All Products SDRAM

NT5AD512M16H4-JR / The NT5AD512M16H4-JR is a high-performance <strong>8Gb DDR4 SDRAM memory device</strong> from <strong>Nanya Technology</strong>, designed to deliver reliable, high-speed memory performance for computing, networking, telecommunications, industrial, and embedded applications. Utilizing advanced DDR4 technology, the device provides increased bandwidth, improved signal integrity, and enhanced power efficiency for modern digital systems. <br><br> Organized as <strong>512M x 16</strong>, the NT5AD512M16H4-JR offers a total memory density of <strong>8Gb</strong> and supports data transfer rates up to <strong>3200Mbps</strong>. Its high-speed architecture enables efficient processing of memory-intensive applications while improving overall system responsiveness and throughput. <br><br> Operating from a low <strong>1.2V supply voltage</strong>, the device significantly reduces power consumption compared to earlier memory generations. This low-voltage operation helps minimize heat generation and supports energy-efficient system designs in both embedded and enterprise applications. <br><br> The DDR4 architecture incorporates advanced features such as <strong>bank group architecture, 8n prefetch operation, on-die termination (ODT), CRC error detection, ZQ calibration, and data bus inversion (DBI)</strong>. These technologies improve signal quality, enhance reliability, and support stable operation at high data rates. <br><br> Designed for high-speed synchronous operation, the NT5AD512M16H4-JR transfers data on both rising and falling clock edges, maximizing memory bandwidth while maintaining precise timing control. The architecture is optimized to support demanding workloads in networking, storage, and computing platforms. <br><br> Packaged in a compact <strong>96-ball FBGA package</strong>, the device enables high-density PCB layouts while providing excellent electrical and thermal performance. The package design supports automated assembly and integration into space-constrained electronic products. <br><br> Built for dependable long-term operation, the memory device incorporates advanced refresh management, timing control, and signal optimization mechanisms to ensure stable performance under continuous operation and demanding environmental conditions. <br><br> The <strong>NT5AD512M16H4-JR</strong> is widely used in <strong>servers, networking equipment, telecommunications infrastructure, industrial computers, embedded systems, storage controllers, edge computing devices, communication platforms, DDR4 memory modules, consumer electronics, and high-performance digital applications</strong> requiring fast, reliable, and energy-efficient memory performance.
NT5AD512M16H4-JR

Description: The NT5AD512M16H4-JR is a high-performance 8Gb DDR4 SDRAM memory device f ...
Package: T&R | MOQ: 2000 | MPQ: 2000

H5AG46DXNDX117N / The H5AG46DXNDX117N is a high-performance <strong>DDR4 SDRAM memory device</strong> from <strong>SK hynix</strong>, engineered to provide reliable high-speed memory performance for computing, industrial, networking, telecommunications, and embedded system applications. Utilizing advanced DDR4 architecture, the device delivers improved bandwidth, lower power consumption, and enhanced system efficiency compared to previous memory generations. <br><br> This memory IC provides a total density of <strong>4Gb</strong> and is optimized for applications requiring stable, high-speed data storage and retrieval. Its advanced memory architecture supports rapid data transfers, helping improve overall system responsiveness and processing efficiency. <br><br> Operating from a nominal supply voltage of <strong>1.2V</strong>, the H5AG46DXNDX117N reduces power consumption while maintaining excellent performance. The low-voltage design contributes to lower thermal output and improved energy efficiency, making it suitable for high-density electronic systems. <br><br> The DDR4 architecture incorporates advanced features such as <strong>bank group architecture, on-die termination, CRC error detection, ZQ calibration, and enhanced signal integrity mechanisms</strong>. These technologies help ensure reliable operation at high data rates while improving memory subsystem stability. <br><br> Designed for high-speed operation, the device supports double data rate transfers, enabling data transmission on both rising and falling clock edges. This architecture maximizes memory bandwidth while maintaining efficient power utilization and dependable timing performance. <br><br> Packaged in a compact <strong>FBGA package</strong>, the H5AG46DXNDX117N enables space-efficient PCB layouts while providing excellent electrical and thermal characteristics. The package is optimized for automated assembly processes and modern electronic manufacturing requirements. <br><br> Built for long-term reliability, the device incorporates advanced refresh management, timing control, and signal optimization technologies. These features help maintain stable operation in continuously operating systems and demanding computing environments. <br><br> The <strong>H5AG46DXNDX117N</strong> is widely used in <strong>embedded computing platforms, networking equipment, industrial controllers, telecommunications infrastructure, consumer electronics, storage systems, communication devices, IoT gateways, DDR4 memory modules, and high-performance digital applications</strong> requiring dependable and efficient memory performance.
H5AG46DXNDX117N

Description: The H5AG46DXNDX117N is a high-performance DDR4 SDRAM memory device from ...
Package: T&R | MOQ: 2000 | MPQ: 2000

