All Products SDRAM

NT5CC512M8EQ-EKI / The <strong>NT5CC512M8EQ-EKI</strong> is a high-performance <strong>4Gbit DDR3L synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and computing applications requiring efficient memory bandwidth and reduced power consumption.<br><br>The device is organized as <strong>512M x 8 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR3L) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.35V</strong>, the NT5CC512M8EQ-EKI supports data rates up to <strong>1866 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. Its low-voltage operation reduces overall power consumption compared to standard DDR3 memory solutions.<br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>78-ball FBGA surface-mount form factor</strong>, the NT5CC512M8EQ-EKI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>NT5CC512M8EQ-EKI</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms</strong> where high-speed volatile memory and low power operation are required.
NT5CC512M8EQ-EKI

Description: The NT5CC512M8EQ-EKI is a high-performance 4Gbit DDR3L synchronou ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CB64M16GP-EK / The <strong>NT5CB64M16GP-EK</strong> is a high-performance <strong>1Gbit DDR3 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and computing applications requiring reliable memory bandwidth and stable performance.<br><br>The device is organized as <strong>64M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR3) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. <br><br>Operating at a nominal voltage of <strong>1.5V</strong>, the NT5CB64M16GP-EK supports data rates up to <strong>1866 Mbps</strong> with a clock frequency around <strong>933 MHz</strong>, making it suitable for high-speed applications while maintaining balanced power consumption. <br><br>The device includes key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and efficient power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CB64M16GP-EK is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance. <br><br>The <strong>NT5CB64M16GP-EK</strong> is widely used in <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and computing platforms</strong> where stable and high-speed volatile memory is required.
NT5CB64M16GP-EK

Description: The NT5CB64M16GP-EK is a high-performance 1Gbit DDR3 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT6CL256M32AM-H1 / The <strong>NT6CL256M32AM-H1</strong> is a high-performance <strong>8Gbit Mobile DDR3 SDRAM (LPDDR3)</strong> developed by <strong>Nanya Technology</strong>, designed for mobile, embedded, and high-efficiency computing applications requiring low power consumption and high data throughput.<br><br>The device is organized as <strong>256M x 32 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved bandwidth efficiency. It utilizes a <strong>double data rate interface</strong>, allowing data transfer on both clock edges for high-speed performance.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT6CL256M32AM-H1 supports data rates up to <strong>1866 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. It also supports a wide operating temperature range, ensuring stable performance in various environments.<br><br>The device integrates advanced power-saving features such as <strong>self-refresh, deep power-down modes, and optimized standby operation</strong>, helping to reduce overall system power consumption while maintaining data integrity.<br><br>Packaged in a compact <strong>178-ball FBGA surface-mount form factor</strong>, the NT6CL256M32AM-H1 is optimized for high-density PCB layouts and reliable signal integrity in modern electronic systems.<br><br>The <strong>NT6CL256M32AM-H1</strong> is widely used in <strong>smartphones, tablets, embedded systems, IoT devices, industrial electronics, and communication equipment</strong> where low power consumption and high-speed volatile memory are required.
NT6CL256M32AM-H1

Description: The NT6CL256M32AM-H1 is a high-performance 8Gbit Mobile DDR3 SDRA ...
Package: T&R | MOQ: 1000 | MPQ: 1000

NT5AD512M16C4-HR / The <strong>NT5AD512M16C4-HR</strong> is a high-performance <strong>8Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial computing, and high-speed memory applications requiring reliable bandwidth and low power consumption.<br><br>The device is organized as <strong>512M x 16 bits</strong> and features an advanced <strong>multi-bank architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD512M16C4-HR supports data rates up to <strong>2666 Mbps</strong> with a clock frequency around <strong>1333 MHz</strong>, making it suitable for high-speed and energy-efficient system designs.<br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD512M16C4-HR is optimized for high-density PCB layouts while maintaining excellent signal integrity and thermal performance.<br><br>The <strong>NT5AD512M16C4-HR</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, computing platforms, and consumer electronics</strong> where high-speed volatile memory and reliable operation are required.
NT5AD512M16C4-HR

Description: The NT5AD512M16C4-HR is a high-performance 8Gbit DDR4 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5AD256M16E4-JR / The <strong>NT5AD256M16E4-JR</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial computing, and high-speed memory applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>multi-bank architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD256M16E4-JR supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. Its architecture is optimized for stable performance and reduced power consumption compared to previous DDR generations.<br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD256M16E4-JR is optimized for high-density PCB layouts while maintaining excellent signal integrity and thermal performance.<br><br>The <strong>NT5AD256M16E4-JR</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, computing platforms, and consumer electronics</strong> where high-speed volatile memory and reliable operation are required.
NT5AD256M16E4-JR

