networking equipment, industrial automation, consumer electronics, telecommunications, and FPGA/SoC memory expansion, where high-speed and low-power volatile memory is essential.
H5TC4G63CFR-PBA

Description: The H5TC4G63CFR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 1000 | MPQ: 1000

IS46LR16320C-6BLA1 / The IS46LR16320C-6BLA1 is a high-performance 512Mbit Mobile DDR SDRAM (LPDDR) developed by Integrated Silicon Solution Inc. (ISSI), designed for low-power, high-speed embedded applications. It features a memory organization of 32M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>This device operates at clock frequencies up to 166 MHz with a fast access time of approximately 5.5 ns, providing reliable performance for memory-intensive applications. It utilizes a double data rate (DDR) architecture, transferring data on both rising and falling edges of the clock to maximize throughput.<br><br>Designed for low-power systems, the IS46LR16320C-6BLA1 operates within a supply voltage range of 1.7V to 1.95V (typ. 1.8V), making it ideal for battery-powered and portable devices. It incorporates power-saving features and efficient memory management functions to reduce overall system consumption.<br><br> Internally, the memory is organized into 4 banks, allowing concurrent operations and improved data throughput. It supports advanced features such as burst read/write operations, programmable CAS latency, auto-refresh, self-refresh, and data masking, ensuring stable and efficient performance in dynamic environments.<br><br>The device uses a parallel interface with 16-bit data bus, and includes differential clocking and data strobe (DQS) signals to ensure signal integrity at high speeds. It is housed in a compact 60-ball TFBGA package, optimized for high-density PCB layouts and space-constrained designs.<br><br>With an operating temperature range of -40°C to +85°C, the IS46LR16320C-6BLA1 is suitable for industrial and automotive-grade applications.<br><br>The IS46LR16320C-6BLA1 is widely used in applications such as embedded systems, industrial automation, portable devices, networking equipment, automotive electronics, and IoT systems, where low power consumption and reliable high-speed volatile memory are essential.
IS46LR16320C-6BLA1

Description: The IS46LR16320C-6BLA1 is a high-performance 512Mbit Mobile DDR SDRAM (LPDDR) developed by ...
Package: | MOQ: | MPQ:

H5TC4G63AFR-PBA / The H5TC4G63AFR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial electronics, and high-speed computing applications. It features a memory organization of 256M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device utilizes DDR3L (low-voltage DDR3) technology, operating at a typical supply voltage of 1.35V, which significantly reduces power consumption compared to standard DDR3 memory while maintaining high-speed performance. It supports data rates up to approximately 1600 Mbps (800 MHz clock), making it suitable for demanding applications requiring fast and reliable memory access.<br><br>Built on an advanced 8-bank architecture with 8n prefetch, the H5TC4G63AFR-PBA enables efficient concurrent operations and improved memory throughput. It supports key features such as programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh, ensuring stable and efficient memory management in dynamic systems.<br><br>The device incorporates a fully synchronous interface with differential clocking and data strobe (DQS), ensuring signal integrity and reliable operation at high frequencies. Additional features such as on-die termination (ODT) and calibration functions help simplify high-speed PCB design and improve system stability.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC4G63AFR-PBA is optimized for high-density PCB layouts and space-constrained applications.<br><br>The H5TC4G63AFR-PBA is widely used in applications such as embedded systems, networking equipment, industrial automation, consumer electronics, communication devices, and FPGA/SoC memory expansion, where high-speed and low-power volatile memory is essential.
H5TC4G63AFR-PBA

Description: The H5TC4G63AFR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 250 | MPQ: 250

H5TC2G63FFR-PBA / The H5TC2G63FFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial applications, and high-speed computing platforms. It features a memory organization of 128M × 16 bits, enabling efficient parallel data transfer and high bandwidth performance.<br><br>The device operates using DDR3L (low-voltage DDR3) technology with a typical supply voltage of 1.35V, offering reduced power consumption while maintaining high-speed operation. It supports data rates up to 1600 Mbps, making it suitable for demanding applications requiring fast and reliable memory access.<br><br>Built on an advanced multi-bank architecture (8 banks) with 8n prefetch, the H5TC2G63FFR-PBA enables efficient parallel operations and improved memory throughput. It supports key features such as burst read/write operations, programmable CAS latency, auto-refresh, and self-refresh, ensuring stable and efficient memory management.<br><br>The device utilizes a fully synchronous interface with differential clocking and data strobe (DQS), ensuring signal integrity and reliable operation at high frequencies. Additional features such as on-die termination (ODT), ZQ calibration, and DLL alignment enhance performance and simplify high-speed PCB design.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC2G63FFR-PBA is optimized for high-density layouts and space-constrained applications. It is widely used in applications such as embedded systems, networking equipment, industrial automation, consumer electronics, and communication devices, where high-speed, low-power volatile memory is essential.
H5TC2G63FFR-PBA

