All Products SDRAM

MT40A256M16GE-083E:B TR / The MT40A256M16GE-083E:B TR is a high-efficiency <strong>4Gb DDR4 SDRAM</strong> manufactured by <strong>Micron Technology</strong>, designed for modern embedded systems, industrial computing, and high-speed digital applications. It features a memory organization of <strong>256M × 16 bits</strong>, delivering a balanced combination of density and performance for demanding memory requirements. <br><br>This device utilizes a <strong>DDR4 architecture</strong>, enabling data transfers on both rising and falling edges of the clock signal for improved bandwidth and system efficiency. With support for data rates up to approximately <strong>2400 MT/s</strong>, it provides reliable high-speed performance for a wide range of applications. <br><br>The MT40A256M16GE-083E:B TR incorporates a <strong>multi-bank and bank group architecture</strong>, allowing parallel internal operations and enhanced memory access efficiency. It supports features such as <strong>burst length 8 (BL8), programmable CAS latency, and on-die termination (ODT)</strong>, ensuring flexibility and signal integrity in complex system designs. <br><br>Operating at a low <strong>1.2V supply voltage</strong>, the device offers improved power efficiency compared to earlier SDRAM technologies. It also supports <strong>POD (Pseudo Open Drain) I/O interface</strong>, which enhances signal quality and reduces power consumption. <br><br>Encased in a compact <strong>96-ball FBGA surface-mount package</strong>, the MT40A256M16GE-083E:B TR is well-suited for high-density PCB layouts while maintaining strong electrical reliability. <br><br>The <strong>MT40A256M16GE-083E:B TR</strong> is widely used in <strong>industrial systems, networking equipment, embedded platforms, automotive electronics, and high-performance computing applications</strong>, where fast, reliable, and energy-efficient DDR4 memory is required.
MT40A256M16GE-083E:B TR

Description: The MT40A256M16GE-083E:B TR is a high-efficiency 4Gb DDR4 SDRAM manufactu ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT40A512M16TD-062E:R / The MT40A512M16TD-062E:R is a high-performance <strong>8Gb DDR4 SDRAM</strong> developed by <strong>Micron Technology</strong>, designed for advanced computing, embedded systems, and high-speed data processing applications. It features a memory organization of <strong>512M × 16 bits</strong>, delivering high density and efficient data throughput for modern system requirements. <br><br>This device operates using a <strong>double data rate (DDR4) architecture</strong>, transferring data on both the rising and falling edges of the clock signal, which significantly improves bandwidth and overall system efficiency. With a data rate of up to <strong>3200 MT/s (0.625ns clock cycle)</strong>, it is well-suited for high-speed memory applications. <br><br>The MT40A512M16TD-062E:R incorporates a <strong>bank group architecture with multiple internal banks</strong>, enabling parallel operations and improved memory access efficiency. It supports advanced features such as <strong>burst length 8 (BL8), on-die termination (ODT), and programmable CAS latency</strong>, allowing optimized performance across various system designs. <br><br>Operating at a low <strong>1.2V supply voltage</strong>, the device offers improved power efficiency compared to previous generation SDRAM technologies. It is compatible with modern memory controllers and supports <strong>POD (Pseudo Open Drain) I/O interface</strong> for enhanced signal integrity. <br><br>The memory is packaged in a compact <strong>96-ball FBGA surface-mount package</strong>, making it suitable for high-density PCB layouts while ensuring reliable electrical performance. <br><br>The <strong>MT40A512M16TD-062E:R</strong> is widely used in <strong>high-performance embedded systems, networking equipment, industrial computing, automotive electronics, and data-intensive applications</strong>, where fast, reliable, and energy-efficient DDR4 memory is essential.
MT40A512M16TD-062E:R

Description: The MT40A512M16TD-062E:R is a high-performance 8Gb DDR4 SDRAM developed b ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-75:G / The MT48LC8M16A2P-75:G is a dependable <strong>128Mbit synchronous DRAM (SDRAM)</strong> manufactured by <strong>Micron Technology</strong>, designed for embedded, industrial, and communication systems that require stable and efficient high-speed memory. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling fast parallel data access and optimized bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring accurate timing and reliable operation. With a <strong>-75 speed grade</strong>, it supports clock frequencies up to approximately <strong>133 MHz</strong>, making it suitable for a wide range of applications. <br><br>Its internal design includes a <strong>four-bank architecture with pipelined data paths</strong>, allowing concurrent operations that enhance memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, offering flexibility for different system requirements. <br><br>The MT48LC8M16A2P-75:G operates at a <strong>3.3V supply voltage</strong> and is compatible with standard <strong>LVTTL logic levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA platforms. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity during operation. <br><br>Encased in a compact <strong>54-pin TSOP-II surface-mount package</strong>, the device is optimized for space-constrained PCB designs while maintaining robust electrical performance. <br><br>The <strong>MT48LC8M16A2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display applications</strong>, where reliable and cost-effective SDRAM solutions are required.
MT48LC8M16A2P-75:G

