NT5AD256M16E4-JR
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| Part Number | NT5AD256M16E4-JR |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5AD256M16E4-JR is a high-performance 4Gbit DDR4 synchronous DRAM developed by Nanya Technology, designed for embedded systems, industrial computing, and high-speed memory applications requiring efficient bandwidth and low power consumption. The device is organized as 256M x 16 bits and features an advanced multi-bank architecture, enabling parallel memory operations and improved data throughput. It utilizes a double data rate (DDR4) interface, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. Operating at a nominal voltage of 1.2V, the NT5AD256M16E4-JR supports data rates up to 3200 Mbps, making it suitable for high-speed and energy-efficient system designs. Its architecture is optimized for stable performance and reduced power consumption compared to previous DDR generations. The device supports key features such as programmable burst lengths, auto-refresh, self-refresh, and power-down modes, ensuring reliable data integrity and optimized power management across various operating conditions. Packaged in a compact 96-ball FBGA surface-mount form factor, the NT5AD256M16E4-JR is optimized for high-density PCB layouts while maintaining excellent signal integrity and thermal performance. The NT5AD256M16E4-JR is widely used in industrial controllers, networking equipment, embedded systems, computing platforms, and consumer electronics where high-speed volatile memory and reliable operation are required. |
| Product Group | SDRAM |
| MOQ | 2000 pcs |
| SPQ | 2000 pcs |
| Figure/Case | FBGA-96 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NT5AD256M16E4-JR
NT5AD256M16E4-JR