K4B2G1646Q-BYK0
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| Part Number | K4B2G1646Q-BYK0 |
|---|---|
| Manufacturer |
 Samsung
|
| Description | The K4B2G1646Q-BYK0 is a high-performance 2Gbit DDR3L synchronous DRAM (SDRAM) developed by Samsung, designed for high-speed embedded systems, computing platforms, and industrial applications. It features a memory organization of 128M × 16 bits, providing efficient data storage and high-bandwidth performance. The device operates using a double data rate (DDR3L) architecture, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing throughput compared to standard SDRAM. It supports data rates up to approximately 1600 Mbps, making it suitable for demanding high-speed digital systems. Built with an advanced 8-bank internal architecture and 8n prefetch, the K4B2G1646Q-BYK0 enables concurrent operations and improved memory efficiency. It supports programmable CAS latency, burst length (4, 8), and on-die termination (ODT), providing flexibility for modern memory controller designs. The device operates within a low voltage range of 1.283V to 1.45V (DDR3L standard), ensuring reduced power consumption while maintaining high performance, and remains compatible with standard DDR3 interfaces. Packaged in a compact 96-ball FBGA surface-mount form factor, the K4B2G1646Q-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. The K4B2G1646Q-BYK0 is widely used in applications such as embedded systems, industrial controllers, networking equipment, consumer electronics, and computing devices, where high-speed and low-power volatile memory solutions are required. |
| Product Group | SDRAM |
| MOQ | 96 pcs |
| SPQ | 96 pcs |
| Figure/Case | FBGA 96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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K4B2G1646Q-BYK0
K4B2G1646Q-BYK0