Description: The MT48LC8M16A2P-75:G is a dependable 128Mbit synchronous DRAM (SDRAM) m ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A-IT-L / The MT48LC8M16A2P-6A-IT-L is a high-speed <strong>128Mbit synchronous DRAM (SDRAM)</strong> from <strong>Micron Technology</strong>, engineered for demanding embedded and industrial applications requiring fast and reliable volatile memory. It is organized as <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth performance. <br><br>The device features a <strong>fully synchronous interface</strong>, where all inputs and outputs are aligned with the system clock, ensuring consistent timing and stable operation. With a <strong>-6A speed grade</strong>, it supports clock frequencies up to approximately <strong>166 MHz</strong>, making it suitable for high-performance digital systems. <br><br>Designed with a <strong>four-bank internal architecture and pipelined data paths</strong>, the MT48LC8M16A2P-6A-IT-L allows concurrent operations to improve throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, offering flexibility for system-level optimization. <br><br>Operating at a standard <strong>3.3V supply voltage</strong>, the device is compatible with <strong>LVTTL interface levels</strong>, enabling easy integration with microprocessors, DSPs, and FPGA-based designs. It also incorporates essential features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity and efficient memory management. <br><br>The memory is housed in a compact <strong>54-pin TSOP-II surface-mount package</strong>, making it ideal for space-constrained PCB layouts while ensuring reliable electrical performance. <br><br>The <strong>MT48LC8M16A2P-6A-IT-L</strong> is widely used in <strong>industrial automation systems, networking hardware, embedded controllers, consumer electronics, and display solutions</strong>, where high-speed and cost-effective SDRAM is essential.
MT48LC8M16A2P-6A-IT-L

Description: The MT48LC8M16A2P-6A-IT-L is a high-speed 128Mbit synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L Z / The <strong>MT48LC8M16A2P-6A:L Z</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication devices, and general-purpose applications requiring reliable and efficient volatile memory.<br><br>The device features a memory organization of <strong>8M x 16 bits</strong> and utilizes a <strong>4-bank internal architecture</strong>, allowing parallel operations and improved data throughput across system-level memory interfaces. All operations are synchronized to the clock signal through a <strong>fully synchronous interface</strong>, ensuring stable timing and predictable performance. <br><br>It operates with a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and supports clock speeds up to approximately <strong>167MHz</strong>, with an access time of around <strong>5.4ns</strong>, making it suitable for high-speed data processing and buffering applications. <br><br>The device supports advanced SDRAM functions including <strong>programmable burst lengths, auto precharge, auto refresh, self refresh, and burst termination</strong>, enabling efficient memory control and maintaining data integrity during continuous operation.<br><br>This variant is typically intended for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A:L Z provides a balance of performance and space efficiency for modern PCB designs.<br><br>The <strong>MT48LC8M16A2P-6A:L Z</strong> is widely used in <strong>embedded controllers, networking hardware, industrial electronics, consumer devices, and legacy computing systems</strong> where stable and cost-effective SDRAM memory is required.
MT48LC8M16A2P-6A:L Z

Description: The MT48LC8M16A2P-6A:L Z is a high-performance 128Mbit synchronou ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L TR / The <strong>MT48LC8M16A2P-6A:L TR</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose digital applications that require stable, cost-effective volatile memory.<br><br>The device is organized as <strong>8M x 16 bits</strong> and uses a <strong>4-bank internal architecture</strong>, allowing efficient parallel memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where inputs and outputs are referenced to the system clock for predictable timing and reliable high-speed performance.<br><br>It supports operation at <strong>3.0V to 3.6V</strong> with a typical supply voltage of <strong>3.3V</strong>, and the <strong>-6A speed grade</strong> supports clock frequencies up to approximately <strong>167MHz</strong> with an access time of about <strong>5.4ns</strong>. These characteristics make it suitable for memory subsystems that require dependable bandwidth and fast response.<br><br>The device includes standard SDRAM features such as <strong>programmable burst lengths</strong>, <strong>auto precharge</strong>, <strong>auto refresh</strong>, <strong>self refresh</strong>, and burst termination support, helping simplify memory control while maintaining data integrity across different operating conditions.<br><br>This version is supplied in a compact <strong>54-pin TSOP-II surface-mount package</strong> and the <strong>TR</strong> suffix indicates <strong>tape and reel packaging</strong>, making it well suited for automated SMT assembly in volume production environments.<br><br>The <strong>MT48LC8M16A2P-6A:L TR</strong> is widely used in <strong>embedded controllers, networking equipment, industrial electronics, consumer devices, and legacy computing platforms</strong> where reliable parallel SDRAM memory is required.
MT48LC8M16A2P-6A:L TR