K4A8G165WC-BCTD / The K4A8G165WC-BCTD is a high-performance <strong>8Gb DDR4 SDRAM memory device</strong> from <strong>Samsung Semiconductor</strong>, designed to deliver reliable, high-bandwidth memory performance for embedded computing, networking, industrial systems, telecommunications equipment, and server applications. Built using advanced DDR4 technology, the device provides an optimal balance of speed, capacity, and power efficiency. <br><br> Organized as <strong>512M x 16</strong>, the K4A8G165WC-BCTD offers a total memory density of <strong>8Gb</strong> and supports data transfer rates up to <strong>2666Mbps</strong>. Its high-speed architecture enables rapid data access and efficient processing of memory-intensive workloads. <br><br> Operating from a nominal supply voltage of <strong>1.2V</strong>, the device reduces power consumption and thermal generation compared to earlier memory technologies. This low-voltage operation helps improve overall system efficiency while supporting high-density memory designs. <br><br> The DDR4 architecture incorporates advanced features such as <strong>bank group architecture, dynamic on-die termination, CRC error detection, ZQ calibration, data mask functionality, and auto precharge operation</strong>. These capabilities improve signal integrity, enhance reliability, and support stable operation at high data rates. <br><br> The K4A8G165WC-BCTD utilizes Samsungs advanced <strong>C-die DDR4 technology</strong> and supports fully synchronous operation with data transfers occurring on both clock edges. This architecture maximizes memory bandwidth while maintaining efficient power utilization and stable timing performance. <br><br> Packaged in a compact <strong>96-ball FBGA package</strong>, the device enables high-density PCB layouts while providing excellent electrical and thermal characteristics. Its surface-mount package supports automated manufacturing processes and integration into space-constrained electronic systems. <br><br> Designed for long-term reliability, the memory device operates across a commercial temperature range and incorporates advanced DDR4 timing control and refresh management functions. These features help ensure dependable performance in continuously operating applications. <br><br> The <strong>K4A8G165WC-BCTD</strong> is widely used in <strong>servers, networking equipment, telecommunications infrastructure, industrial computers, embedded systems, storage controllers, edge computing devices, enterprise hardware, communication platforms, DDR4 memory modules, and high-performance digital applications</strong> requiring fast and reliable memory performance.
K4A8G165WC-BCTD

Description: The K4A8G165WC-BCTD is a high-performance 8Gb DDR4 SDRAM memory device fr ...
Package: T&R | MOQ: 2000 | MPQ: 2000

MT40A1G16TB-062E:F / The MT40A1G16TB-062E:F is a high-density <strong>16Gb DDR4 SDRAM memory device</strong> from <strong>Micron Technology</strong>, engineered to deliver reliable high-speed memory performance for enterprise, industrial, networking, telecommunications, and embedded computing applications. Built on advanced DDR4 architecture, the device offers increased memory capacity, enhanced bandwidth, and improved power efficiency for modern digital systems. <br><br> Organized as <strong>1G x 16</strong>, the MT40A1G16TB-062E:F provides a total memory density of <strong>16Gb</strong> and supports data transfer rates up to <strong>3200MT/s</strong>. The high memory density allows designers to build larger-capacity memory subsystems while reducing component count and PCB complexity. <br><br> Operating from a low <strong>1.2V supply voltage</strong>, the device significantly reduces power consumption compared to earlier memory generations. This lower operating voltage helps improve overall system efficiency while minimizing heat generation in high-density computing environments. <br><br> The DDR4 architecture incorporates advanced features such as <strong>8n prefetch operation, bank group architecture, improved command scheduling, enhanced signal integrity, and higher memory bandwidth</strong>. These technologies contribute to improved system performance and more efficient data processing. <br><br> The MT40A1G16TB-062E:F supports operating frequencies up to <strong>1600MHz</strong> and transfers data on both rising and falling clock edges, maximizing throughput while maintaining stable and reliable operation. Its architecture is optimized for applications requiring fast memory access and continuous data processing. <br><br> Packaged in a compact <strong>96-ball TFBGA package</strong>, the device enables high-density board layouts while providing excellent electrical performance and thermal characteristics. The package design supports automated manufacturing processes and efficient integration into advanced electronic systems. <br><br> Designed for long-term reliability, the memory device incorporates advanced DDR4 error management and timing control mechanisms, helping maintain stable operation under demanding workloads and extended operating periods. <br><br> The <strong>MT40A1G16TB-062E:F</strong> is widely used in <strong>servers, networking equipment, telecommunications infrastructure, industrial computers, embedded processing systems, storage controllers, edge computing devices, enterprise hardware, data center platforms, artificial intelligence systems, and high-performance digital applications</strong> requiring high-capacity, high-speed memory performance.
MT40A1G16TB-062E:F

Description: The MT40A1G16TB-062E:F is a high-density 16Gb DDR4 SDRAM memory device fr ...
Package: T&R | MOQ: 2000 | MPQ: 2000