Description: The H5TC2G63FFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 1000 | MPQ: 1000

H5TC2G63EFR-PBA / The H5TC2G63EFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial electronics, and high-speed computing applications. It features a memory organization of 128M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device utilizes DDR3L (low-voltage DDR3) technology, operating at a typical supply voltage of 1.35V, which significantly reduces power consumption compared to standard DDR3 memory while maintaining high-speed performance. It supports data rates up to approximately 1600 Mbps, making it suitable for demanding applications requiring fast and reliable memory access.<br><br>Built on an advanced 8-bank architecture with 8n prefetch, the H5TC2G63EFR-PBA allows efficient concurrent operations and improved memory throughput. It supports key features such as programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh, ensuring stable and efficient memory management in dynamic systems.<br><br>The device incorporates a fully synchronous interface with differential clocking and data strobe (DQS), ensuring signal integrity and reliable operation at high frequencies. Additional features such as on-die termination (ODT), ZQ calibration, and DLL alignment further enhance performance and simplify high-speed PCB design.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC2G63EFR-PBA is optimized for high-density layouts and space-constrained applications. It typically operates across commercial and industrial temperature ranges, making it suitable for robust environments.<br><br>The H5TC2G63EFR-PBA is widely used in applications such as embedded systems, industrial automation, networking equipment, consumer electronics, communication devices, and FPGA/SoC memory expansion, where high-speed, low-power volatile memory is essential.
H5TC2G63EFR-PBA

Description: The H5TC2G63EFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 1000 | MPQ: 1000

H5TC2G63AFR-PBA / The H5TC2G63AFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial applications, and high-speed computing platforms. It features a memory organization of 128M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device operates using DDR3L technology with a typical supply voltage of 1.35V, providing improved power efficiency compared to standard DDR3 memory while maintaining high-speed performance. It supports data rates up to 1600 Mbps, making it suitable for applications requiring fast memory access and high throughput.<br><br>Built on an advanced multi-bank architecture (typically 8 banks), the H5TC2G63AFR-PBA enables concurrent memory operations and optimized bandwidth. It supports features such as burst read/write operations, programmable CAS latency, auto-refresh, and self-refresh, ensuring reliable and efficient memory management in dynamic systems.<br><br>The device utilizes a fully synchronous interface with differential clocking and data strobes (DQS), ensuring signal integrity and stable operation at high frequencies. Additional features such as on-die termination (ODT), ZQ calibration, and DLL alignment enhance performance and simplify system design in high-speed environments.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC2G63AFR-PBA is optimized for high-density PCB layouts and space-constrained applications. It is widely used in applications such as embedded systems, networking equipment, industrial automation, consumer electronics, and communication devices, where reliable high-speed volatile memory is essential.
H5TC2G63AFR-PBA

Description: The H5TC2G63AFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 1000 | MPQ: 1000

H5TC1G63EFR-PBA / The H5TC1G63EFR-PBA is a high-performance 1Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for high-speed embedded and computing applications. It features a memory organization of 64M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device operates using DDR3L technology (low voltage DDR3) with a typical supply voltage of 1.35V, offering improved power efficiency compared to standard DDR3 memory while maintaining high-speed performance. It supports clock frequencies up to approximately 800 MHz (1600 Mbps data rate), making it suitable for demanding applications requiring fast data access.<br><br>Built on a multi-bank architecture (8 banks) with page burst access, the H5TC1G63EFR-PBA enables efficient memory operations and improved throughput. It supports advanced features such as auto-refresh, self-refresh, burst read/write operations, and programmable latency, ensuring reliable performance in dynamic memory environments.<br><br>The device utilizes a fully synchronous interface with differential clocking and data strobes, ensuring signal integrity and stable high-speed operation. It also includes features such as on-die termination (ODT), ZQ calibration, and data masking, which enhance reliability and simplify system design in high-frequency applications.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC1G63EFR-PBA is optimized for high-density PCB layouts and space-constrained designs. It is widely used in applications such as embedded systems, networking equipment, industrial controllers, consumer electronics, and communication systems, where high-speed volatile memory and low power consumption are essential.
H5TC1G63EFR-PBA