Description: The MT48LC8M16A2P-6A:L TR is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L IT / The <strong>MT48LC8M16A2P-6A:L IT</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A:L IT supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A:L IT is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC8M16A2P-6A:L IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and consumer electronics</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A:L IT

Description: The MT48LC8M16A2P-6A:L IT is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A:L AT / The <strong>MT48LC8M16A2P-6A:L AT</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for automotive, embedded, and industrial applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A:L AT supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is designed for <strong>automotive-grade applications</strong>, offering enhanced reliability and extended temperature support for operation in harsh environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A:L AT is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC8M16A2P-6A:L AT</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, networking equipment, and communication devices</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A:L AT

Description: The MT48LC8M16A2P-6A:L AT is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A IT:L / The <strong>MT48LC8M16A2P-6A IT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A IT:L supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A IT:L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC8M16A2P-6A IT:L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and consumer electronics</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A IT:L

Description: The MT48LC8M16A2P-6A IT:L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2P-6A AT:L / The <strong>MT48LC8M16A2P-6A AT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for automotive, embedded, and industrial applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2P-6A AT:L supports clock frequencies up to approximately <strong>167 MHz</strong>, making it suitable for high-speed memory applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is designed for <strong>automotive-grade applications</strong>, offering enhanced reliability and extended temperature support for use in demanding environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC8M16A2P-6A AT:L is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC8M16A2P-6A AT:L</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, communication devices, and consumer electronics</strong> where stable and high-speed SDRAM memory is required.
MT48LC8M16A2P-6A AT:L

Description: The MT48LC8M16A2P-6A AT:L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC8M16A2B4-6A IT:L / The <strong>MT48LC8M16A2B4-6A IT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>8M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC8M16A2B4-6A IT:L supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>54-ball VFBGA surface-mount form factor</strong>, the MT48LC8M16A2B4-6A IT:L is optimized for high-density PCB layouts while maintaining strong electrical performance and signal integrity.<br><br>The <strong>MT48LC8M16A2B4-6A IT:L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and cost-effective SDRAM memory is required.
MT48LC8M16A2B4-6A IT:L

Description: The MT48LC8M16A2B4-6A IT:L is a high-performance 128Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75:G TR / The <strong>MT48LC64M4A2P-75:G TR</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and industrial applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and reliable performance. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75:G TR supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM supports advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and pipelined operation</strong>, allowing efficient data transfers and optimized system performance. <br><br>This variant is supplied in <strong>tape and reel (TR) packaging</strong>, making it ideal for automated SMT assembly processes in high-volume production environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75:G TR is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal characteristics.<br><br>The <strong>MT48LC64M4A2P-75:G TR</strong> is widely used in <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong> where stable and high-speed SDRAM memory is required.
MT48LC64M4A2P-75:G TR

Description: The MT48LC64M4A2P-75:G TR is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75:G IT / The <strong>MT48LC64M4A2P-75:G IT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for industrial, embedded, and communication systems requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, allowing concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and stable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75:G IT supports clock frequencies up to approximately <strong>133 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, enabling efficient memory management and data integrity under various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75:G IT is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC64M4A2P-75:G IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC64M4A2P-75:G IT

Description: The MT48LC64M4A2P-75:G IT is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75:G / The <strong>MT48LC64M4A2P-75:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and communication applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, allowing concurrent memory access and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, enabling efficient memory management and data integrity under various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC64M4A2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, communication equipment, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC64M4A2P-75:G

Description: The MT48LC64M4A2P-75:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC64M4A2P-75 IT:G / The <strong>MT48LC64M4A2P-75 IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for industrial, embedded, and communication systems requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>64M x 4 bits</strong> and features a <strong>4-bank internal architecture</strong>, allowing concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and stable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC64M4A2P-75 IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, enabling efficient memory management and data integrity under various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC64M4A2P-75 IT:G is optimized for space-constrained PCB designs while maintaining strong electrical performance.<br><br>The <strong>MT48LC64M4A2P-75 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC64M4A2P-75 IT:G

Description: The MT48LC64M4A2P-75 IT:G is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-75:G / The <strong>MT48LC4M32B2P-75:G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong>, making it suitable for stable and efficient memory performance in a wide range of applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments.<br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC4M32B2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC4M32B2P-75:G

