MT47H256M16JT-25E
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| Part Number | MT47H256M16JT-25E |
|---|---|
| Manufacturer |
 Micron
|
| Description | The MT47H256M16JT-25E is a high-performance 4Gbit DDR2 synchronous DRAM (SDRAM) developed by Micron Technology, designed for embedded systems, networking equipment, and industrial applications requiring reliable high-speed memory. It features a memory organization of 256M × 16 bits, enabling efficient parallel data processing and high-density storage. The device utilizes a double data rate (DDR2) architecture with 4n prefetch, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth compared to standard SDRAM. It supports clock frequencies up to approximately 400 MHz (800 MT/s data rate), ensuring stable performance in demanding applications. Built with an advanced 8-bank internal architecture, the MT47H256M16JT-25E enables concurrent memory operations and improved system throughput. It supports programmable CAS latency, burst length (4, 8), and on-die termination (ODT), providing flexibility for modern memory controller designs. The device operates within a supply voltage range of 1.7V to 1.9V (typ. 1.8V), ensuring a balance between performance and power efficiency, and is fully compliant with standard DDR2 memory interfaces. Packaged in a compact 84-ball FBGA surface-mount form factor, the MT47H256M16JT-25E is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. The MT47H256M16JT-25E is widely used in applications such as embedded systems, industrial automation, networking devices, telecommunications equipment, and consumer electronics, where stable and cost-effective high-speed volatile memory is required. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA 84 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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MT47H256M16JT-25E
MT47H256M16JT-25E