All Products SDRAM

H5TC4G63CFR-PBA / The H5TC4G63CFR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial electronics, and high-speed computing applications. It features a memory organization of 256M × 16 bits, enabling efficient parallel data transfer and high bandwidth performance.<br><br>The device operates using DDR3L technology (low-voltage DDR3) with a typical supply voltage of 1.35V, providing reduced power consumption while maintaining high-speed performance. It supports data rates up to approximately 1600 Mbps (800 MHz clock), making it suitable for applications requiring fast and reliable memory access.<br><br>Built on an advanced 8-bank architecture with 8n prefetch, the H5TC4G63CFR-PBA enables efficient concurrent memory operations and improved system throughput. It supports key features such as programmable CAS latency (CL5–CL13), burst lengths (4/8), auto-refresh, and self-refresh, ensuring stable and flexible memory management.<br><br>The device incorporates a fully synchronous interface with differential clocking (CK/CK#) and data strobes (DQS), ensuring signal integrity and reliable operation at high frequencies. It also includes advanced functions such as on-chip DLL alignment, data masking (DM), and on-die termination (ODT), improving performance and simplifying high-speed PCB design.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC4G63CFR-PBA is optimized for high-density PCB layouts and space-constrained applications. It operates across commercial and industrial temperature ranges (up to +95°C), ensuring reliable performance in demanding environments.<br><br>The H5TC4G63CFR-PBA is widely used in applications such as embedded systems, networking equipment, industrial automation, consumer electronics, telecommunications, and FPGA/SoC memory expansion, where high-speed and low-power volatile memory is essential.
H5TC4G63CFR-PBA

Description: The H5TC4G63CFR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 1000 | MPQ: 1000

IS46LR16320C-6BLA1 / The IS46LR16320C-6BLA1 is a high-performance 512Mbit Mobile DDR SDRAM (LPDDR) developed by Integrated Silicon Solution Inc. (ISSI), designed for low-power, high-speed embedded applications. It features a memory organization of 32M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>This device operates at clock frequencies up to 166 MHz with a fast access time of approximately 5.5 ns, providing reliable performance for memory-intensive applications. It utilizes a double data rate (DDR) architecture, transferring data on both rising and falling edges of the clock to maximize throughput.<br><br>Designed for low-power systems, the IS46LR16320C-6BLA1 operates within a supply voltage range of 1.7V to 1.95V (typ. 1.8V), making it ideal for battery-powered and portable devices. It incorporates power-saving features and efficient memory management functions to reduce overall system consumption.<br><br> Internally, the memory is organized into 4 banks, allowing concurrent operations and improved data throughput. It supports advanced features such as burst read/write operations, programmable CAS latency, auto-refresh, self-refresh, and data masking, ensuring stable and efficient performance in dynamic environments.<br><br>The device uses a parallel interface with 16-bit data bus, and includes differential clocking and data strobe (DQS) signals to ensure signal integrity at high speeds. It is housed in a compact 60-ball TFBGA package, optimized for high-density PCB layouts and space-constrained designs.<br><br>With an operating temperature range of -40°C to +85°C, the IS46LR16320C-6BLA1 is suitable for industrial and automotive-grade applications.<br><br>The IS46LR16320C-6BLA1 is widely used in applications such as embedded systems, industrial automation, portable devices, networking equipment, automotive electronics, and IoT systems, where low power consumption and reliable high-speed volatile memory are essential.
IS46LR16320C-6BLA1

Description: The IS46LR16320C-6BLA1 is a high-performance 512Mbit Mobile DDR SDRAM (LPDDR) developed by ...
Package: | MOQ: | MPQ:

H5TC4G63AFR-PBA / The H5TC4G63AFR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial electronics, and high-speed computing applications. It features a memory organization of 256M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device utilizes DDR3L (low-voltage DDR3) technology, operating at a typical supply voltage of 1.35V, which significantly reduces power consumption compared to standard DDR3 memory while maintaining high-speed performance. It supports data rates up to approximately 1600 Mbps (800 MHz clock), making it suitable for demanding applications requiring fast and reliable memory access.<br><br>Built on an advanced 8-bank architecture with 8n prefetch, the H5TC4G63AFR-PBA enables efficient concurrent operations and improved memory throughput. It supports key features such as programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh, ensuring stable and efficient memory management in dynamic systems.<br><br>The device incorporates a fully synchronous interface with differential clocking and data strobe (DQS), ensuring signal integrity and reliable operation at high frequencies. Additional features such as on-die termination (ODT) and calibration functions help simplify high-speed PCB design and improve system stability.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC4G63AFR-PBA is optimized for high-density PCB layouts and space-constrained applications.<br><br>The H5TC4G63AFR-PBA is widely used in applications such as embedded systems, networking equipment, industrial automation, consumer electronics, communication devices, and FPGA/SoC memory expansion, where high-speed and low-power volatile memory is essential.
H5TC4G63AFR-PBA