Description: The MT48LC4M32B2P-75:G is a high-performance 128Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A-IT-L / The <strong>MT48LC4M32B2P-6A-IT-L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory solutions.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A-IT-L supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A-IT-L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC4M32B2P-6A-IT-L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A-IT-L

Description: The MT48LC4M32B2P-6A-IT-L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A-G / The <strong>MT48LC4M32B2P-6A-G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring reliable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and stable performance. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A-G supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A-G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC4M32B2P-6A-G</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A-G

Description: The MT48LC4M32B2P-6A-G is a high-performance 128Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2P-6A IT:L / The <strong>MT48LC4M32B2P-6A IT:L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2P-6A IT:L supports clock frequencies up to approximately <strong>167 MHz</strong>, making it suitable for high-speed memory applications.<br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications.<br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the MT48LC4M32B2P-6A IT:L is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC4M32B2P-6A IT:L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2P-6A IT:L

Description: The MT48LC4M32B2P-6A IT:L is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2B5-7 IT:G / The <strong>MT48LC4M32B2B5-7 IT:G</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock for predictable timing and stable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC4M32B2B5-7 IT:G supports clock frequencies up to approximately <strong>143 MHz</strong> with an access time of around <strong>5.5 ns</strong>, making it suitable for high-speed and cost-effective memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity under various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>90-ball VFBGA surface-mount form factor</strong>, the MT48LC4M32B2B5-7 IT:G is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal reliability.<br><br>The <strong>MT48LC4M32B2B5-7 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and high-speed SDRAM memory is required.
MT48LC4M32B2B5-7 IT:G

Description: The MT48LC4M32B2B5-7 IT:G is a high-performance 128Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC4M32B2B5-6A-XIT-L / The <strong>MT48LC4M32B2B5-6A-XIT-L</strong> is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial applications, and communication equipment requiring reliable volatile memory and efficient data throughput.<br><br>The device is organized as <strong>4M x 32 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system performance. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal for predictable timing and stable operation. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the device supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM supports advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and burst terminate</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>90-ball VFBGA surface-mount form factor</strong>, the MT48LC4M32B2B5-6A-XIT-L is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>MT48LC4M32B2B5-6A-XIT-L</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and communication devices</strong> where stable and cost-effective SDRAM memory is required.
MT48LC4M32B2B5-6A-XIT-L

Description: The MT48LC4M32B2B5-6A-XIT-L is a high-performance 128Mbit synchro ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G TR / The <strong>MT48LC32M8A2P-75:G TR</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G TR supports clock frequencies up to approximately <strong>133 MHz</strong>, providing stable performance for a wide range of digital applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is supplied in <strong>tape and reel (TR) packaging</strong>, making it suitable for automated SMT assembly processes in high-volume production environments. Additionally, it is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G TR is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75:G TR</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G TR

Description: The MT48LC32M8A2P-75:G TR is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G IT / The <strong>MT48LC32M8A2P-75:G IT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for industrial, embedded, and communication systems requiring reliable and stable volatile memory performance.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory access and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock to ensure predictable timing and efficient operation. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G IT supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and cost-effective memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G IT is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75:G IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G IT

Description: The MT48LC32M8A2P-75:G IT is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75:G / The <strong>MT48LC32M8A2P-75:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC32M8A2P-75:G</strong> is widely used in <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75:G

Description: The MT48LC32M8A2P-75:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC32M8A2P-75 IT:G / The <strong>MT48LC32M8A2P-75 IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>32M x 8 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC32M8A2P-75 IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for stable and cost-effective memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC32M8A2P-75 IT:G is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC32M8A2P-75 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC32M8A2P-75 IT:G

Description: The MT48LC32M8A2P-75 IT:G is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2TG-75:D / The <strong>MT48LC16M16A2TG-75:D</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and efficient volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent operations and improved memory throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and stable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2TG-75:D supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for cost-effective and stable memory solutions. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant typically supports <strong>industrial-grade temperature operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2TG-75:D is optimized for space-constrained PCB designs while maintaining strong electrical and thermal reliability.<br><br>The <strong>MT48LC16M16A2TG-75:D</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2TG-75:D

Description: The MT48LC16M16A2TG-75:D is a high-performance 256Mbit synchronou ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2TG-75 IT:D / The <strong>MT48LC16M16A2TG-75 IT:D</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and stable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized with the system clock, ensuring predictable timing and efficient data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2TG-75 IT:D supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in harsh environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2TG-75 IT:D is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2TG-75 IT:D</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2TG-75 IT:D