Description: The NT5AD256M16E4-JR is a high-performance 4Gbit DDR4 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CC64M16GP-DI / The <strong>NT5CC64M16GP-DI</strong> is a high-performance <strong>1Gbit DDR3L synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and computing applications requiring efficient memory bandwidth and low power consumption.<br><br>The device is organized as <strong>64M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel operations and improved data throughput. It utilizes a <strong>double data rate (DDR) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for higher efficiency.<br><br>Operating at a nominal voltage of <strong>1.35V</strong>, the NT5CC64M16GP-DI supports data rates up to <strong>1600 Mbps</strong> with a clock frequency around <strong>800 MHz</strong>, making it suitable for high-speed and energy-efficient designs.<br><br>The device includes key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring data integrity and optimized power management in various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC64M16GP-DI is optimized for high-density PCB layouts while maintaining reliable signal integrity and thermal performance.<br><br>The <strong>NT5CC64M16GP-DI</strong> is widely used in <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and computing platforms</strong> where high-speed volatile memory and low power operation are required.
NT5CC64M16GP-DI

Description: The NT5CC64M16GP-DI is a high-performance 1Gbit DDR3L synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CB128M16JR-FL / The <strong>NT5CB128M16JR-FL</strong> is a high-performance <strong>2Gbit DDR3 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, computing platforms, and high-speed memory applications requiring reliable bandwidth and stable operation.<br><br>The device is organized as <strong>128M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR) interface</strong>, allowing data transfer on both rising and falling edges of the clock for enhanced efficiency. <br><br>Operating at a nominal voltage of <strong>1.5V</strong>, the NT5CB128M16JR-FL supports data rates up to <strong>2133 Mbps</strong> with a clock frequency around <strong>1066 MHz</strong>, making it suitable for high-speed and bandwidth-intensive applications. <br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring data integrity and efficient power management in various system conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CB128M16JR-FL is optimized for high-density PCB layouts while maintaining reliable signal integrity and thermal performance. <br><br>The <strong>NT5CB128M16JR-FL</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, computing devices, and consumer electronics</strong> where high-speed volatile memory and stable performance are required.
NT5CB128M16JR-FL

Description: The NT5CB128M16JR-FL is a high-performance 2Gbit DDR3 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CC512M8EQ-EK / The <strong>NT5CC512M8EQ-EK</strong> is a high-performance <strong>4Gbit DDR3L synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, computing platforms, and high-speed memory applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>512M x 8 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel operations and improved data throughput. It utilizes a <strong>double data rate (DDR) interface</strong> with synchronous operation, allowing data transfer on both clock edges for increased efficiency.<br><br>Operating at a nominal voltage of <strong>1.35V</strong>, the NT5CC512M8EQ-EK supports data rates up to <strong>1866 Mbps</strong> with a clock frequency around <strong>933 MHz</strong>, making it suitable for high-speed and energy-efficient designs. Its low-voltage operation reduces power consumption compared to standard DDR3 memory.<br><br>The device supports key features such as <strong>programmable burst lengths, auto refresh, self-refresh, and power-down modes</strong>, ensuring data integrity and optimized power management in various operating conditions.<br><br>Packaged in a compact <strong>78-ball FBGA surface-mount form factor</strong>, the NT5CC512M8EQ-EK is optimized for high-density PCB layouts while maintaining reliable signal integrity and thermal performance.<br><br>The <strong>NT5CC512M8EQ-EK</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing devices</strong> where high-speed volatile memory and low power operation are essential.
NT5CC512M8EQ-EK