Description: The H5TC4G63AFR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 250 | MPQ: 250

H5TC2G63FFR-PBA / The H5TC2G63FFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial applications, and high-speed computing platforms. It features a memory organization of 128M × 16 bits, enabling efficient parallel data transfer and high bandwidth performance.<br><br>The device operates using DDR3L (low-voltage DDR3) technology with a typical supply voltage of 1.35V, offering reduced power consumption while maintaining high-speed operation. It supports data rates up to 1600 Mbps, making it suitable for demanding applications requiring fast and reliable memory access.<br><br>Built on an advanced multi-bank architecture (8 banks) with 8n prefetch, the H5TC2G63FFR-PBA enables efficient parallel operations and improved memory throughput. It supports key features such as burst read/write operations, programmable CAS latency, auto-refresh, and self-refresh, ensuring stable and efficient memory management.<br><br>The device utilizes a fully synchronous interface with differential clocking and data strobe (DQS), ensuring signal integrity and reliable operation at high frequencies. Additional features such as on-die termination (ODT), ZQ calibration, and DLL alignment enhance performance and simplify high-speed PCB design.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC2G63FFR-PBA is optimized for high-density layouts and space-constrained applications. It is widely used in applications such as embedded systems, networking equipment, industrial automation, consumer electronics, and communication devices, where high-speed, low-power volatile memory is essential.
H5TC2G63FFR-PBA

Description: The H5TC2G63FFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 1000 | MPQ: 1000

H5TC2G63EFR-PBA / The H5TC2G63EFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial electronics, and high-speed computing applications. It features a memory organization of 128M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device utilizes DDR3L (low-voltage DDR3) technology, operating at a typical supply voltage of 1.35V, which significantly reduces power consumption compared to standard DDR3 memory while maintaining high-speed performance. It supports data rates up to approximately 1600 Mbps, making it suitable for demanding applications requiring fast and reliable memory access.<br><br>Built on an advanced 8-bank architecture with 8n prefetch, the H5TC2G63EFR-PBA allows efficient concurrent operations and improved memory throughput. It supports key features such as programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh, ensuring stable and efficient memory management in dynamic systems.<br><br>The device incorporates a fully synchronous interface with differential clocking and data strobe (DQS), ensuring signal integrity and reliable operation at high frequencies. Additional features such as on-die termination (ODT), ZQ calibration, and DLL alignment further enhance performance and simplify high-speed PCB design.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC2G63EFR-PBA is optimized for high-density layouts and space-constrained applications. It typically operates across commercial and industrial temperature ranges, making it suitable for robust environments.<br><br>The H5TC2G63EFR-PBA is widely used in applications such as embedded systems, industrial automation, networking equipment, consumer electronics, communication devices, and FPGA/SoC memory expansion, where high-speed, low-power volatile memory is essential.
H5TC2G63EFR-PBA

Description: The H5TC2G63EFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 1000 | MPQ: 1000

H5TC2G63AFR-PBA / The H5TC2G63AFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial applications, and high-speed computing platforms. It features a memory organization of 128M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device operates using DDR3L technology with a typical supply voltage of 1.35V, providing improved power efficiency compared to standard DDR3 memory while maintaining high-speed performance. It supports data rates up to 1600 Mbps, making it suitable for applications requiring fast memory access and high throughput.<br><br>Built on an advanced multi-bank architecture (typically 8 banks), the H5TC2G63AFR-PBA enables concurrent memory operations and optimized bandwidth. It supports features such as burst read/write operations, programmable CAS latency, auto-refresh, and self-refresh, ensuring reliable and efficient memory management in dynamic systems.<br><br>The device utilizes a fully synchronous interface with differential clocking and data strobes (DQS), ensuring signal integrity and stable operation at high frequencies. Additional features such as on-die termination (ODT), ZQ calibration, and DLL alignment enhance performance and simplify system design in high-speed environments.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC2G63AFR-PBA is optimized for high-density PCB layouts and space-constrained applications. It is widely used in applications such as embedded systems, networking equipment, industrial automation, consumer electronics, and communication devices, where reliable high-speed volatile memory is essential.
H5TC2G63AFR-PBA