Description: The MT48LC16M16A2TG-75 IT:D is a high-performance 256Mbit synchro ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-7E-IT-G / The <strong>MT48LC16M16A2P-7E-IT-G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-7E-IT-G supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory applications. <br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-7E-IT-G is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-7E-IT-G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-7E-IT-G

Description: The MT48LC16M16A2P-7E-IT-G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-7E IT:G / The <strong>MT48LC16M16A2P-7E IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring reliable and stable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and efficient data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-7E IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory operation. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths, auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-7E IT:G is optimized for space-constrained PCB designs while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-7E IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-7E IT:G

Description: The MT48LC16M16A2P-7E IT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-75:G / The <strong>MT48LC16M16A2P-75:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-75:G supports clock frequencies up to approximately <strong>133 MHz</strong>, making it suitable for stable and efficient memory performance in a wide range of applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-75:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-75:G</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-75:G

Description: The MT48LC16M16A2P-75:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-75 IT:G / The <strong>MT48LC16M16A2P-75 IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring reliable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and efficient data transfer.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-75 IT:G supports clock frequencies up to approximately <strong>133 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for stable and efficient memory performance. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-75 IT:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-75 IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-75 IT:G

Description: The MT48LC16M16A2P-75 IT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A-G / The <strong>MT48LC16M16A2P-6A-G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the device supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The SDRAM includes advanced features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A-G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A-G</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A-G

Description: The MT48LC16M16A2P-6A-G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G Z / The <strong>MT48LC16M16A2P-6A:G Z</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G Z supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically intended for <strong>standard commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for conventional electronics and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G Z is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G Z</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G Z

Description: The MT48LC16M16A2P-6A:G Z is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G TR / The <strong>MT48LC16M16A2P-6A:G TR</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, communication equipment, and general-purpose applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring predictable timing and reliable performance.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G TR supports clock frequencies up to approximately <strong>167 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is supplied in <strong>tape and reel (TR) packaging</strong> for automated assembly processes and is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronics manufacturing environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G TR is optimized for space-efficient PCB layouts while maintaining reliable electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A:G TR</strong> is widely used in <strong>embedded systems, industrial controllers, communication devices, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G TR

Description: The MT48LC16M16A2P-6A:G TR is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G T / The <strong>MT48LC16M16A2P-6A:G T</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose applications requiring stable and cost-effective volatile memory solutions.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring predictable timing and reliable data transfer. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G T supports clock frequencies up to approximately <strong>167 MHz</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is typically intended for <strong>standard commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for conventional electronic systems and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G T is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G T</strong> is widely used in <strong>embedded systems, communication equipment, industrial controllers, consumer electronics, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G T

Description: The MT48LC16M16A2P-6A:G T is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G L / The <strong>MT48LC16M16A2P-6A:G L</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G L supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications.<br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronics and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G L is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G L</strong> is widely used in <strong>embedded systems, consumer electronics, communication equipment, industrial controllers, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A:G L

Description: The MT48LC16M16A2P-6A:G L is a high-performance 256Mbit synchrono ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G IT / The <strong>MT48LC16M16A2P-6A:G IT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication applications requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and efficient data handling. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G IT supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-refresh, and power-down modes</strong>, ensuring efficient memory management and data integrity across various operating conditions. <br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, ensuring reliable performance in demanding environments and long-life applications. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G IT is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A:G IT</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A:G IT

Description: The MT48LC16M16A2P-6A:G IT is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G AT / The <strong>MT48LC16M16A2P-6A:G AT</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for automotive, embedded, and industrial applications requiring reliable and high-speed volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved data throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G AT supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is designed for <strong>automotive-grade applications</strong>, supporting extended temperature operation and enhanced reliability for use in harsh environments and mission-critical systems.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G AT is optimized for space-constrained PCB layouts while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A:G AT</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, communication equipment, and legacy computing platforms</strong> where stable and high-speed SDRAM memory is required.
MT48LC16M16A2P-6A:G AT

Description: The MT48LC16M16A2P-6A:G AT is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A:G / The <strong>MT48LC16M16A2P-6A:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, consumer electronics, and general-purpose memory applications requiring stable and cost-effective volatile memory.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and reliable data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A:G supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications. <br><br>The device supports advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions. <br><br>This variant is typically specified for <strong>commercial temperature range operation (0°C to +70°C)</strong>, making it suitable for standard electronics and non-harsh environments. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A:G is optimized for space-constrained PCB designs while maintaining reliable electrical performance.<br><br>The <strong>MT48LC16M16A2P-6A:G</strong> is widely used in <strong>embedded systems, consumer electronics, communication equipment, industrial controllers, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A:G