Description: The NT5CC512M8EQ-EK is a high-performance 4Gbit DDR3L synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT6DM16M32BC-T1 / The <strong>NT6DM16M32BC-T1</strong> is a high-speed <strong>512Mbit Mobile DDR SDRAM (LPDDR)</strong> developed by <strong>Nanya Technology</strong>, designed for low-power embedded systems, mobile devices, and portable electronics requiring efficient memory performance and reduced power consumption.<br><br>The device is organized as <strong>16M x 32 bits</strong> with an internal <strong>4-bank architecture</strong>, enabling concurrent operations and improved data throughput. It utilizes a <strong>double data rate (DDR) interface</strong> with a 2n prefetch architecture, allowing data transfer on both clock edges for higher bandwidth efficiency. <br><br>Operating at a nominal supply voltage of <strong>1.8V (VDD/VDDQ)</strong>, the NT6DM16M32BC-T1 supports data rates up to approximately <strong>400 Mbps</strong> and clock frequencies around <strong>200 MHz</strong>, making it suitable for high-speed, low-power applications. <br><br>The device incorporates advanced power-saving features such as <strong>deep power-down mode, partial array self-refresh (PASR), and temperature-compensated self-refresh (TCSR)</strong>, enabling optimized energy efficiency in battery-powered systems. It also supports programmable burst lengths and auto-precharge functionality for flexible memory access control. <br><br>Packaged in a compact <strong>90-ball VFBGA surface-mount form factor</strong>, the NT6DM16M32BC-T1 is optimized for space-constrained PCB layouts while maintaining reliable signal integrity and thermal performance.<br><br>The <strong>NT6DM16M32BC-T1</strong> is widely used in <strong>mobile devices, embedded systems, handheld electronics, industrial controllers, IoT devices, and communication equipment</strong> where low power consumption and high-speed volatile memory are required.
NT6DM16M32BC-T1

Description: The NT6DM16M32BC-T1 is a high-speed 512Mbit Mobile DDR SDRAM (LPD ...
Package: T&R | MOQ: 1900 | MPQ: 1900

NT5CC64M16DP-DI / The NT5CC64M16DP-DI is a high-performance <strong>1Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, communication equipment, and high-speed digital applications. It features a memory organization of <strong>64M × 16 bits</strong>, enabling efficient data handling and reliable bandwidth performance. <br><br>This device utilizes a <strong>DDR3 architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC64M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and stable memory access. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device offers a balance between power efficiency and performance, and is compatible with <strong>SSTL_15 signaling</strong> for reliable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, and self-refresh</strong> help maintain signal integrity and ensure stable operation in dynamic environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC64M16DP-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC64M16DP-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, and consumer electronics</strong>, where reliable and cost-effective high-speed volatile memory is required.
NT5CC64M16DP-DI

Description: The NT5CC64M16DP-DI is a high-performance 1Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16JR-DI / The NT5CC512M16JR-DI is a high-performance <strong>8Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high bandwidth and efficient data throughput. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to traditional SDRAM technologies. <br><br>The NT5CC512M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output while maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> ensure improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16JR-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC512M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, portable electronics, and consumer products</strong>, where low power consumption and high-capacity volatile memory are critical.
NT5CC512M16JR-DI

Description: The NT5CC512M16JR-DI is a high-performance 8Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16ER-DI / The NT5CC512M16ER-DI is a high-density <strong>8Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-performance memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM technologies. <br><br>The NT5CC512M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, minimizing power consumption and heat generation while also supporting <strong>1.5V compatibility</strong> for flexible system integration. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for performance-critical applications requiring fast and reliable memory access. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC512M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-capacity volatile memory are essential.
NT5CC512M16ER-DI

Description: The NT5CC512M16ER-DI is a high-density 8Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC512M16DP-DI / The NT5CC512M16DP-DI is a high-density <strong>8Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for high-performance computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high bandwidth and efficient data throughput for demanding applications. <br><br>This device utilizes a <strong>DDR3 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM technologies. <br><br>The NT5CC512M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access with low latency. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device provides a balance between power efficiency and performance, and is compatible with <strong>SSTL_15 signaling</strong> for stable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure reliable operation in high-speed systems. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC512M16DP-DI is ideal for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC512M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, consumer electronics, and high-performance digital systems</strong>, where high-capacity and reliable volatile memory is essential.
NT5CC512M16DP-DI

Description: The NT5CC512M16DP-DI is a high-density 8Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16JR-DI / The NT5CC256M16JR-DI is a high-performance <strong>4Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, supporting data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM solutions. <br><br>The NT5CC256M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output while maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16JR-DI is optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC256M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, portable electronics, and consumer devices</strong>, where low power consumption and high-capacity volatile memory are critical.
NT5CC256M16JR-DI

Description: The NT5CC256M16JR-DI is a high-performance 4Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16ER-DI / The NT5CC256M16ER-DI is a high-density <strong>4Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, engineered for low-power, high-speed memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data processing and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC256M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, minimizing power consumption and heat generation while also supporting <strong>1.5V compatibility</strong> for flexible system integration. <br><br>It supports high-speed operation up to approximately <strong>1600 Mbps</strong>, making it suitable for performance-critical applications requiring fast and reliable memory access. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC256M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-capacity volatile memory are essential.
NT5CC256M16ER-DI

