K4B4G1646D-BCK0
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| Part Number | K4B4G1646D-BCK0 |
|---|---|
| Manufacturer |
 Samsung
|
| Description | The K4B4G1646D-BCK0 is a high-performance 4Gbit DDR3 synchronous DRAM (SDRAM) developed by Samsung, designed for high-speed embedded systems, computing platforms, and industrial applications. It features a memory organization of 256M × 16 bits, enabling efficient data storage and high-bandwidth processing. The device operates using a double data rate (DDR3) architecture, transferring data on both the rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. It supports data rates up to approximately 2133 Mbps, making it suitable for demanding high-speed applications. Built with an advanced 8-bank internal architecture and pipelined operation, the K4B4G1646D-BCK0 enables concurrent memory access and improved system efficiency. It supports programmable CAS latency, burst length (4, 8), and on-die termination (ODT), providing flexibility for modern memory controller designs. The device operates at a typical supply voltage of 1.5V, ensuring stable performance and compatibility with standard DDR3 memory interfaces. It is suitable for integration with microprocessors, FPGAs, and SoC-based platforms. Packaged in a compact 96-ball FBGA surface-mount form factor, the K4B4G1646D-BCK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. The K4B4G1646D-BCK0 is widely used in applications such as embedded systems, networking equipment, industrial controllers, consumer electronics, and computing devices, where high-speed and cost-effective volatile memory solutions are required. |
| Product Group | SDRAM |
| MOQ | 96 pcs |
| SPQ | 96 pcs |
| Figure/Case | FBGA 96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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K4B4G1646D-BCK0
K4B4G1646D-BCK0