Description: The H5TC1G63EFR-PBA is a high-performance 1Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C8M16SA-7TCN / The AS4C8M16SA-7TCN is a high-speed 128Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 8M × 16 bits, providing efficient parallel data access for processors, FPGAs, and SoC-based systems.<br><br>The device operates at a maximum clock frequency of 143 MHz with an access time of approximately 5.4 ns, enabling fast data transfer and low-latency performance in memory-intensive applications.<br><br>Built on a fully synchronous architecture, all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable system behavior. Internally, the SDRAM is organized into 4 banks (2M × 16 per bank), allowing concurrent operations and improved bandwidth efficiency.<br><br>The AS4C8M16SA-7TCN supports burst-oriented read and write operations, programmable burst lengths, and selectable CAS latency, enabling flexible optimization for different system requirements. It also includes advanced features such as auto-refresh, self-refresh, and power-down modes, ensuring data integrity while reducing system power consumption.<br><br>Operating within a supply voltage range of 3.0V to 3.6V (typ. 3.3V), the device is compatible with standard embedded and digital systems. It is housed in a compact 54-pin TSOP-II package, making it suitable for space-constrained PCB designs.<br><br>The AS4C8M16SA-7TCN is widely used in applications such as embedded systems, industrial automation, networking equipment, consumer electronics, display controllers, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C8M16SA-7TCN

Description: The AS4C8M16SA-7TCN is a high-speed 128Mbit synchronous DRAM (SDRAM) developed by Alliance ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C64M16SA-7TCN / The AS4C64M16SA-7TCN is a high-density 1Gbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications requiring large-capacity volatile memory. It features a memory organization of 64M × 16 bits and a parallel interface for efficient high-speed data transfer.<br><br>The device operates at a maximum clock frequency of approximately 143 MHz with a typical access time of ~5.4 ns, enabling reliable performance in memory-intensive applications.<br><br>Built on a fully synchronous architecture, all inputs and outputs are registered on the clock edge, ensuring stable timing and predictable system behavior. Internally, the SDRAM utilizes a multi-bank (typically 4-bank) structure, allowing interleaved access and improved bandwidth efficiency.<br><br>The AS4C64M16SA-7TCN supports advanced memory features including programmable burst lengths (1, 2, 4, 8, full page), CAS latency (CL2/CL3), and sequential/interleaved burst modes, enabling flexible optimization for different system designs. It also includes auto-refresh, self-refresh, and power-down modes, ensuring data integrity while reducing overall system power consumption.<br><br>Operating within a supply voltage range of 3.0V to 3.6V (typ. 3.3V), the device is compatible with standard embedded and digital systems. It is housed in a compact 54-pin TSOP-II package, making it suitable for space-constrained PCB layouts.<br><br>The AS4C64M16SA-7TCN is widely used in applications such as embedded systems, industrial automation, networking equipment, display controllers, multimedia systems, and FPGA/SoC memory expansion, where reliable, high-speed, and high-capacity volatile memory is required.
AS4C64M16SA-7TCN

Description: The AS4C64M16SA-7TCN is a high-density 1Gbit synchronous DRAM (SDRAM) developed by Allianc ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C64M16SA-6TCN / The AS4C64M16SA-6TCN is a high-density 1Gbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications requiring large volatile memory capacity. It features a memory organization of 64M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device supports clock frequencies up to approximately 166 MHz, delivering fast data throughput and reliable performance for memory-intensive applications such as networking equipment, industrial control systems, and FPGA-based designs. It utilizes a fully synchronous architecture, where all inputs and outputs are registered on the clock edge, ensuring stable timing and predictable system behavior.<br><br>Internally, the SDRAM is organized into multiple banks (typically 4-bank architecture), allowing interleaved operations and improved memory efficiency. It supports burst read/write operations, programmable burst lengths, and selectable CAS latency, enabling flexible optimization for various system requirements.<br><br>Operating within a supply voltage range of 3.0V to 3.6V (typ. 3.3V), the AS4C64M16SA-6TCN is compatible with standard logic systems. It includes advanced features such as auto-refresh, self-refresh, and power-down modes, ensuring data integrity while reducing overall system power consumption.<br><br>With an access time in the low nanosecond range (~5 ns class) and high-speed synchronous operation, the device is well-suited for demanding real-time processing applications. It is housed in a compact 54-pin TSOP-II package, making it ideal for space-constrained PCB designs.<br><br>The AS4C64M16SA-6TCN is widely used in applications such as embedded systems, industrial automation, networking devices, multimedia systems, display controllers, and FPGA/SoC memory expansion, where high-capacity and high-speed volatile memory is essential.
AS4C64M16SA-6TCN