Description: The NT5CC256M16ER-DI is a high-density 4Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC256M16DP-DI / The NT5CC256M16DP-DI is a high-density <strong>4Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for high-performance computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>256M × 16 bits</strong>, delivering high bandwidth and efficient data throughput. <br><br>This device utilizes <strong>DDR3 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal to significantly increase performance compared to traditional SDRAM technologies. <br><br>The NT5CC256M16DP-DI supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access and low latency performance. <br><br>Operating at a nominal supply voltage of <strong>1.5V</strong>, the device provides a balance between performance and power efficiency, and is compatible with <strong>SSTL_15 signaling</strong> for stable communication with modern memory controllers. <br><br>Advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong> enhance signal integrity and ensure reliable operation in high-speed systems. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16DP-DI is ideal for high-density PCB layouts and space-constrained electronic designs. <br><br>The <strong>NT5CC256M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, consumer electronics, and high-performance digital systems</strong>, where high-capacity and reliable volatile memory is required.
NT5CC256M16DP-DI

Description: The NT5CC256M16DP-DI is a high-density 4Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC128M16JR-DI / The NT5CC128M16JR-DI is a high-performance <strong>2Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient data processing and high bandwidth performance. <br><br>This device utilizes a <strong>DDR3L architecture</strong>, supporting data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. <br><br>The NT5CC128M16JR-DI operates at a nominal voltage of <strong>1.35V</strong>, reducing power consumption and thermal output, while also maintaining compatibility with <strong>1.5V operation</strong> in flexible system designs. <br><br>It supports high-speed operation typically up to <strong>1600 Mbps</strong>, making it suitable for applications requiring fast and reliable memory access. <br><br>Advanced features include <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture</strong>, ensuring improved signal integrity and stable operation in high-speed environments. <br><br>The device is housed in a compact <strong>96-ball FBGA surface-mount package</strong>, optimized for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC128M16JR-DI</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial controllers, portable electronics, and consumer products</strong>, where low power consumption and high-speed volatile memory are essential.
NT5CC128M16JR-DI

Description: The NT5CC128M16JR-DI is a high-performance 2Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC128M16ER-DI / The NT5CC128M16ER-DI is a high-efficiency <strong>2Gbit DDR3L SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for low-power, high-speed memory applications in embedded systems and advanced digital platforms. It features a memory organization of <strong>128M × 16 bits</strong>, delivering reliable data throughput and high bandwidth performance. <br><br>This device utilizes a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM solutions. <br><br>The NT5CC128M16ER-DI operates at a reduced supply voltage of approximately <strong>1.35V</strong>, offering improved power efficiency and reduced heat generation, making it ideal for energy-sensitive applications. It is also backward compatible with <strong>1.5V operation</strong> in many system designs. <br><br>Supporting high-speed operation up to approximately <strong>1600 Mbps</strong>, the device is suitable for performance-demanding applications requiring fast and stable memory access. <br><br>It incorporates advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and fly-by topology</strong>, enhancing signal integrity and ensuring reliable system performance. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC128M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. <br><br>The <strong>NT5CC128M16ER-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics</strong>, where low power consumption and high-speed volatile memory are critical requirements.
NT5CC128M16ER-DI

Description: The NT5CC128M16ER-DI is a high-efficiency 2Gbit DDR3L SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5CC128M16DP-DI / The NT5CC128M16DP-DI is a high-performance <strong>2Gbit DDR3 SDRAM</strong> developed by <strong>Nanya Technology</strong>, designed for high-speed computing, embedded systems, and data-intensive applications. It features a memory organization of <strong>128M × 16 bits</strong>, providing efficient data handling and high bandwidth performance. <br><br>This device operates with a <strong>double data rate (DDR3) architecture</strong>, enabling data transfers on both the rising and falling edges of the clock signal, significantly increasing throughput compared to standard SDRAM. <br><br>The NT5CC128M16DP-DI supports high-speed operation with clock frequencies typically up to <strong>1600 Mbps (DDR3-1600 class)</strong>, making it suitable for demanding applications requiring fast memory access and low latency. <br><br>It operates at a nominal supply voltage of <strong>1.5V</strong>, offering improved power efficiency compared to earlier generation memory technologies. The device is compatible with <strong>SSTL_15 signaling</strong>, ensuring stable communication with modern memory controllers and processors. <br><br>Advanced features include <strong>auto-refresh, self-refresh, on-die termination (ODT), and fly-by command/address architecture</strong>, which enhance signal integrity and overall system reliability. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount package</strong>, the NT5CC128M16DP-DI is ideal for high-density PCB layouts and space-constrained designs. <br><br>The <strong>NT5CC128M16DP-DI</strong> is widely used in applications such as <strong>embedded computing, networking equipment, industrial systems, consumer electronics, and high-performance digital platforms</strong>, where reliable and high-speed volatile memory is essential.
NT5CC128M16DP-DI

Description: The NT5CC128M16DP-DI is a high-performance 2Gbit DDR3 SDRAM developed by ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-75 / The MT48LC8M16A2P-75 is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication devices, and high-speed digital applications. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates using a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the system clock, ensuring precise timing and reliable performance in high-speed systems. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for performance-critical memory applications. <br><br>The MT48LC8M16A2P-75 includes a <strong>4-bank architecture with pipelined data access</strong>, allowing concurrent operations and improved throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, offering flexibility for various controller designs. <br><br>Operating at a supply voltage of approximately <strong>3.3V</strong>, the device is compatible with standard <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. <br><br>Additional features include <strong>auto-refresh, self-refresh, and data masking (DQM)</strong>, which help maintain data integrity and optimize memory performance in dynamic environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-75 is ideal for space-constrained PCB designs while delivering reliable electrical characteristics. <br><br>The <strong>MT48LC8M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and display systems</strong>, where cost-effective and high-speed volatile memory is required.
MT48LC8M16A2P-75

Description: The MT48LC8M16A2P-75 is a high-performance 128Mbit synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC64M16A2TG-75 / The MT48LC64M16A2TG-75 is a high-performance <strong>1Gbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications requiring reliable memory performance. It features a memory organization of <strong>4 banks × 16M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable system behavior. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed digital applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined data access</strong>, the MT48LC64M16A2TG-75 allows concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M16A2TG-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC64M16A2TG-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC64M16A2TG-75

Description: The MT48LC64M16A2TG-75 is a high-performance 1Gbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC64M16A2P-75 / The MT48LC64M16A2P-75 is a high-performance <strong>1Gbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications. It features a memory organization of <strong>4 banks × 16M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined data access</strong>, the MT48LC64M16A2P-75 allows concurrent memory operations and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity and reliable operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M16A2P-75 is optimized for space-constrained PCB designs while maintaining stable electrical performance. <br><br>The <strong>MT48LC64M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where reliable and cost-effective high-speed volatile memory is required.
MT48LC64M16A2P-75

Description: The MT48LC64M16A2P-75 is a high-performance 1Gbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC4M16A2P-75 / The MT48LC4M16A2P-75 is a reliable <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication devices. It features a memory organization of <strong>4 banks × 1M × 16 bits</strong>, enabling efficient parallel data processing and optimized memory bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable system performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for a wide range of digital applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined operation</strong>, the MT48LC4M16A2P-75 allows concurrent memory access and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M16A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC4M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC4M16A2P-75

Description: The MT48LC4M16A2P-75 is a reliable 64Mbit CMOS synchronous DRAM (SDRAM) d ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC32M16A2TG-75 / The MT48LC32M16A2TG-75 is a high-performance <strong>512Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>Built with an advanced <strong>quad-bank internal architecture and pipelined data access</strong>, the MT48LC32M16A2TG-75 allows concurrent memory operations and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh, self-refresh, and auto-precharge features</strong> to maintain data integrity and optimize performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M16A2TG-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC32M16A2TG-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC32M16A2TG-75

Description: The MT48LC32M16A2TG-75 is a high-performance 512Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC32M16A2P-75 / The MT48LC32M16A2P-75 is a high-performance <strong>512Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined data access</strong>, the MT48LC32M16A2P-75 allows concurrent memory operations and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M16A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC32M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC32M16A2P-75

Description: The MT48LC32M16A2P-75 is a high-performance 512Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC16M8A2P-75 / The MT48LC16M8A2P-75 is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication devices. It features a memory organization of <strong>4 banks × 4M × 8 bits</strong>, enabling efficient parallel data processing and optimized memory bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed digital applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined operation</strong>, the MT48LC16M8A2P-75 allows efficient burst data transfers and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M8A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC16M8A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC16M8A2P-75

Description: The MT48LC16M8A2P-75 is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC2M32B2P-75 / The MT48LC2M32B2P-75 is a high-performance <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication devices. It features a memory organization of <strong>4 banks × 512K × 32 bits</strong>, enabling efficient parallel data transfer and optimized memory bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all signals are registered on the rising edge of the system clock, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for a wide range of digital applications. <br><br>Built with an advanced <strong>quad-bank architecture and pipelined operation</strong>, the MT48LC2M32B2P-75 allows concurrent memory access and improves overall system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (1, 2, or 3 cycles)</strong>, providing flexibility for system designers. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh capabilities</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC2M32B2P-75 is optimized for high-density PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC2M32B2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, telecommunications devices, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC2M32B2P-75