MT40A512M16TB-062E:R / The MT40A512M16TB-062E:R is a high-performance <strong>8Gb DDR4 SDRAM memory device</strong> from <strong>Micron Technology</strong>, designed to provide fast and reliable memory performance for computing, networking, industrial, telecommunications, and embedded applications. Built on advanced DDR4 technology, the device delivers high bandwidth, low power consumption, and excellent signal integrity for demanding digital systems. <br><br> Organized as <strong>512M x 16</strong>, the MT40A512M16TB-062E:R provides a total memory density of <strong>8Gb</strong> and supports data transfer rates up to <strong>3200MT/s</strong>. This high-speed operation enables efficient handling of large data workloads while improving overall system responsiveness and performance. <br><br> Operating from a low <strong>1.2V supply voltage</strong>, the device helps reduce system power consumption and thermal generation compared to previous DDR memory generations. Its energy-efficient architecture makes it suitable for high-density memory designs and power-sensitive applications. <br><br> The DDR4 architecture incorporates advanced features including <strong>8n-prefetch architecture, bank grouping, improved command scheduling, enhanced reliability, and increased memory bandwidth</strong>. These capabilities allow the memory to efficiently support modern processors, networking devices, and embedded computing platforms. <br><br> The MT40A512M16TB-062E:R operates at a clock frequency of up to <strong>1600MHz</strong> and supports <strong>CL22 latency</strong>, providing excellent performance for high-speed memory subsystems. The device transfers data on both clock edges, maximizing throughput while maintaining stable operation. <br><br> Packaged in a compact <strong>96-ball TFBGA package</strong>, the memory device enables high-density PCB layouts while providing excellent electrical and thermal performance. Its surface-mount design supports automated assembly and integration into modern electronic products. <br><br> Designed for reliability and long-term operation, the MT40A512M16TB-062E:R supports commercial operating temperatures from <strong>0°C to +95°C</strong> and is optimized for use in systems requiring stable high-speed memory performance. <br><br> The <strong>MT40A512M16TB-062E:R</strong> is widely used in <strong>servers, networking equipment, industrial computers, telecommunications systems, embedded computing platforms, storage controllers, edge computing devices, enterprise hardware, high-performance digital systems, and DDR4 memory modules</strong> where fast and dependable memory operation is essential.
MT40A512M16TB-062E:R

Description: The MT40A512M16TB-062E:R is a high-performance 8Gb DDR4 SDRAM memory device ...
Package: T&R | MOQ: 2000 | MPQ: 2000

IS62WV12816BLL-55TLI / The IS62WV12816BLL-55TLI is a high-performance <strong>2Mbit asynchronous static RAM (SRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for fast and low-power memory applications in embedded and industrial systems. It features a memory organization of <strong>128K words × 16 bits</strong>, enabling efficient parallel data access. <br><br> This device operates with a <strong>parallel interface</strong> and provides an access time of <strong>55 ns</strong>, ensuring quick read and write operations for high-speed processing environments. <br><br> The IS62WV12816BLL-55TLI is optimized for low-power operation, supporting a <strong>supply voltage range of 2.5V to 3.6V (typ. 3.3V)</strong>, making it suitable for modern low-voltage designs and battery-powered systems. <br><br> Built using advanced CMOS technology, the device offers <strong>ultra-low standby current and stable performance</strong>, ensuring reliable operation across a wide temperature range of <strong>-40°C to +85°C</strong>. <br><br> The memory is designed as a <strong>volatile storage solution</strong>, meaning data is retained only while power is supplied, making it ideal for applications requiring fast temporary data storage and buffering. <br><br> Packaged in a compact <strong>44-pin TSOP-II surface-mount package</strong>, the IS62WV12816BLL-55TLI is well-suited for high-density PCB layouts and automated manufacturing processes. <br><br> The <strong>IS62WV12816BLL-55TLI</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, networking devices, and data buffering applications</strong>, where fast access time and low power consumption are critical.
IS62WV12816BLL-55TLI

Description: The IS62WV12816BLL-55TLI is a high-performance 2Mbit asynchronous static RAM (SRAM ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT40A1G16RC-062E:B / The MT40A1G16RC-062E:B is a high-density <strong>16Gb DDR4 SDRAM</strong> developed by <strong>Micron Technology</strong>, designed for high-performance computing, networking, and embedded applications requiring fast and reliable volatile memory. It features a memory organization of <strong>1G × 16 bits</strong>, providing efficient parallel data transfer and high bandwidth performance. <br><br>The device operates using an advanced <strong>DDR4 architecture</strong>, enabling data transfer on both rising and falling edges of the clock signal. It supports data rates up to approximately <strong>3200 MT/s</strong> with a clock frequency around <strong>1.6 GHz</strong>, ensuring high-speed operation for demanding systems. <br><br>Internally, the memory utilizes a <strong>multi-bank structure with bank group architecture and 8n prefetch</strong>, allowing parallel operations and improved memory efficiency. It supports <strong>programmable burst modes, CAS latency options, and advanced timing controls</strong>, providing flexibility for system-level optimization. <br><br>The MT40A1G16RC-062E:B operates at a low <strong>1.2V supply voltage (typical)</strong>, improving power efficiency compared to previous memory generations. It also includes features such as <strong>auto-refresh, self-refresh, on-die termination (ODT), and internal Vref generation</strong> to ensure stable operation and signal integrity. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the device is optimized for high-density PCB layouts while maintaining strong electrical and thermal performance. <br><br>The <strong>MT40A1G16RC-062E:B</strong> is widely used in <strong>industrial computing, networking equipment, embedded systems, servers, and high-performance digital applications</strong>, where high-speed and high-capacity DDR4 memory is essential.
MT40A1G16RC-062E:B