Description: The AS4C64M16SA-6TCN is a high-density 1Gbit synchronous DRAM (SDRAM) developed by Allianc ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C4M16SA-7TCN / The AS4C4M16SA-7TCN is a high-speed 64Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 4M × 16 bits, enabling efficient parallel data access for processors, FPGAs, and SoC-based platforms.<br><br>The device operates at a maximum clock frequency of 143 MHz with an access time of approximately 5.4 ns, delivering reliable high-speed performance for buffering and real-time data processing applications.<br><br>Built on a fully synchronous architecture, all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable operation. Internally, the SDRAM is organized into 4 banks, allowing concurrent operations and improved memory bandwidth.<br><br>The AS4C4M16SA-7TCN supports advanced features such as programmable burst lengths (1, 2, 4, 8, full page), CAS latency (CL2/CL3), and sequential/interleaved burst modes, enabling flexible system optimization. It also includes auto-refresh, self-refresh, and power-down modes, ensuring data integrity and reducing system power consumption.<br><br>Operating within a supply voltage range of 3.0V to 3.6V (typ. 3.3V), the device is compatible with standard logic systems and embedded designs.<br><br>Housed in a compact 54-pin TSOP-II surface-mount package, the AS4C4M16SA-7TCN is ideal for space-constrained PCB layouts. It operates over a commercial temperature range of 0°C to +70°C, ensuring stable performance in typical environments.<br><br>The AS4C4M16SA-7TCN is widely used in applications such as embedded systems, industrial controllers, networking equipment, display systems, consumer electronics, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C4M16SA-7TCN

Description: The AS4C4M16SA-7TCN is a high-speed 64Mbit synchronous DRAM (SDRAM) developed by Alliance ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C32M16SA-7TCN / The AS4C32M16SA-7TCN is a high-performance 512Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-speed digital applications. It features a memory organization of 32M × 16 bits and utilizes a parallel interface for efficient high-speed data access.<br><br>The device operates at a maximum clock frequency of approximately 143 MHz with a fast access time of around 5.4 ns, delivering reliable performance for buffering, data storage, and real-time processing applications.<br><br>Internally, the SDRAM is organized into 4 banks, allowing concurrent operations and improved memory bandwidth. It supports burst read/write operations, programmable burst lengths, and CAS latency configurations, enabling flexible optimization for different system requirements.<br><br>Operating within a supply voltage range of 3.0V to 3.6V, the AS4C32M16SA-7TCN is compatible with standard 3.3V systems. It also includes key features such as auto-refresh, self-refresh, and power-down modes, helping maintain data integrity while reducing system power consumption.<br><br>The device is housed in a compact 54-pin TSOP-II surface-mount package, making it suitable for space-constrained PCB designs. It operates over a commercial temperature range (0°C to +70°C), ensuring stable performance in typical environments.<br><br>The AS4C32M16SA-7TCN is widely used in applications such as embedded systems, industrial automation, networking equipment, display systems, consumer electronics, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C32M16SA-7TCN

