The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
| Part Number | NT5CB64M16GP-EK |
|---|---|
| Manufacturer |
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| Description | The NT5CB64M16GP-EK is a high-performance 1Gbit DDR3 synchronous DRAM developed by Nanya Technology, designed for embedded systems, industrial electronics, and computing applications requiring reliable memory bandwidth and stable performance. The device is organized as 64M x 16 bits and features an advanced 8-bank internal architecture, enabling parallel memory operations and improved data throughput. It utilizes a double data rate (DDR3) interface, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. Operating at a nominal voltage of 1.5V, the NT5CB64M16GP-EK supports data rates up to 1866 Mbps with a clock frequency around 933 MHz, making it suitable for high-speed applications while maintaining balanced power consumption. The device includes key features such as programmable burst lengths, auto-refresh, self-refresh, and power-down modes, ensuring reliable data integrity and efficient power management across various operating conditions. Packaged in a compact 96-ball FBGA surface-mount form factor, the NT5CB64M16GP-EK is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance. The NT5CB64M16GP-EK is widely used in embedded systems, networking equipment, industrial controllers, consumer electronics, and computing platforms where stable and high-speed volatile memory is required. |
| Product Group | SDRAM |
| MOQ | 2000 pcs |
| SPQ | 2000 pcs |
| Figure/Case | FBGA-96 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |