K4B2G1646D-BCK0
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| Part Number | K4B2G1646D-BCK0 |
|---|---|
| Manufacturer |
 Samsung
|
| Description | The K4B2G1646D-BCK0 is a high-performance 2Gbit DDR3 synchronous DRAM (SDRAM) developed by Samsung, designed for high-speed embedded systems, computing platforms, and consumer electronics. It features a memory organization of 128M × 16 bits, enabling efficient data storage and high-bandwidth operation. The device operates using a double data rate (DDR3) architecture, transferring data on both rising and falling edges of the clock signal to significantly increase throughput. It supports data rates up to approximately 1600 Mbps, making it suitable for demanding digital applications. Built with an advanced 8-bank internal architecture and 8n prefetch, the K4B2G1646D-BCK0 enables concurrent memory operations and improved system efficiency. It supports programmable CAS latency, burst length (4, 8), and on-die termination (ODT), offering flexibility for modern memory controller designs. The device operates at a supply voltage of approximately 1.5V with a typical operating range of 1.425V to 1.575V, ensuring stable performance and compatibility with standard DDR3 interfaces. Packaged in a compact 96-ball FBGA surface-mount form factor, the K4B2G1646D-BCK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. The K4B2G1646D-BCK0 is widely used in applications such as embedded systems, single-board computers, industrial controllers, networking equipment, and consumer electronics, where high-speed and cost-effective volatile memory solutions are required. |
| Product Group | SDRAM |
| MOQ | 96 pcs |
| SPQ | 96 pcs |
| Figure/Case | FBGA 96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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K4B2G1646D-BCK0
K4B2G1646D-BCK0