Description: The MT48LC16M16A2P-6A:G is a high-performance 256Mbit synchronous ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A IT:G / The <strong>MT48LC16M16A2P-6A IT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, industrial electronics, and communication equipment requiring stable and reliable volatile memory performance.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system throughput. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A IT:G supports clock frequencies up to approximately <strong>167 MHz</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications.<br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity across various operating conditions.<br><br>This variant is specified for <strong>industrial temperature range operation (-40°C to +85°C)</strong>, providing reliable performance in demanding environments and long-life applications.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A IT:G is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A IT:G</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, communication devices, and legacy computing platforms</strong> where stable and cost-effective SDRAM memory is required.
MT48LC16M16A2P-6A IT:G

Description: The MT48LC16M16A2P-6A IT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

MT48LC16M16A2P-6A AT:G / The <strong>MT48LC16M16A2P-6A AT:G</strong> is a high-performance <strong>256Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>Micron Technology</strong>, designed for embedded systems, automotive electronics, and industrial applications requiring reliable volatile memory and stable data throughput.<br><br>The device is organized as <strong>16M x 16 bits</strong> and features a <strong>4-bank internal architecture</strong>, enabling concurrent memory operations and improved system performance. It operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the system clock for predictable timing and efficient data handling.<br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the MT48LC16M16A2P-6A supports clock frequencies up to approximately <strong>167 MHz (-6A speed grade)</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed memory applications.<br><br>The device includes advanced SDRAM features such as <strong>programmable burst lengths (1, 2, 4, 8, full page), auto-precharge, auto-refresh, and self-refresh modes</strong>, ensuring efficient memory management and data integrity under various operating conditions.<br><br>This variant is specified for <strong>automotive-grade operation</strong>, supporting extended temperature ranges typically up to <strong>+105°C</strong>, ensuring reliable performance in harsh environments and mission-critical systems.<br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the MT48LC16M16A2P-6A AT:G is optimized for space-constrained PCB designs while maintaining strong electrical and thermal performance.<br><br>The <strong>MT48LC16M16A2P-6A AT:G</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, communication equipment, and legacy computing platforms</strong> where stable, high-speed SDRAM memory is required.
MT48LC16M16A2P-6A AT:G

Description: The MT48LC16M16A2P-6A AT:G is a high-performance 256Mbit synchron ...
Package: T&R | MOQ: 1000 | MPQ: 1000

NT5AD256M16F4-JR / The <strong>NT5AD256M16F4-JR</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and high-speed computing applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD256M16F4-JR supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. It is optimized for stable performance and reduced power consumption compared to previous DDR generations.<br><br>The device supports advanced features such as <strong>on-die termination (ODT), programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD256M16F4-JR is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency.<br><br>The <strong>NT5AD256M16F4-JR</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms</strong> where high-speed volatile memory and reliable operation are required.
NT5AD256M16F4-JR

Description: The NT5AD256M16F4-JR is a high-performance 4Gbit DDR4 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5AD256M16E4-JRU / The <strong>NT5AD256M16E4-JRU</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for industrial, embedded, and high-speed computing applications requiring reliable bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD256M16E4-JRU supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. <br><br>This component is specified for <strong>industrial-grade operation</strong> with an extended temperature range of approximately <strong>-40°C to +105°C</strong>, ensuring stable and reliable performance in harsh environments. <br><br>The device supports advanced features such as <strong>on-die termination (ODT), programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD256M16E4-JRU is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>NT5AD256M16E4-JRU</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, automotive electronics, and high-performance computing platforms</strong> where high-speed volatile memory and extended temperature reliability are required.
NT5AD256M16E4-JRU

Description: The NT5AD256M16E4-JRU is a high-performance 4Gbit DDR4 synchronou ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5AD256M16E4-JRI / The <strong>NT5AD256M16E4-JRI</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for industrial, embedded, and high-speed computing applications requiring reliable bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. <br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD256M16E4-JRI supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. It is optimized for stable operation and reduced power consumption compared to earlier memory generations. <br><br>The device is specified for an extended <strong>industrial temperature range of -40°C to +95°C</strong>, ensuring reliable performance in harsh environments and long-life applications. It also supports features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize system power management. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD256M16E4-JRI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency. <br><br>The <strong>NT5AD256M16E4-JRI</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, automotive electronics, and computing platforms</strong> where high-speed volatile memory and reliable operation are required.
NT5AD256M16E4-JRI

Description: The NT5AD256M16E4-JRI is a high-performance 4Gbit DDR4 synchronou ...
Package: T&R | MOQ: 2000 | MPQ: 2000