Description: The MT40A1G16RC-062E:B is a high-density 16Gb DDR4 SDRAM developed by ...
Package: T&R | MOQ: 1000 | MPQ: 1000

H5TQ4G63AFR-PBC / The H5TQ4G63AFR-PBC is a high-performance <strong>4Gb DDR3 SDRAM</strong> developed by <strong>SK Hynix</strong>, designed for applications requiring high memory density and fast data throughput such as embedded systems, computing platforms, and networking equipment. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient parallel data handling and optimized bandwidth performance. <br><br>The device operates using a <strong>DDR3 architecture</strong>, transferring data on both the rising and falling edges of the clock signal to achieve high-speed operation. It supports data rates up to approximately <strong>1600 MT/s</strong> depending on the speed grade, making it suitable for high-bandwidth memory applications. <br><br>Internally, the H5TQ4G63AFR-PBC utilizes a <strong>multi-bank structure with 8-bit prefetch and pipelined data paths</strong>, allowing concurrent operations and improved memory efficiency. It supports <strong>programmable burst lengths (BL4/BL8), CAS latency options, and additive latency</strong>, offering flexibility for various system designs. <br><br>The device operates at a nominal <strong>1.5V supply voltage</strong> and includes features such as <strong>on-chip DLL, differential clock inputs, auto-refresh, and self-refresh modes</strong>, ensuring reliable timing and data integrity across operating conditions. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the H5TQ4G63AFR-PBC is optimized for high-density PCB layouts while maintaining strong electrical and thermal performance. <br><br>The <strong>H5TQ4G63AFR-PBC</strong> is widely used in <strong>embedded computing, industrial systems, networking equipment, consumer electronics, and high-performance memory subsystems</strong>, where reliable and high-speed DDR3 memory is required.
H5TQ4G63AFR-PBC

Description: The H5TQ4G63AFR-PBC is a high-performance 4Gb DDR3 SDRAM developed by ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT40A256M16GE-083E:B TR / The MT40A256M16GE-083E:B TR is a high-efficiency <strong>4Gb DDR4 SDRAM</strong> manufactured by <strong>Micron Technology</strong>, designed for modern embedded systems, industrial computing, and high-speed digital applications. It features a memory organization of <strong>256M × 16 bits</strong>, delivering a balanced combination of density and performance for demanding memory requirements. <br><br>This device utilizes a <strong>DDR4 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal for improved bandwidth and system efficiency. With support for data rates up to approximately <strong>2400 MT/s</strong>, it provides reliable high-speed performance for a wide range of applications. <br><br>The MT40A256M16GE-083E:B TR incorporates a <strong>multi-bank and bank group architecture</strong>, allowing parallel internal operations and enhanced memory access efficiency. It supports features such as <strong>burst length 8 (BL8), programmable CAS latency, and on-die termination (ODT)</strong>, ensuring flexibility and signal integrity in complex system designs. <br><br>Operating at a low <strong>1.2V supply voltage</strong>, the device offers improved power efficiency compared to earlier SDRAM technologies. It also supports <strong>POD (Pseudo Open Drain) I/O interface</strong>, which enhances signal quality and reduces power consumption. <br><br>Encased in a compact <strong>96-ball FBGA surface-mount package</strong>, the MT40A256M16GE-083E:B TR is well-suited for high-density PCB layouts while maintaining strong electrical reliability. <br><br>The <strong>MT40A256M16GE-083E:B TR</strong> is widely used in <strong>industrial systems, networking equipment, embedded platforms, automotive electronics, and high-performance computing applications</strong>, where fast, reliable, and energy-efficient DDR4 memory is required.
MT40A256M16GE-083E:B TR

Description: The MT40A256M16GE-083E:B TR is a high-efficiency 4Gb DDR4 SDRAM manufactu ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT40A512M16TD-062E:R / The MT40A512M16TD-062E:R is a high-performance <strong>8Gb DDR4 SDRAM</strong> developed by <strong>Micron Technology</strong>, designed for advanced computing, embedded systems, and high-speed data processing applications. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high density and efficient data throughput for modern system requirements. <br><br>This device operates using a <strong>double data rate (DDR4) architecture</strong>, transferring data on both the rising and falling edges of the clock signal, which significantly improves bandwidth and overall system efficiency. With a data rate of up to <strong>3200 MT/s (0.625ns clock cycle)</strong>, it is well-suited for high-speed memory applications. <br><br>The MT40A512M16TD-062E:R incorporates a <strong>bank group architecture with multiple internal banks</strong>, enabling parallel operations and improved memory access efficiency. It supports advanced features such as <strong>burst length 8 (BL8), on-die termination (ODT), and programmable CAS latency</strong>, allowing optimized performance across various system designs. <br><br>Operating at a low <strong>1.2V supply voltage</strong>, the device offers improved power efficiency compared to previous generation SDRAM technologies. It is compatible with modern memory controllers and supports <strong>POD (Pseudo Open Drain) I/O interface</strong> for enhanced signal integrity. <br><br>The memory is packaged in a compact <strong>96-ball FBGA surface-mount package</strong>, making it suitable for high-density PCB layouts while ensuring reliable electrical performance. <br><br>The <strong>MT40A512M16TD-062E:R</strong> is widely used in <strong>high-performance embedded systems, networking equipment, industrial computing, automotive electronics, and data-intensive applications</strong>, where fast, reliable, and energy-efficient DDR4 memory is essential.
MT40A512M16TD-062E:R

