K4B2G1646E-BCK0
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| Part Number | K4B2G1646E-BCK0 |
|---|---|
| Manufacturer |
 Samsung
|
| Description | The K4B2G1646E-BCK0 is a high-performance 2Gbit DDR3 synchronous DRAM (SDRAM) developed by Samsung, designed for high-speed embedded systems, computing platforms, and consumer electronics. It features a memory organization of 128M × 16 bits, providing efficient data storage and high-bandwidth performance. The device operates using a double data rate (DDR3) architecture, transferring data on both the rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. It supports data rates up to approximately 1600 Mbps, making it suitable for high-speed digital applications. Built with an advanced 8-bank internal architecture and 8n prefetch, the K4B2G1646E-BCK0 enables concurrent operations and improved memory efficiency. It supports programmable CAS latency, burst length (4, 8), and on-die termination (ODT), ensuring flexibility for modern system designs. The device operates at a supply voltage of approximately 1.5V, offering stable performance and compatibility with standard DDR3 memory interfaces. It integrates seamlessly with processors, FPGAs, and SoC-based systems. Packaged in a compact 96-ball FBGA surface-mount form factor, the K4B2G1646E-BCK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. The K4B2G1646E-BCK0 is widely used in applications such as embedded systems, industrial controllers, networking equipment, consumer electronics, and computing devices, where high-speed and cost-effective volatile memory solutions are required. |
| Product Group | SDRAM |
| MOQ | 96 pcs |
| SPQ | 96 pcs |
| Figure/Case | FBGA 96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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K4B2G1646E-BCK0
K4B2G1646E-BCK0