W664GG6RB06J / The <strong>W664GG6RB06J</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Winbond Electronics</strong>, designed for embedded systems, industrial computing, and high-speed memory applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>multi-bank architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>DDR4 interface with POD12 signaling</strong>, ensuring reliable high-speed data transfer and improved signal integrity.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the W664GG6RB06J supports clock frequencies up to <strong>1600 MHz</strong>, providing stable performance while maintaining reduced power consumption compared to earlier DDR memory generations.<br><br>The device includes essential features such as <strong>auto-refresh, self-refresh, burst operation, and advanced timing control</strong>, ensuring reliable data retention and optimized system performance under varying operating conditions.<br><br>Packaged in a compact <strong>96-ball VFBGA surface-mount form factor</strong>, the W664GG6RB06J is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency.<br><br>The <strong>W664GG6RB06J</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and high-performance computing platforms</strong> where reliable and high-speed volatile memory is required.
W664GG6RB06J

Description: The W664GG6RB06J is a high-performance 4Gbit DDR4 synchronous DRA ...
Package: TRAY | MOQ: 198 | MPQ: 198

W664GG6RB06I / The <strong>W664GG6RB06I</strong> is a high-performance <strong>4Gbit DDR4 synchronous DRAM</strong> developed by <strong>Winbond Electronics</strong>, designed for embedded systems, industrial computing, and high-speed memory applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>multi-bank architecture</strong>, enabling parallel operations and improved data throughput. It utilizes a <strong>DDR4 interface with POD12 signaling</strong>, allowing reliable high-speed data transfer on both clock edges with enhanced signal integrity.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the W664GG6RB06I supports clock frequencies up to <strong>1600 MHz</strong> and data rates suitable for modern high-speed applications, while maintaining reduced power consumption compared to previous DDR generations.<br><br>The device incorporates key features such as <strong>auto-refresh, self-refresh, burst operation, and advanced timing control</strong>, ensuring stable data retention and optimized performance across various system conditions. It also supports industrial temperature operation for reliable use in demanding environments.<br><br>Packaged in a compact <strong>96-ball VFBGA surface-mount form factor</strong>, the W664GG6RB06I is optimized for high-density PCB layouts and robust signal integrity in space-constrained designs.<br><br>The <strong>W664GG6RB06I</strong> is widely used in <strong>industrial controllers, embedded systems, networking equipment, automotive electronics, and high-performance computing platforms</strong> where reliable and high-speed volatile memory is required.
W664GG6RB06I

Description: The W664GG6RB06I is a high-performance 4Gbit DDR4 synchronous DRA ...
Package: TRAY | MOQ: 198 | MPQ: 198

NT5CC512M8EQ-EKA / The <strong>NT5CC512M8EQ-EKA</strong> is a high-performance <strong>4Gbit DDR3L synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, specifically designed for automotive, industrial, and embedded applications requiring reliable high-speed memory with low power consumption.<br><br>The device is organized as <strong>512M x 8 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling efficient parallel operations and improved data throughput. It utilizes a <strong>double data rate (DDR3L) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced bandwidth efficiency.<br><br>Operating at a nominal voltage of <strong>1.35V</strong>, the NT5CC512M8EQ-EKA supports data rates up to <strong>1866 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. Its low-voltage operation helps reduce overall system power consumption compared to standard DDR3 memory solutions.<br><br>This component is qualified for <strong>automotive-grade applications</strong> and supports an extended temperature range of approximately <strong>-40°C to +95°C</strong>, ensuring stable and reliable performance in harsh environments and mission-critical systems.<br><br>The device includes essential features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring data integrity and optimized power management under various operating conditions.<br><br>Packaged in a compact <strong>78-ball FBGA surface-mount form factor</strong>, the NT5CC512M8EQ-EKA is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal reliability.<br><br>The <strong>NT5CC512M8EQ-EKA</strong> is widely used in <strong>automotive electronics, industrial controllers, embedded systems, networking equipment, and high-reliability computing platforms</strong> where stable, low-power, and high-speed volatile memory is required.
NT5CC512M8EQ-EKA

Description: The NT5CC512M8EQ-EKA is a high-performance 4Gbit DDR3L synchronou ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CB256M8GN-DI / The <strong>NT5CB256M8GN-DI</strong> is a high-performance <strong>2Gbit DDR3 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and computing applications requiring reliable memory bandwidth and stable operation.<br><br>The device is organized as <strong>256M x 8 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel memory operations and improved data throughput. It utilizes a <strong>double data rate (DDR3) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.5V</strong>, the NT5CB256M8GN-DI supports data rates up to <strong>1600 Mbps</strong> with a clock frequency around <strong>800 MHz</strong>, making it suitable for high-speed applications while maintaining balanced power consumption.<br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and efficient operation across various system conditions.<br><br>Packaged in a compact <strong>78-ball FBGA surface-mount form factor</strong>, the NT5CB256M8GN-DI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>NT5CB256M8GN-DI</strong> is widely used in <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and computing platforms</strong> where stable and high-speed volatile memory is required.
NT5CB256M8GN-DI