Description: The MT48LC2M32B2P-75 is a high-performance 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2TG-75 / The MT48LC16M16A2TG-75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture and pipelined operation</strong>, the MT48LC16M16A2TG-75 allows efficient burst data transfers and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh, self-refresh, and auto precharge features</strong> to maintain data integrity and optimize performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2TG-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC16M16A2TG-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC16M16A2TG-75

Description: The MT48LC16M16A2TG-75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-75 / The MT48LC16M16A2P-75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture and burst-oriented data access</strong>, the MT48LC16M16A2P-75 allows efficient sequential data transfers and improved system throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>MT48LC16M16A2P-75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
MT48LC16M16A2P-75

Description: The MT48LC16M16A2P-75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H64M16HR-25E / The MT47H64M16HR-25E is a high-performance <strong>1Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications requiring reliable and efficient memory solutions. It features a memory organization of <strong>64M × 16 bits</strong>, enabling optimized parallel data processing and efficient bandwidth utilization. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase throughput compared to conventional SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H64M16HR-25E enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H64M16HR-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H64M16HR-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable, high-speed, and cost-effective volatile memory is required.
MT47H64M16HR-25E

Description: The MT47H64M16HR-25E is a high-performance 1Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H512M8HQ-25E / The MT47H512M8HQ-25E is a high-performance <strong>4Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-speed memory. It features a memory organization of <strong>512M × 8 bits</strong>, enabling efficient parallel data processing and optimized bandwidth performance. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase throughput compared to standard SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H512M8HQ-25E enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>60-ball FBGA surface-mount form factor</strong>, the MT47H512M8HQ-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H512M8HQ-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable, high-speed, and cost-effective volatile memory is required.
MT47H512M8HQ-25E

Description: The MT47H512M8HQ-25E is a high-performance 4Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H512M16RT-25E / The MT47H512M16RT-25E is a high-density <strong>8Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-capacity memory solutions. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient parallel data processing and large-scale data storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable and efficient performance in high-speed applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H512M16RT-25E enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, offering a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H512M16RT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H512M16RT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications infrastructure, and high-performance consumer electronics</strong>, where stable, high-speed, and high-capacity volatile memory is required.
MT47H512M16RT-25E

Description: The MT47H512M16RT-25E is a high-density 8Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H512M16JT-25E / The MT47H512M16JT-25E is a high-density <strong>8Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-capacity memory. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient parallel data processing and large data storage capacity. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in high-speed applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H512M16JT-25E enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H512M16JT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H512M16JT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications infrastructure, and high-performance consumer electronics</strong>, where stable and cost-effective high-capacity volatile memory is required.
MT47H512M16JT-25E

Description: The MT47H512M16JT-25E is a high-density 8Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H256M8HQ-25E / The MT47H256M8HQ-25E is a high-performance <strong>2Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and networking equipment requiring reliable high-speed memory. It features a memory organization of <strong>256M × 8 bits</strong>, enabling efficient parallel data processing and optimized bandwidth. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase throughput. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H256M8HQ-25E enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power consumption, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>60-ball FBGA surface-mount form factor</strong>, the MT47H256M8HQ-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H256M8HQ-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H256M8HQ-25E

Description: The MT47H256M8HQ-25E is a high-performance 2Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H256M16RT-25E / The MT47H256M16RT-25E is a high-performance <strong>4Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and networking equipment requiring reliable high-speed memory solutions. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth and overall system performance. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, making it suitable for demanding digital applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H256M16RT-25E enables concurrent memory operations and improved throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H256M16RT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H256M16RT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H256M16RT-25E

Description: The MT47H256M16RT-25E is a high-performance 4Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H256M16JT-25E / The MT47H256M16JT-25E is a high-performance <strong>4Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-speed memory. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth compared to standard SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in demanding applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H256M16JT-25E enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H256M16JT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H256M16JT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, telecommunications equipment, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H256M16JT-25E