Description: The AS4C32M16SA-7TCN is a high-performance 512Mbit synchronous DRAM (SDRAM) developed by A ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C32M16SA-6TCN / The AS4C32M16SA-6TCN is a high-performance 512Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-speed digital applications. It features a memory organization of 32M × 16 bits and utilizes a parallel interface for fast and efficient data access.<br><br>This device supports high-speed operation with clock frequencies up to 166 MHz (speed grade dependent), enabling high bandwidth and low-latency performance in memory-intensive systems. It operates using a fully synchronous architecture, where all inputs and outputs are referenced to the clock signal, ensuring stable and predictable timing behavior.<br><br>Internally, the SDRAM is organized into 4 banks, allowing interleaved access and improved data throughput. It supports burst read/write operations, programmable burst lengths (1, 2, 4, 8, full page), and selectable CAS latency (CL2/CL3), providing flexibility for different system designs.<br><br>The AS4C32M16SA-6TCN operates within a supply voltage range of 3.0V to 3.6V (typ. 3.3V) and features an access time of approximately 5.4 ns, ensuring fast response in high-speed applications. It also includes advanced memory management features such as auto-refresh, self-refresh, power-down modes, and data masking, helping to maintain data integrity and reduce power consumption.<br><br>Packaged in a compact 54-pin TSOP-II surface-mount form factor, the device is well-suited for space-constrained PCB designs. It typically operates over a commercial temperature range of 0°C to +70°C, ensuring reliable performance in standard environments.<br><br>The AS4C32M16SA-6TCN is widely used in applications such as embedded systems, industrial automation, networking equipment, consumer electronics, display systems, and FPGA/SoC memory expansion, where reliable, high-speed volatile memory is required.
AS4C32M16SA-6TCN

Description: The AS4C32M16SA-6TCN is a high-performance 512Mbit synchronous DRAM (SDRAM) developed by A ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C2M32SA-7TCN / The AS4C2M32SA-7TCN is a high-speed 64Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 2M × 32 bits, providing efficient parallel data access for processors, FPGAs, and SoC platforms.<br><br>The device operates at a maximum clock frequency of 143 MHz with an access time of approximately 5.5 ns, enabling fast data transfer and low-latency performance in memory-intensive systems.<br><br>Built on a fully synchronous architecture, all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable operation. Internally, the SDRAM is organized into four banks (quad-bank architecture), allowing concurrent operations and improved memory bandwidth.<br><br>The AS4C2M32SA-7TCN supports advanced memory features such as programmable burst lengths (1, 2, 4, 8, or full page), CAS latency (CL2/CL3), and sequential/interleaved burst modes, enabling flexible optimization for different system requirements.<br><br>Operating within a supply voltage range of 3.0V to 3.6V (typ. 3.3V), the device is compatible with standard logic systems. It also includes auto-refresh and self-refresh modes, reducing system overhead and maintaining data integrity during idle periods.<br><br>Packaged in a compact 86-pin TSOP-II surface-mount form factor, the AS4C2M32SA-7TCN is suitable for space-constrained PCB designs. It operates over a commercial temperature range of 0°C to +70°C, ensuring stable performance in typical environments.<br><br>The AS4C2M32SA-7TCN is widely used in applications such as embedded systems, industrial controllers, networking equipment, display systems, consumer electronics, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C2M32SA-7TCN

Description: The AS4C2M32SA-7TCN is a high-speed 64Mbit synchronous DRAM (SDRAM) developed by Alliance ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C16M8SA-7TCN / The AS4C16M8SA-7TCN is a high-speed 128Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 16M × 8 bits, enabling efficient parallel data access for microprocessors, FPGAs, and SoC-based systems.<br><br>The device operates at a maximum clock frequency of approximately 143 MHz with an access time around 5.4 ns, providing fast data throughput and low latency performance suitable for memory-intensive applications.<br><br>Built on a fully synchronous architecture, all inputs and outputs are registered on the clock edge, ensuring stable timing and predictable system behavior. The internal structure consists of multiple banks (typically 4 banks), allowing concurrent operations and improved bandwidth utilization.<br><br>The AS4C16M8SA-7TCN supports burst read and write operations, programmable burst lengths (1, 2, 4, 8, or full page), and selectable CAS latency (CL2/CL3), providing flexibility for different system requirements. It also includes advanced features such as auto-refresh, self-refresh, and power-down modes, helping reduce system power consumption while maintaining data integrity.<br><br>Operating within a supply voltage range of 3.0V to 3.6V, the device is compatible with standard 3.3V systems. It uses a parallel interface (LVTTL compatible), making it suitable for high-speed communication with digital processing units.<br><br>Packaged in a compact 54-pin TSOP-II surface-mount form factor, the AS4C16M8SA-7TCN is optimized for space-constrained PCB designs. It operates over a commercial temperature range of 0°C to +70°C, ensuring reliable performance in typical environments.<br><br>The AS4C16M8SA-7TCN is widely used in applications such as embedded systems, industrial controllers, networking equipment, display systems, consumer electronics, and FPGA/SoC memory expansion, where reliable, high-speed volatile memory is required.
AS4C16M8SA-7TCN