Description: The NT5CB256M8GN-DI is a high-performance 2Gbit DDR3 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5DS32M16ES-5T / The <strong>NT5DS32M16ES-5T</strong> is a high-performance <strong>512Mbit DDR synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and high-speed memory applications requiring reliable bandwidth and stable operation.<br><br>The device is organized as <strong>32M x 16 bits</strong> and features an advanced <strong>4-bank internal architecture</strong>, enabling concurrent operations and improved data throughput. It utilizes a <strong>double data rate (DDR) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. <br><br>Operating at a nominal voltage of <strong>2.5V</strong>, the NT5DS32M16ES-5T supports data rates up to <strong>400 Mbps (DDR-400)</strong> with clock speeds around <strong>200 MHz</strong>, making it suitable for high-speed applications while maintaining stable power consumption. <br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, and self-refresh</strong>, ensuring reliable data integrity and efficient memory operation across various system conditions.<br><br>Packaged in a compact <strong>66-pin TSOP-II surface-mount form factor</strong>, the NT5DS32M16ES-5T is optimized for space-efficient PCB layouts while maintaining reliable signal integrity and thermal performance.<br><br>The <strong>NT5DS32M16ES-5T</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and legacy computing platforms</strong> where stable DDR memory performance and cost-effective solutions are required.
NT5DS32M16ES-5T

Description: The NT5DS32M16ES-5T is a high-performance 512Mbit DDR synchronous ...
Package: TRAY | MOQ: 1000 | MPQ: 1000

NT5AD512M16C4-JR / The <strong>NT5AD512M16C4-JR</strong> is a high-performance <strong>8Gbit DDR4 synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and high-speed computing applications requiring reliable bandwidth and low power consumption.<br><br>The device is organized as <strong>512M x 16 bits</strong> and features an advanced <strong>multi-bank architecture</strong> with bank grouping, enabling parallel operations and improved data throughput. It utilizes a <strong>double data rate (DDR4) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.2V</strong>, the NT5AD512M16C4-JR supports data rates up to <strong>3200 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. Its architecture is optimized for improved performance and reduced power consumption compared to earlier DDR generations.<br><br>The device includes advanced features such as <strong>on-die termination (ODT), auto-refresh, self-refresh, and temperature-compensated refresh</strong>, ensuring reliable data integrity and stable operation across varying environmental conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5AD512M16C4-JR is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency.<br><br>The <strong>NT5AD512M16C4-JR</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms</strong> where high-speed volatile memory and dependable performance are required.
NT5AD512M16C4-JR

Description: The NT5AD512M16C4-JR is a high-performance 8Gbit DDR4 synchronous ...
Package: T&R | MOQ: 2000 | MPQ: 2000

NT5CC256M16ER-EKI / The <strong>NT5CC256M16ER-EKI</strong> is a high-performance <strong>4Gbit DDR3L synchronous DRAM</strong> developed by <strong>Nanya Technology</strong>, designed for embedded systems, industrial electronics, and high-speed computing applications requiring efficient bandwidth and low power consumption.<br><br>The device is organized as <strong>256M x 16 bits</strong> and features an advanced <strong>8-bank internal architecture</strong>, enabling parallel operations and improved data throughput. It utilizes a <strong>double data rate (DDR3L) interface</strong>, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency.<br><br>Operating at a nominal voltage of <strong>1.35V</strong>, the NT5CC256M16ER-EKI supports data rates up to <strong>1866 Mbps</strong>, making it suitable for high-speed and energy-efficient system designs. Its low-voltage operation reduces overall power consumption compared to standard DDR3 memory solutions.<br><br>The device supports key features such as <strong>programmable burst lengths, auto-refresh, self-refresh, and power-down modes</strong>, ensuring reliable data integrity and optimized power management across various operating conditions.<br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the NT5CC256M16ER-EKI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance.<br><br>The <strong>NT5CC256M16ER-EKI</strong> is widely used in <strong>industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms</strong> where high-speed volatile memory and low power operation are required.
NT5CC256M16ER-EKI

Description: The NT5CC256M16ER-EKI is a high-performance 4Gbit DDR3L synchrono ...
Package: T&R | MOQ: 2000 | MPQ: 2000













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