K4B8G1646E-BYK0
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| Part Number | K4B8G1646E-BYK0 |
|---|---|
| Manufacturer |
 Samsung
|
| Description | The K4B8G1646E-BYK0 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) developed by Samsung, designed for high-performance embedded systems, networking equipment, and advanced computing applications. It features a memory organization of 512M × 16 bits, enabling large-capacity data storage and efficient parallel data processing. The device operates using a double data rate (DDR3L) architecture, transferring data on both rising and falling edges of the clock signal to significantly increase bandwidth compared to conventional SDRAM technologies. It supports data rates up to approximately 1600 MT/s (800 MHz clock), making it suitable for high-speed digital systems. Built with an advanced 8-bank internal architecture and 8n prefetch, the K4B8G1646E-BYK0 enables concurrent operations and improved memory efficiency. It supports programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT), providing flexibility for modern memory controller designs. The device operates within a low voltage range of 1.283V to 1.45V (DDR3L standard) and is also compatible with 1.5V DDR3 systems, ensuring reduced power consumption while maintaining high performance. Packaged in a compact 96-ball FBGA surface-mount form factor, the K4B8G1646E-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. The K4B8G1646E-BYK0 is widely used in applications such as embedded systems, industrial controllers, networking devices, consumer electronics, and high-performance computing platforms, where high-speed, low-power, and high-capacity volatile memory is required. |
| Product Group | SDRAM |
| MOQ | 96 pcs |
| SPQ | 96 pcs |
| Figure/Case | FBGA 96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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K4B8G1646E-BYK0
K4B8G1646E-BYK0