Description: The AS4C16M8SA-7TCN is a high-speed 128Mbit synchronous DRAM (SDRAM) developed by Alliance ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C16M16SA-7TCN / The AS4C16M16SA-6TCN is a high-speed 256Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 16M × 16 bits and utilizes a parallel interface for fast data access.<br><br>The device operates at clock frequencies up to 166 MHz with a fast access time of approximately 5 ns, enabling high-speed data transfer and low latency performance in memory-intensive systems.<br><br>Internally, the SDRAM is organized into 4 banks, allowing concurrent operations and improved bandwidth. It supports burst-oriented read and write operations, where data is accessed sequentially after an initial address is specified, optimizing throughput for high-speed applications.<br><br>Operating within a supply voltage range of 3.0V to 3.6V, the AS4C16M16SA-6TCN is compatible with standard 3.3V systems. It also supports programmable CAS latency (CL2/CL3), synchronous clock operation, and efficient pipelined architecture for reliable performance.<br><br>Packaged in a 54-pin TSOP-II surface-mount form factor, the device is optimized for space-constrained PCB designs and cost-effective embedded solutions. It operates within a commercial temperature range of 0°C to +70°C, ensuring stable performance in typical environments.<br><br>The AS4C16M16SA-6TCN is widely used in applications such as embedded systems, industrial controllers, networking equipment, consumer electronics, display systems, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C16M16SA-7TCN

Description: The AS4C16M16SA-6TCN is a high-speed 256Mbit synchronous DRAM (SDRAM) developed by Allianc ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C16M16SA-6TCN / The AS4C16M16SA-6TCN is a high-speed 256Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 16M × 16 bits and utilizes a parallel interface for fast data access.<br><br>The device operates at clock frequencies up to 166 MHz with a fast access time of approximately 5 ns, enabling high-speed data transfer and low latency performance in memory-intensive systems.<br><br>Internally, the SDRAM is organized into 4 banks, allowing concurrent operations and improved bandwidth. It supports burst-oriented read and write operations, where data is accessed sequentially after an initial address is specified, optimizing throughput for high-speed applications.<br><br>Operating within a supply voltage range of 3.0V to 3.6V, the AS4C16M16SA-6TCN is compatible with standard 3.3V systems. It also supports programmable CAS latency (CL2/CL3), synchronous clock operation, and efficient pipelined architecture for reliable performance.<br><br>Packaged in a 54-pin TSOP-II surface-mount form factor, the device is optimized for space-constrained PCB designs and cost-effective embedded solutions. It operates within a commercial temperature range of 0°C to +70°C, ensuring stable performance in typical environments.<br><br>The AS4C16M16SA-6TCN is widely used in applications such as embedded systems, industrial controllers, networking equipment, consumer electronics, display systems, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C16M16SA-6TCN

Description: The AS4C16M16SA-6TCN is a high-speed 256Mbit synchronous DRAM (SDRAM) developed by Allianc ...
Package: T&R | MOQ: 1000 | MPQ: 1000

IR2104PBF / The IR2104PBF is a high-voltage, high-speed half-bridge gate driver IC developed by Infineon Technologies, designed to drive both high-side and low-side N-channel MOSFETs or IGBTs in power switching applications. It integrates two output channels, enabling efficient control of half-bridge configurations in power electronics systems.<br><br>The device supports a high-side floating channel up to 600V, making it suitable for high-voltage applications such as motor drives, inverters, and power conversion systems. It operates with a gate drive supply range of 10V to 20V and is compatible with standard 3.3V, 5V, and 15V logic inputs, allowing easy interfacing with microcontrollers and digital control circuits.<br><br>The IR2104PBF features peak output currents of approximately 210 mA (source) and 360 mA (sink), enabling fast switching of power transistors. It includes internally fixed dead-time and cross-conduction prevention logic, ensuring safe operation by preventing shoot-through conditions in half-bridge circuits.<br><br>Additional integrated features such as undervoltage lockout (UVLO), shutdown control input, and matched propagation delays improve system reliability and simplify circuit design. The device also offers fast switching characteristics with typical propagation delays of ~680 ns (turn-on) and ~150 ns (turn-off).<br><br>Housed in a standard PDIP-8 package, the IR2104PBF is easy to implement in both prototyping and industrial designs. It is widely used in applications such as motor control systems, DC-AC inverters, SMPS (switch-mode power supplies), UPS systems, and power conversion circuits, where reliable high/low-side gate driving is required.
IR2104PBF