Description: The MT40A512M16TD-062E:R is a high-performance 8Gb DDR4 SDRAM developed b ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-75:G / The MT48LC8M16A2P-75:G is a dependable <strong>128Mbit synchronous DRAM (SDRAM)</strong> manufactured by <strong>Micron Technology</strong>, designed for embedded, industrial, and communication systems that require stable and efficient high-speed memory. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling fast parallel data access and optimized bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring accurate timing and reliable operation. With a <strong>-75 speed grade</strong>, it supports clock frequencies up to approximately <strong>133 MHz</strong>, making it suitable for a wide range of applications. <br><br>Its internal design includes a <strong>four-bank architecture with pipelined data paths</strong>, allowing concurrent operations that enhance memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, offering flexibility for different system requirements. <br><br>The MT48LC8M16A2P-75:G operates at a <strong>3.3V supply voltage</strong> and is compatible with standard <strong>LVTTL logic levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA platforms. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity during operation. <br><br>Encased in a compact <strong>54-pin TSOP-II surface-mount package</strong>, the device is optimized for space-constrained PCB designs while maintaining robust electrical performance. <br><br>The <strong>MT48LC8M16A2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display applications</strong>, where reliable and cost-effective SDRAM solutions are required.
MT48LC8M16A2P-75:G

Description: The MT48LC8M16A2P-75:G is a dependable 128Mbit synchronous DRAM (SDRAM) m ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A-IT-L / The MT48LC8M16A2P-6A-IT-L is a high-speed <strong>128Mbit synchronous DRAM (SDRAM)</strong> from <strong>Micron Technology</strong>, engineered for demanding embedded and industrial applications requiring fast and reliable volatile memory. It is organized as <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth performance. <br><br>The device features a <strong>fully synchronous interface</strong>, where all inputs and outputs are aligned with the system clock, ensuring consistent timing and stable operation. With a <strong>-6A speed grade</strong>, it supports clock frequencies up to approximately <strong>166 MHz</strong>, making it suitable for high-performance digital systems. <br><br>Designed with a <strong>four-bank internal architecture and pipelined data paths</strong>, the MT48LC8M16A2P-6A-IT-L allows concurrent operations to improve throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, offering flexibility for system-level optimization. <br><br>Operating at a standard <strong>3.3V supply voltage</strong>, the device is compatible with <strong>LVTTL interface levels</strong>, enabling easy integration with microprocessors, DSPs, and FPGA-based designs. It also incorporates essential features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity and efficient memory management. <br><br>The memory is housed in a compact <strong>54-pin TSOP-II surface-mount package</strong>, making it ideal for space-constrained PCB layouts while ensuring reliable electrical performance. <br><br>The <strong>MT48LC8M16A2P-6A-IT-L</strong> is widely used in <strong>industrial automation systems, networking hardware, embedded controllers, consumer electronics, and display solutions</strong>, where high-speed and cost-effective SDRAM is essential.
MT48LC8M16A2P-6A-IT-L

Description: The MT48LC8M16A2P-6A-IT-L is a high-speed 128Mbit synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L Z / The <strong>MT48LC8M16A2P-6A:L Z</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication devices, and general-purpose applications requiring reliable and efficient volatile memory.<br><br>The device features a memory organization of <strong>8M x 16 bits</strong> and utilizes a <strong>4-bank internal architecture</strong>, allowing parallel operations and improved data throughput across system-level memory interfaces. All operations are synchronized to the clock signal through a <strong>fully synchronous interface</strong>, ensuring stable timing and predictable performance. <br><br>It operates with a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and supports clock speeds up to approximately <strong>167MHz</strong>, with an access time of around <strong>5.4ns</strong>, making it suitable for high-speed data processing and buffering applications. <br><br>The device supports advanced SDRAM functions including <strong>programmable burst lengths, auto precharge, auto refresh, self refresh, and burst termination</strong>, enabling efficient memory control and maintaining data integrity during continuous operation.<br><br>This variant is typically intended for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A:L Z provides a balance of performance and space efficiency for modern PCB designs.<br><br>The <strong>MT48LC8M16A2P-6A:L Z</strong> is widely used in <strong>embedded controllers, networking hardware, industrial electronics, consumer devices, and legacy computing systems</strong> where stable and cost-effective SDRAM memory is required.
MT48LC8M16A2P-6A:L Z