Description: The MT47H256M16JT-25E is a high-performance 4Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H128M8HQ-25E / The MT47H128M8HQ-25E is a reliable <strong>1Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and networking equipment requiring stable and cost-effective memory solutions. It features a memory organization of <strong>128M × 8 bits</strong>, enabling efficient parallel data handling and optimized bandwidth. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly improve throughput compared to standard SDRAM. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H128M8HQ-25E enables concurrent memory operations and improved system performance. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, ensuring a balance between performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>60-ball FBGA surface-mount form factor</strong>, the MT47H128M8HQ-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H128M8HQ-25E</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking devices, telecommunications equipment, and consumer electronics</strong>, where stable, high-speed, and cost-effective volatile memory is required.
MT47H128M8HQ-25E

Description: The MT47H128M8HQ-25E is a reliable 1Gbit DDR2 synchronous DRAM (SDRAM) de ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H128M16RT-25E / The MT47H128M16RT-25E is a high-performance <strong>2Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and networking applications requiring reliable high-speed memory. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture with 4n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in high-speed applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H128M16RT-25E enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates at a supply voltage range of <strong>1.7V to 1.9V (typ. 1.8V)</strong>, balancing performance and power efficiency, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H128M16RT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT47H128M16RT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications systems, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H128M16RT-25E

Description: The MT47H128M16RT-25E is a high-performance 2Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT47H128M16JT-25E / The MT47H128M16JT-25E is a high-performance <strong>2Gbit DDR2 synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-speed memory. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR2) architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>400 MHz (800 MT/s data rate)</strong>, ensuring stable performance in mid- to high-speed systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT47H128M16JT-25E enables concurrent operations and improved memory throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates at a typical supply voltage of <strong>1.8V</strong>, ensuring a balance between performance and power consumption, and is fully compliant with standard <strong>DDR2 memory interfaces</strong>. <br><br>Packaged in a compact <strong>84-ball FBGA surface-mount form factor</strong>, the MT47H128M16JT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT47H128M16JT-25E</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, telecommunications equipment, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
MT47H128M16JT-25E

Description: The MT47H128M16JT-25E is a high-performance 2Gbit DDR2 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K64M16JT-125 / The MT41K64M16JT-125 is a high-performance <strong>1Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>64M × 16 bits</strong>, enabling efficient parallel data processing and compact memory integration. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, allowing data transfer on both rising and falling edges of the clock signal for significantly increased bandwidth. It supports clock frequencies up to approximately <strong>800 MHz (1600 MT/s)</strong>, ensuring high-speed operation in demanding applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K64M16JT-125 enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong>, reducing power consumption while maintaining high performance, and remains compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K64M16JT-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K64M16JT-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and consumer electronics</strong>, where high-speed, low-power, and reliable volatile memory is required.
MT41K64M16JT-125

Description: The MT41K64M16JT-125 is a high-performance 1Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K512M16TW-107 / The MT41K512M16TW-107 is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity data storage and efficient parallel processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>933 MHz (1866 MT/s)</strong>, making it suitable for high-speed computing and communication systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K512M16TW-107 enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K512M16TW-107 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K512M16TW-107</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K512M16TW-107

Description: The MT41K512M16TW-107 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K512M16HA-125 / The MT41K512M16HA-125 is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity storage and efficient parallel data processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, allowing data transfer on both rising and falling edges of the clock signal for significantly increased bandwidth. It supports data rates up to approximately <strong>1600 MT/s (800 MHz clock)</strong>, ensuring reliable high-speed performance. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K512M16HA-125 enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and remains compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K512M16HA-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K512M16HA-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K512M16HA-125

Description: The MT41K512M16HA-125 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K256M16TW-107 IT:P / The MT41K256M16TW-107 is a high-performance <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for high-speed embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, providing high-density storage and efficient parallel data processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, enabling data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately <strong>933 MHz (1866 MT/s data rate)</strong>, making it suitable for demanding high-performance applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K256M16TW-107 allows concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is backward compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K256M16TW-107 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K256M16TW-107</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K256M16TW-107 IT:P

Description: The MT41K256M16TW-107 is a high-performance 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K256M16LY-107 / The MT41K256M16LY-107 is a high-performance <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for high-speed embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, providing high-density storage with efficient parallel data processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, enabling data transfers on both rising and falling edges of the clock signal for significantly increased bandwidth. It supports clock frequencies up to approximately <strong>933 MHz (1866 MT/s)</strong>, making it suitable for high-performance memory applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K256M16LY-107 allows concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern system designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is backward compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K256M16LY-107 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K256M16LY-107</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K256M16LY-107