Description: The IR2104PBF is a high-voltage, high-speed half-bridge gate driver IC developed by Infine ...
Package: TUBE | MOQ: 1000 | MPQ: 50

ADXL345BCCZ-RL / The ADXL345BCCZ-RL is a compact, ultra-low power 3-axis digital MEMS accelerometer developed by Analog Devices, designed for motion detection, orientation sensing, and vibration monitoring applications. It provides high-resolution measurement (13-bit) with selectable ranges of ±2g, ±4g, ±8g, and ±16g, enabling precise detection of both small movements and high-impact events.<br><br>The device measures both static acceleration (gravity) for tilt sensing and dynamic acceleration caused by motion, shock, or vibration. Its high sensitivity (~4 mg/LSB) allows detection of inclination changes of less than 1°, making it suitable for precision orientation applications.<br><br>The ADXL345 features flexible digital communication via I2C and SPI interfaces, ensuring easy integration with microcontrollers, embedded systems, and platforms such as Arduino, ESP32, and STM32. It operates over a wide supply voltage range of 2.0V to 3.6V and supports adjustable bandwidth from 0.05 Hz to 1.6 kHz, allowing optimization between power consumption and performance.<br><br>Advanced embedded functions include activity/inactivity detection, single/double tap sensing, free-fall detection, and a 32-level FIFO buffer, reducing processor load and enabling intelligent motion-based power management.<br><br>With its small size, low power consumption, and integrated motion processing features, the ADXL345BCCZ-RL is widely used in applications such as mobile devices, gaming controllers, wearable electronics, industrial monitoring systems, vibration analysis, and IoT motion sensing applications, where accurate and efficient motion detection is required.
ADXL345BCCZ-RL

Description: The ADXL345BCCZ-RL is a compact, ultra-low power 3-axis digital MEMS accelerometer develop ...
Package: T&R | MOQ: 500 | MPQ: 500

R307S / The R307S is a compact and high-performance optical fingerprint sensor module designed for biometric authentication and identification applications. It integrates an optical sensor, DSP processor, and fingerprint recognition algorithm into a single module, enabling fast and accurate fingerprint capture, processing, and matching.<br><br>The module operates within a supply voltage range of approximately 4.2V to 6.0V and typically consumes around 50–75 mA, making it suitable for embedded and portable systems. It supports both UART (TTL) and optional USB interfaces, allowing easy integration with microcontrollers such as Arduino, ESP32, STM32, and Raspberry Pi.<br><br>The R307S features a 500 DPI optical resolution and high-speed performance, with fingerprint scanning times under 0.3 seconds and verification speeds around 0.2 seconds, ensuring quick and reliable user authentication. It supports both 1:1 verification and 1:N identification modes, with onboard flash memory capable of storing up to 1000 fingerprint templates.<br><br>The module includes an integrated LED indicator and advanced image processing capabilities, allowing accurate detection even under varying environmental conditions. It also offers configurable security levels and very low false acceptance and rejection rates, making it suitable for secure systems.<br><br>With its all-in-one design, ease of integration, and reliable performance, the R307S is widely used in applications such as access control systems, attendance machines, smart locks, safes, IoT security devices, and embedded biometric authentication systems, where secure and fast identity verification is required.
R307S

Description: The R307S is a compact and high-performance optical fingerprint sensor module designed for ...
Package: TRAY | MOQ: 100 | MPQ: 100