Description: The MT48LC8M16A2P-6A:L Z is a high-performance 128Mbit synchronou ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L TR / The <strong>MT48LC8M16A2P-6A:L TR</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose digital applications that require stable, cost-effective volatile memory.<br><br>The device is organized as <strong>8M x 16 bits</strong> and uses a <strong>4-bank internal architecture</strong>, allowing efficient parallel memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where inputs and outputs are referenced to the system clock for predictable timing and reliable high-speed performance.<br><br>It supports operation at <strong>3.0V to 3.6V</strong> with a typical supply voltage of <strong>3.3V</strong>, and the <strong>-6A speed grade</strong> supports clock frequencies up to approximately <strong>167MHz</strong> with an access time of about <strong>5.4ns</strong>. These characteristics make it suitable for memory subsystems that require dependable bandwidth and fast response.<br><br>The device includes standard SDRAM features such as <strong>programmable burst lengths</strong>, <strong>auto precharge</strong>, <strong>auto refresh</strong>, <strong>self refresh</strong>, and burst termination support, helping simplify memory control while maintaining data integrity across different operating conditions.<br><br>This version is supplied in a compact <strong>54-pin TSOP-II surface-mount package</strong> and the <strong>TR</strong> suffix indicates <strong>tape and reel packaging</strong>, making it well suited for automated SMT assembly in volume production environments.<br><br>The <strong>MT48LC8M16A2P-6A:L TR</strong> is widely used in <strong>embedded controllers, networking equipment, industrial electronics, consumer devices, and legacy computing platforms</strong> where reliable parallel SDRAM memory is required.
MT48LC8M16A2P-6A:L TR

Description: The MT48LC8M16A2P-6A:L TR is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L IT / The <strong>MT48LC8M16A2P-6A:L IT</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A:L IT supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A:L IT is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC8M16A2P-6A:L IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and consumer electronics</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A:L IT

Description: The MT48LC8M16A2P-6A:L IT is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L AT / The <strong>MT48LC8M16A2P-6A:L AT</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for automotive, embedded, and industrial applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A:L AT supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is designed for <strong>automotive-grade applications</strong>, offering enhanced reliability and extended temperature support for operation in harsh environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A:L AT is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC8M16A2P-6A:L AT</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, networking equipment, and communication devices</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A:L AT

Description: The MT48LC8M16A2P-6A:L AT is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A IT:L / The <strong>MT48LC8M16A2P-6A IT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A IT:L supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A IT:L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC8M16A2P-6A IT:L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and consumer electronics</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A IT:L

Description: The MT48LC8M16A2P-6A IT:L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A AT:L / The <strong>MT48LC8M16A2P-6A AT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for automotive, embedded, and industrial applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A AT:L supports clock frequencies up to approximately <strong>167 MHz</strong>, making it suitable for high-speed memory applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is designed for <strong>automotive-grade applications</strong>, offering enhanced reliability and extended temperature support for use in demanding environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A AT:L is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC8M16A2P-6A AT:L</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, communication devices, and consumer electronics</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A AT:L

Description: The MT48LC8M16A2P-6A AT:L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2B4-6A IT:L / The <strong>MT48LC8M16A2B4-6A IT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2B4-6A IT:L supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>54-ball VFBGA surface-mount form factor</strong>, the MT48LC8M16A2B4-6A IT:L is optimized for high-density PCB layouts while maintaining strong electrical performance and signal integrity.<br><br>The <strong>MT48LC8M16A2B4-6A IT:L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and cost-effective SDRAM memory is required.
MT48LC8M16A2B4-6A IT:L

Description: The MT48LC8M16A2B4-6A IT:L is a high-performance 128Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75:G TR / The <strong>MT48LC64M4A2P-75:G TR</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and industrial applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and reliable performance. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75:G TR supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM supports advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and pipelined operation</strong>, allowing efficient data transfers and optimized system performance. <br><br>This variant is supplied in <strong>tape and reel (TR) packaging</strong>, making it ideal for automated SMT assembly processes in high-volume production environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75:G TR is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal characteristics.<br><br>The <strong>MT48LC64M4A2P-75:G TR</strong> is widely used in <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong> where stable and high-speed SDRAM memory is required.
MT48LC64M4A2P-75:G TR

Description: The MT48LC64M4A2P-75:G TR is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75:G IT / The <strong>MT48LC64M4A2P-75:G IT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for industrial, embedded, and communication systems requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, allowing concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and stable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75:G IT supports clock frequencies up to approximately <strong>133 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, enabling efficient memory management and data integrity under various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75:G IT is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC64M4A2P-75:G IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC64M4A2P-75:G IT

Description: The MT48LC64M4A2P-75:G IT is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75:G / The <strong>MT48LC64M4A2P-75:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and communication applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, allowing concurrent memory access and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, enabling efficient memory management and data integrity under various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC64M4A2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, communication equipment, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC64M4A2P-75:G