Description: The H5TC2G63AFR-PBA is a high-performance 2Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 1000 | MPQ: 1000

H5TC1G63EFR-PBA / The H5TC1G63EFR-PBA is a high-performance 1Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for high-speed embedded and computing applications. It features a memory organization of 64M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device operates using DDR3L technology (low voltage DDR3) with a typical supply voltage of 1.35V, offering improved power efficiency compared to standard DDR3 memory while maintaining high-speed performance. It supports clock frequencies up to approximately 800 MHz (1600 Mbps data rate), making it suitable for demanding applications requiring fast data access.<br><br>Built on a multi-bank architecture (8 banks) with page burst access, the H5TC1G63EFR-PBA enables efficient memory operations and improved throughput. It supports advanced features such as auto-refresh, self-refresh, burst read/write operations, and programmable latency, ensuring reliable performance in dynamic memory environments.<br><br>The device utilizes a fully synchronous interface with differential clocking and data strobes, ensuring signal integrity and stable high-speed operation. It also includes features such as on-die termination (ODT), ZQ calibration, and data masking, which enhance reliability and simplify system design in high-frequency applications.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC1G63EFR-PBA is optimized for high-density PCB layouts and space-constrained designs. It is widely used in applications such as embedded systems, networking equipment, industrial controllers, consumer electronics, and communication systems, where high-speed volatile memory and low power consumption are essential.
H5TC1G63EFR-PBA

Description: The H5TC1G63EFR-PBA is a high-performance 1Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C8M16SA-7TCN / The AS4C8M16SA-7TCN is a high-speed 128Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 8M × 16 bits, providing efficient parallel data access for processors, FPGAs, and SoC-based systems.<br><br>The device operates at a maximum clock frequency of 143 MHz with an access time of approximately 5.4 ns, enabling fast data transfer and low-latency performance in memory-intensive applications.<br><br>Built on a fully synchronous architecture, all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable system behavior. Internally, the SDRAM is organized into 4 banks (2M × 16 per bank), allowing concurrent operations and improved bandwidth efficiency.<br><br>The AS4C8M16SA-7TCN supports burst-oriented read and write operations, programmable burst lengths, and selectable CAS latency, enabling flexible optimization for different system requirements. It also includes advanced features such as auto-refresh, self-refresh, and power-down modes, ensuring data integrity while reducing system power consumption.<br><br>Operating within a supply voltage range of 3.0V to 3.6V (typ. 3.3V), the device is compatible with standard embedded and digital systems. It is housed in a compact 54-pin TSOP-II package, making it suitable for space-constrained PCB designs.<br><br>The AS4C8M16SA-7TCN is widely used in applications such as embedded systems, industrial automation, networking equipment, consumer electronics, display controllers, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C8M16SA-7TCN

Description: The AS4C8M16SA-7TCN is a high-speed 128Mbit synchronous DRAM (SDRAM) developed by Alliance ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C64M16SA-7TCN / The AS4C64M16SA-7TCN is a high-density 1Gbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications requiring large-capacity volatile memory. It features a memory organization of 64M × 16 bits and a parallel interface for efficient high-speed data transfer.<br><br>The device operates at a maximum clock frequency of approximately 143 MHz with a typical access time of ~5.4 ns, enabling reliable performance in memory-intensive applications.<br><br>Built on a fully synchronous architecture, all inputs and outputs are registered on the clock edge, ensuring stable timing and predictable system behavior. Internally, the SDRAM utilizes a multi-bank (typically 4-bank) structure, allowing interleaved access and improved bandwidth efficiency.<br><br>The AS4C64M16SA-7TCN supports advanced memory features including programmable burst lengths (1, 2, 4, 8, full page), CAS latency (CL2/CL3), and sequential/interleaved burst modes, enabling flexible optimization for different system designs. It also includes auto-refresh, self-refresh, and power-down modes, ensuring data integrity while reducing overall system power consumption.<br><br>Operating within a supply voltage range of 3.0V to 3.6V (typ. 3.3V), the device is compatible with standard embedded and digital systems. It is housed in a compact 54-pin TSOP-II package, making it suitable for space-constrained PCB layouts.<br><br>The AS4C64M16SA-7TCN is widely used in applications such as embedded systems, industrial automation, networking equipment, display controllers, multimedia systems, and FPGA/SoC memory expansion, where reliable, high-speed, and high-capacity volatile memory is required.
AS4C64M16SA-7TCN