PN5321A3HN/C106,55 / The PN5321A3HN/C106,55 is a highly integrated 13.56 MHz NFC/RFID controller IC developed by NXP Semiconductors, designed for contactless communication applications including smart cards, access control, and mobile NFC systems. It combines analog and digital RF functionality with an embedded microcontroller core, reducing the processing load on the host system.<br><br>This device supports multiple communication standards including ISO/IEC 14443 Type A/B, MIFARE®, FeliCa, and NFC (ISO/IEC 18092), enabling compatibility with a wide range of contactless cards and NFC devices. It can operate in multiple modes such as reader/writer, card emulation, and peer-to-peer communication, making it highly versatile for modern NFC applications.<br><br>The PN5321A3HN/C106,55 supports flexible host interfaces including SPI, I2C, and UART, allowing easy integration with microcontrollers, embedded systems, and industrial controllers. It operates within a supply voltage range of 2.7V to 5.5V, ensuring compatibility with a wide variety of digital platforms.<br><br>With integrated RF front-end circuitry, modulation/demodulation blocks, and protocol handling (CRC, parity, framing), the IC minimizes external component requirements and simplifies system design. It supports data transfer rates up to 424 kbit/s and typical communication distances up to 50 mm, depending on antenna design.<br><br>Packaged in a compact HVQFN-40 surface-mount form factor, the PN5321A3HN/C106,55 is suitable for space-constrained designs. It is widely used in applications such as contactless payment terminals, access control systems, ticketing, smart cards, IoT security, mobile devices, and industrial NFC systems, where reliable and secure short-range wireless communication is required.
PN5321A3HN/C106,55

Description: The PN5321A3HN/C106,55 is a highly integrated 13.56 MHz NFC/RFID controller IC developed b ...
Package: T&R | MOQ: 490 | MPQ: 490

MFRC522-MOD / The MFRC522 Module is a compact and widely used 13.56 MHz RFID/NFC reader module based on the MFRC522 chip from NXP Semiconductors. It is designed for easy integration into embedded systems, providing a complete contactless communication solution with minimal external components.<br><br>This module supports ISO/IEC 14443 Type A and MIFARE® protocols, allowing it to read and write various contactless smart cards and RFID tags such as MIFARE Classic, Ultralight, and other compatible cards. It is commonly used for identification, authentication, and access control applications.<br><br>The MFRC522 module communicates via a SPI interface, ensuring fast and reliable data exchange with microcontrollers such as Arduino, ESP8266, ESP32, Raspberry Pi, and STM32 platforms. It typically operates at 3.3V logic levels, making it suitable for low-voltage embedded systems.<br><br>The module includes an onboard antenna, crystal oscillator, and passive components, simplifying hardware design. It supports data transfer rates up to 848 kbps and offers a typical reading distance of up to 3–5 cm, depending on antenna design and tag type.<br><br>With its small PCB form factor and standard pin header interface, the MFRC522 module is easy to use in prototyping and production environments. It is widely used in applications such as access control systems, attendance tracking, contactless payment prototypes, IoT security, smart locks, and RFID-based identification systems.
MFRC522-MOD

Description: The MFRC522 Module is a compact and widely used 13.56 MHz RFID/NFC reader module based on ...
Package: TRAY | MOQ: 100 | MPQ: 100

MFRC522 01HN1,157 / The MFRC52201HN1,157 is a highly integrated 13.56 MHz RFID/NFC reader and writer IC developed by NXP Semiconductors, designed for contactless communication systems. It supports ISO/IEC 14443 Type A and MIFARE® protocols, making it widely used in access control, payment systems, and identification applications.<br><br>The device integrates a complete RF front-end, including a transmitter capable of directly driving an antenna and a receiver for demodulating and decoding signals from contactless cards and tags. This eliminates the need for additional RF circuitry and simplifies system design.<br><br>The MFRC52201HN1,157 supports multiple host interfaces including SPI, I2C, and UART, enabling flexible integration with microcontrollers, embedded systems, and industrial controllers. It operates with a supply voltage range of 2.5V to 3.3V and supports data transfer rates up to 848 kbit/s, ensuring efficient communication with RFID/NFC devices.<br><br>The IC includes a digital processing unit that handles framing, error detection (CRC, parity), and protocol management, reducing the workload on the host processor. It also supports a wide range of MIFARE products such as Classic, Ultralight, DESFire, and Plus cards.<br><br>Packaged in a compact 32-pin HVQFN surface-mount form factor, the MFRC52201HN1,157 is optimized for space-constrained designs. It operates over a temperature range of -25°C to +85°C, making it suitable for both consumer and industrial environments.<br><br>The MFRC52201HN1,157 is widely used in applications such as RFID readers, contactless payment terminals, access control systems, smart cards, NFC-enabled devices, public transportation systems, and IoT security applications, where reliable and efficient contactless communication is required.
MFRC522 01HN1,157

Description: The MFRC52201HN1,157 is a highly integrated 13.56 MHz RFID/NFC reader and writer IC develo ...
Package: TRAY | MOQ: 490 | MPQ: 490













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