Description: The MT48LC64M4A2P-75:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75 IT:G / The <strong>MT48LC64M4A2P-75 IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for industrial, embedded, and communication systems requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, allowing concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and stable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75 IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, enabling efficient memory management and data integrity under various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75 IT:G is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC64M4A2P-75 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC64M4A2P-75 IT:G

Description: The MT48LC64M4A2P-75 IT:G is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-75:G / The <strong>MT48LC4M32B2P-75:G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong>, making it suitable for stable and efficient memory performance in a wide range of applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments.<br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC4M32B2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC4M32B2P-75:G

Description: The MT48LC4M32B2P-75:G is a high-performance 128Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A-IT-L / The <strong>MT48LC4M32B2P-6A-IT-L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A-IT-L supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A-IT-L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC4M32B2P-6A-IT-L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A-IT-L

Description: The MT48LC4M32B2P-6A-IT-L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A-G / The <strong>MT48LC4M32B2P-6A-G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring reliable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable performance. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A-G supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A-G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC4M32B2P-6A-G</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A-G

Description: The MT48LC4M32B2P-6A-G is a high-performance 128Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A IT:L / The <strong>MT48LC4M32B2P-6A IT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A IT:L supports clock frequencies up to approximately <strong>167 MHz</strong>, making it suitable for high-speed memory applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications.<br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A IT:L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC4M32B2P-6A IT:L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A IT:L

Description: The MT48LC4M32B2P-6A IT:L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2B5-7 IT:G / The <strong>MT48LC4M32B2B5-7 IT:G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock for predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2B5-7 IT:G supports clock frequencies up to approximately <strong>143 MHz</strong> with an access time of around <strong>5.5 ns</strong>, making it suitable for high-speed and cost-effective memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity under various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>90-ball VFBGA surface-mount form factor</strong>, the MT48LC4M32B2B5-7 IT:G is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal reliability.<br><br>The <strong>MT48LC4M32B2B5-7 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2B5-7 IT:G

Description: The MT48LC4M32B2B5-7 IT:G is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2B5-6A-XIT-L / The <strong>MT48LC4M32B2B5-6A-XIT-L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and communication equipment requiring reliable volatile memory and efficient data throughput.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system performance. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal for predictable timing and stable operation. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the device supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM supports advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and burst terminate</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>90-ball VFBGA surface-mount form factor</strong>, the MT48LC4M32B2B5-6A-XIT-L is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>MT48LC4M32B2B5-6A-XIT-L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and cost-effective SDRAM memory is required.
MT48LC4M32B2B5-6A-XIT-L

Description: The MT48LC4M32B2B5-6A-XIT-L is a high-performance 128Mbit synchro ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G TR / The <strong>MT48LC32M8A2P-75:G TR</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G TR supports clock frequencies up to approximately <strong>133 MHz</strong>, providing stable performance for a wide range of digital applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is supplied in <strong>tape and reel (TR) packaging</strong>, making it suitable for automated SMT assembly processes in high-volume production environments. Additionally, it is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G TR is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75:G TR</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G TR

Description: The MT48LC32M8A2P-75:G TR is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G IT / The <strong>MT48LC32M8A2P-75:G IT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for industrial, embedded, and communication systems requiring reliable and stable volatile memory performance.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock to ensure predictable timing and efficient operation. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G IT supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and cost-effective memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G IT is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75:G IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G IT

Description: The MT48LC32M8A2P-75:G IT is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G / The <strong>MT48LC32M8A2P-75:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC32M8A2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G

Description: The MT48LC32M8A2P-75:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75 IT:G / The <strong>MT48LC32M8A2P-75 IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75 IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for stable and cost-effective memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75 IT:G is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75 IT:G

Description: The MT48LC32M8A2P-75 IT:G is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2TG-75:D / The <strong>MT48LC16M16A2TG-75:D</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent operations and improved memory throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and stable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2TG-75:D supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for cost-effective and stable memory solutions. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant typically supports <strong>industrial-grade temperature operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2TG-75:D is optimized for space-constrained PCB designs while maintaining strong electrical and thermal reliability.<br><br>The <strong>MT48LC16M16A2TG-75:D</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2TG-75:D

Description: The MT48LC16M16A2TG-75:D is a high-performance 256Mbit synchronou ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2TG-75 IT:D / The <strong>MT48LC16M16A2TG-75 IT:D</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and stable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and efficient data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2TG-75 IT:D supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2TG-75 IT:D is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2TG-75 IT:D</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2TG-75 IT:D

Description: The MT48LC16M16A2TG-75 IT:D is a high-performance 256Mbit synchro ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-7E-IT-G / The <strong>MT48LC16M16A2P-7E-IT-G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-7E-IT-G supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory applications. <br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-7E-IT-G is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-7E-IT-G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-7E-IT-G

Description: The MT48LC16M16A2P-7E-IT-G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-7E IT:G / The <strong>MT48LC16M16A2P-7E IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring reliable and stable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and efficient data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-7E IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory operation. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths, auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-7E IT:G is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-7E IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-7E IT:G