Description: The AS4C64M16SA-7TCN is a high-density 1Gbit synchronous DRAM (SDRAM) developed by Allianc ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C64M16SA-6TCN / The AS4C64M16SA-6TCN is a high-density 1Gbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications requiring large volatile memory capacity. It features a memory organization of 64M × 16 bits, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device supports clock frequencies up to approximately 166 MHz, delivering fast data throughput and reliable performance for memory-intensive applications such as networking equipment, industrial control systems, and FPGA-based designs. It utilizes a fully synchronous architecture, where all inputs and outputs are registered on the clock edge, ensuring stable timing and predictable system behavior.<br><br>Internally, the SDRAM is organized into multiple banks (typically 4-bank architecture), allowing interleaved operations and improved memory efficiency. It supports burst read/write operations, programmable burst lengths, and selectable CAS latency, enabling flexible optimization for various system requirements.<br><br>Operating within a supply voltage range of 3.0V to 3.6V (typ. 3.3V), the AS4C64M16SA-6TCN is compatible with standard logic systems. It includes advanced features such as auto-refresh, self-refresh, and power-down modes, ensuring data integrity while reducing overall system power consumption.<br><br>With an access time in the low nanosecond range (~5 ns class) and high-speed synchronous operation, the device is well-suited for demanding real-time processing applications. It is housed in a compact 54-pin TSOP-II package, making it ideal for space-constrained PCB designs.<br><br>The AS4C64M16SA-6TCN is widely used in applications such as embedded systems, industrial automation, networking devices, multimedia systems, display controllers, and FPGA/SoC memory expansion, where high-capacity and high-speed volatile memory is essential.
AS4C64M16SA-6TCN

Description: The AS4C64M16SA-6TCN is a high-density 1Gbit synchronous DRAM (SDRAM) developed by Allianc ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C4M16SA-7TCN / The AS4C4M16SA-7TCN is a high-speed 64Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 4M × 16 bits, enabling efficient parallel data access for processors, FPGAs, and SoC-based platforms.<br><br>The device operates at a maximum clock frequency of 143 MHz with an access time of approximately 5.4 ns, delivering reliable high-speed performance for buffering and real-time data processing applications.<br><br>Built on a fully synchronous architecture, all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable operation. Internally, the SDRAM is organized into 4 banks, allowing concurrent operations and improved memory bandwidth.<br><br>The AS4C4M16SA-7TCN supports advanced features such as programmable burst lengths (1, 2, 4, 8, full page), CAS latency (CL2/CL3), and sequential/interleaved burst modes, enabling flexible system optimization. It also includes auto-refresh, self-refresh, and power-down modes, ensuring data integrity and reducing system power consumption.<br><br>Operating within a supply voltage range of 3.0V to 3.6V (typ. 3.3V), the device is compatible with standard logic systems and embedded designs.<br><br>Housed in a compact 54-pin TSOP-II surface-mount package, the AS4C4M16SA-7TCN is ideal for space-constrained PCB layouts. It operates over a commercial temperature range of 0°C to +70°C, ensuring stable performance in typical environments.<br><br>The AS4C4M16SA-7TCN is widely used in applications such as embedded systems, industrial controllers, networking equipment, display systems, consumer electronics, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C4M16SA-7TCN

Description: The AS4C4M16SA-7TCN is a high-speed 64Mbit synchronous DRAM (SDRAM) developed by Alliance ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C32M16SA-7TCN / The AS4C32M16SA-7TCN is a high-performance 512Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-speed digital applications. It features a memory organization of 32M × 16 bits and utilizes a parallel interface for efficient high-speed data access.<br><br>The device operates at a maximum clock frequency of approximately 143 MHz with a fast access time of around 5.4 ns, delivering reliable performance for buffering, data storage, and real-time processing applications.<br><br>Internally, the SDRAM is organized into 4 banks, allowing concurrent operations and improved memory bandwidth. It supports burst read/write operations, programmable burst lengths, and CAS latency configurations, enabling flexible optimization for different system requirements.<br><br>Operating within a supply voltage range of 3.0V to 3.6V, the AS4C32M16SA-7TCN is compatible with standard 3.3V systems. It also includes key features such as auto-refresh, self-refresh, and power-down modes, helping maintain data integrity while reducing system power consumption.<br><br>The device is housed in a compact 54-pin TSOP-II surface-mount package, making it suitable for space-constrained PCB designs. It operates over a commercial temperature range (0°C to +70°C), ensuring stable performance in typical environments.<br><br>The AS4C32M16SA-7TCN is widely used in applications such as embedded systems, industrial automation, networking equipment, display systems, consumer electronics, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C32M16SA-7TCN