Description: The MT41K256M16LY-107 is a high-performance 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K256M16HA-125 / The MT41K256M16HA-125 is a high-performance <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications requiring high-speed and reliable memory solutions. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock speeds up to <strong>800 MHz (1600 MT/s data rate)</strong>, ensuring high-speed operation in demanding applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K256M16HA-125 enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is backward compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K256M16HA-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K256M16HA-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K256M16HA-125

Description: The MT41K256M16HA-125 is a high-performance 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K1G16HA-125 / The MT41K1G16HA-125 is a high-density <strong>16Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for high-performance embedded systems, networking equipment, and advanced computing applications. It features a memory organization of <strong>1G × 16 bits</strong>, enabling large-capacity data storage and efficient parallel processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to conventional SDRAM. It supports clock frequencies up to approximately <strong>800 MHz (1600 MT/s)</strong>, ensuring high-speed operation in demanding systems. <br><br>Built with an advanced <strong>8-bank internal architecture and dual-rank (TwinDie) configuration</strong>, the MT41K1G16HA-125 enables concurrent operations and improved memory throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and remains compatible with <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K1G16HA-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K1G16HA-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking infrastructure, data processing systems, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K1G16HA-125

Description: The MT41K1G16HA-125 is a high-density 16Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K128M16LY-125 / The MT41K128M16LY-125 is a high-performance <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and high-speed digital platforms. It features a memory organization of <strong>128M × 16 bits</strong>, providing efficient parallel data processing and reliable high-density storage. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, enabling data transfer on both rising and falling edges of the clock signal for increased bandwidth. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, ensuring fast and efficient memory performance. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K128M16LY-125 enables concurrent memory operations and improved system throughput. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is backward compatible with <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K128M16LY-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K128M16LY-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, automotive electronics, and consumer devices</strong>, where high-speed, low-power, and high-reliability volatile memory is required.
MT41K128M16LY-125

Description: The MT41K128M16LY-125 is a high-performance 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K128M16JT-125 IT:K TR / The MT41K128M16JT-125 is a high-performance <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>128M × 16 bits</strong>, providing efficient parallel data processing and high-density storage. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture with 8n prefetch</strong>, enabling data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock speeds up to <strong>800 MHz (1600 MT/s data rate)</strong>, ensuring high-speed performance in demanding applications. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the MT41K128M16JT-125 allows concurrent operations and improved memory throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (typ. 1.35V)</strong>, reducing power consumption while maintaining high performance, and is backward compatible with standard <strong>1.5V DDR3 systems</strong>. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K128M16JT-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>MT41K128M16JT-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, automotive electronics, and consumer electronics</strong>, where high-speed, low-power, and reliable volatile memory is required.
MT41K128M16JT-125 IT:K TR

Description: The MT41K128M16JT-125 is a high-performance 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

MT41K128M16HA-125 / The MT41K128M16HA-125 is a high-performance <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient parallel data processing and high-density storage. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth compared to conventional SDRAM technologies. It supports clock frequencies up to approximately <strong>800 MHz (1600 MT/s)</strong>, ensuring high-speed performance. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the MT41K128M16HA-125 enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V</strong>, reducing power consumption while maintaining high performance, and is compatible with standard DDR3 interfaces. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the MT41K128M16HA-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>MT41K128M16HA-125</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
MT41K128M16HA-125

Description: The MT41K128M16HA-125 is a high-performance 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

K4S641632K-UC75 / The K4S641632K-UC75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>With its <strong>4-bank internal architecture and pipelined data access</strong>, the K4S641632K-UC75 allows concurrent memory operations, improving throughput and overall system efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, offering flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S641632K-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S641632K-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S641632K-UC75

Description: The K4S641632K-UC75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S641632J-UC75 / The K4S641632J-UC75 is a reliable <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and general-purpose high-speed memory applications. It features a memory organization of <strong>4 banks × 1M × 16 bits</strong>, enabling efficient parallel data processing and optimized bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Built with a <strong>4-bank internal architecture and pipelined data access</strong>, the K4S641632J-UC75 allows concurrent memory operations, improving throughput and system efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, offering flexibility for various memory controller designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S641632J-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S641632J-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, and consumer electronics</strong>, where stable and cost-effective volatile memory solutions are required.
K4S641632J-UC75

Description: The K4S641632J-UC75 is a reliable 64Mbit CMOS synchronous DRAM (SDRAM) de ...
Package: TRAY | MOQ: 960 | MPQ: 960













info@signalhk.com

+852 2417 2366

Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong.


SIGNAL-HK WIKI BLOG

Copyright © 2008-2024 Signal HK Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Signal HK Limited Terms of Use and Privacy Policy

Cookie Policy | MSN EQV Parts |