NT5DS32M16ES-5T
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| Part Number | NT5DS32M16ES-5T |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5DS32M16ES-5T is a high-performance 512Mbit DDR synchronous DRAM developed by Nanya Technology, designed for embedded systems, industrial electronics, and high-speed memory applications requiring reliable bandwidth and stable operation. The device is organized as 32M x 16 bits and features an advanced 4-bank internal architecture, enabling concurrent operations and improved data throughput. It utilizes a double data rate (DDR) interface, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. Operating at a nominal voltage of 2.5V, the NT5DS32M16ES-5T supports data rates up to 400 Mbps (DDR-400) with clock speeds around 200 MHz, making it suitable for high-speed applications while maintaining stable power consumption. The device supports key features such as programmable burst lengths, auto-refresh, and self-refresh, ensuring reliable data integrity and efficient memory operation across various system conditions. Packaged in a compact 66-pin TSOP-II surface-mount form factor, the NT5DS32M16ES-5T is optimized for space-efficient PCB layouts while maintaining reliable signal integrity and thermal performance. The NT5DS32M16ES-5T is widely used in industrial controllers, networking equipment, embedded systems, consumer electronics, and legacy computing platforms where stable DDR memory performance and cost-effective solutions are required. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | TSOP-II 66 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NT5DS32M16ES-5T
NT5DS32M16ES-5T