Description: The MT48LC16M16A2P-7E IT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-75:G / The <strong>MT48LC16M16A2P-75:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong>, making it suitable for stable and efficient memory performance in a wide range of applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-75:G</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-75:G

Description: The MT48LC16M16A2P-75:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-75 IT:G / The <strong>MT48LC16M16A2P-75 IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and efficient data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-75 IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-75 IT:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-75 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-75 IT:G

Description: The MT48LC16M16A2P-75 IT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A-G / The <strong>MT48LC16M16A2P-6A-G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the device supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A-G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A-G</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A-G

Description: The MT48LC16M16A2P-6A-G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G Z / The <strong>MT48LC16M16A2P-6A:G Z</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G Z supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically intended for <strong>standard commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for conventional electronics and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G Z is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G Z</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G Z

Description: The MT48LC16M16A2P-6A:G Z is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G TR / The <strong>MT48LC16M16A2P-6A:G TR</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G TR supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is supplied in <strong>tape and reel (TR) packaging</strong> for automated assembly processes and is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronics manufacturing environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G TR is optimized for space-efficient PCB layouts while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A:G TR</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G TR

Description: The MT48LC16M16A2P-6A:G TR is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G T / The <strong>MT48LC16M16A2P-6A:G T</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G T supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is typically intended for <strong>standard commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for conventional electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G T is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G T</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G T

Description: The MT48LC16M16A2P-6A:G T is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G L / The <strong>MT48LC16M16A2P-6A:G L</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G L supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications.<br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronics and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G L is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G L</strong> is widely used in <strong>embedded systems, consumer electronics, communication equipment, industrial controllers, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A:G L

Description: The MT48LC16M16A2P-6A:G L is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G IT / The <strong>MT48LC16M16A2P-6A:G IT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and efficient data handling. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G IT supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G IT is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A:G IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A:G IT

Description: The MT48LC16M16A2P-6A:G IT is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G AT / The <strong>MT48LC16M16A2P-6A:G AT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for automotive, embedded, and industrial applications requiring reliable and high-speed volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G AT supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is designed for <strong>automotive-grade applications</strong>, supporting extended temperature operation and enhanced reliability for use in harsh environments and mission-critical systems.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G AT is optimized for space-constrained PCB layouts while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A:G AT</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, communication equipment, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G AT

Description: The MT48LC16M16A2P-6A:G AT is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G / The <strong>MT48LC16M16A2P-6A:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and reliable data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronics and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G</strong> is widely used in <strong>embedded systems, consumer electronics, communication equipment, industrial controllers, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A:G

Description: The MT48LC16M16A2P-6A:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A IT:G / The <strong>MT48LC16M16A2P-6A IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A IT:G supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications.<br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A IT:G is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A IT:G

Description: The MT48LC16M16A2P-6A IT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A AT:G / The <strong>MT48LC16M16A2P-6A AT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, automotive electronics, and industrial applications requiring reliable volatile memory and stable data throughput.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system performance. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the system clock for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A supports clock frequencies up to approximately <strong>167 MHz (-6A speed grade)</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications.<br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions.<br><br>This variant is specified for <strong>automotive-grade operation</strong>, supporting extended temperature ranges typically up to <strong>+105°C</strong>, ensuring reliable performance in harsh environments and mission-critical systems.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A AT:G is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A AT:G</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, communication equipment, and legacy computing platforms</strong> where stable, high-speed SDRAM memory is required.
MT48LC16M16A2P-6A AT:G

Description: The MT48LC16M16A2P-6A AT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

NT5AD256M16F4-JR / The <strong>NT5AD256M16F4-JR</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and high-speed computing applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD256M16F4-JR supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. It is optimized for stable performance and reduced power consumption compared to previous DDR generations.<br><br>The device supports advanced features such as <strong>on-die termination (ODT), programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD256M16F4-JR is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency.<br><br>The <strong>NT5AD256M16F4-JR</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms</strong> where high-speed volatile memory and reliable operation are required.
NT5AD256M16F4-JR

Description: The NT5AD256M16F4-JR is a high-performance 4Gbit DDR4 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5AD256M16E4-JRU / The <strong>NT5AD256M16E4-JRU</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for industrial, embedded, and high-speed computing applications requiring reliable bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD256M16E4-JRU supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. <br><br>This component is specified for <strong>industrial-grade operation</strong> with an extended temperature range of approximately <strong>-40°C to +105°C</strong>, ensuring stable and reliable performance in harsh environments. <br><br>The device supports advanced features such as <strong>on-die termination (ODT), programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD256M16E4-JRU is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>NT5AD256M16E4-JRU</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, automotive electronics, and high-performance computing platforms</strong> where high-speed volatile memory and extended temperature reliability are required.
NT5AD256M16E4-JRU

Description: The NT5AD256M16E4-JRU is a high-performance 4Gbit DDR4 synchronou ...
Package: T&R | MOQ: 2000 | MPQ: 2000













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