Description: The AS4C32M16SA-7TCN is a high-performance 512Mbit synchronous DRAM (SDRAM) developed by A ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C32M16SA-6TCN / The AS4C32M16SA-6TCN is a high-performance 512Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-speed digital applications. It features a memory organization of 32M × 16 bits and utilizes a parallel interface for fast and efficient data access.<br><br>This device supports high-speed operation with clock frequencies up to 166 MHz (speed grade dependent), enabling high bandwidth and low-latency performance in memory-intensive systems. It operates using a fully synchronous architecture, where all inputs and outputs are referenced to the clock signal, ensuring stable and predictable timing behavior.<br><br>Internally, the SDRAM is organized into 4 banks, allowing interleaved access and improved data throughput. It supports burst read/write operations, programmable burst lengths (1, 2, 4, 8, full page), and selectable CAS latency (CL2/CL3), providing flexibility for different system designs.<br><br>The AS4C32M16SA-6TCN operates within a supply voltage range of 3.0V to 3.6V (typ. 3.3V) and features an access time of approximately 5.4 ns, ensuring fast response in high-speed applications. It also includes advanced memory management features such as auto-refresh, self-refresh, power-down modes, and data masking, helping to maintain data integrity and reduce power consumption.<br><br>Packaged in a compact 54-pin TSOP-II surface-mount form factor, the device is well-suited for space-constrained PCB designs. It typically operates over a commercial temperature range of 0°C to +70°C, ensuring reliable performance in standard environments.<br><br>The AS4C32M16SA-6TCN is widely used in applications such as embedded systems, industrial automation, networking equipment, consumer electronics, display systems, and FPGA/SoC memory expansion, where reliable, high-speed volatile memory is required.
AS4C32M16SA-6TCN

Description: The AS4C32M16SA-6TCN is a high-performance 512Mbit synchronous DRAM (SDRAM) developed by A ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C2M32SA-7TCN / The AS4C2M32SA-7TCN is a high-speed 64Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 2M × 32 bits, providing efficient parallel data access for processors, FPGAs, and SoC platforms.<br><br>The device operates at a maximum clock frequency of 143 MHz with an access time of approximately 5.5 ns, enabling fast data transfer and low-latency performance in memory-intensive systems.<br><br>Built on a fully synchronous architecture, all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable operation. Internally, the SDRAM is organized into four banks (quad-bank architecture), allowing concurrent operations and improved memory bandwidth.<br><br>The AS4C2M32SA-7TCN supports advanced memory features such as programmable burst lengths (1, 2, 4, 8, or full page), CAS latency (CL2/CL3), and sequential/interleaved burst modes, enabling flexible optimization for different system requirements.<br><br>Operating within a supply voltage range of 3.0V to 3.6V (typ. 3.3V), the device is compatible with standard logic systems. It also includes auto-refresh and self-refresh modes, reducing system overhead and maintaining data integrity during idle periods.<br><br>Packaged in a compact 86-pin TSOP-II surface-mount form factor, the AS4C2M32SA-7TCN is suitable for space-constrained PCB designs. It operates over a commercial temperature range of 0°C to +70°C, ensuring stable performance in typical environments.<br><br>The AS4C2M32SA-7TCN is widely used in applications such as embedded systems, industrial controllers, networking equipment, display systems, consumer electronics, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C2M32SA-7TCN

Description: The AS4C2M32SA-7TCN is a high-speed 64Mbit synchronous DRAM (SDRAM) developed by Alliance ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C16M8SA-7TCN / The AS4C16M8SA-7TCN is a high-speed 128Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 16M × 8 bits, enabling efficient parallel data access for microprocessors, FPGAs, and SoC-based systems.<br><br>The device operates at a maximum clock frequency of approximately 143 MHz with an access time around 5.4 ns, providing fast data throughput and low latency performance suitable for memory-intensive applications.<br><br>Built on a fully synchronous architecture, all inputs and outputs are registered on the clock edge, ensuring stable timing and predictable system behavior. The internal structure consists of multiple banks (typically 4 banks), allowing concurrent operations and improved bandwidth utilization.<br><br>The AS4C16M8SA-7TCN supports burst read and write operations, programmable burst lengths (1, 2, 4, 8, or full page), and selectable CAS latency (CL2/CL3), providing flexibility for different system requirements. It also includes advanced features such as auto-refresh, self-refresh, and power-down modes, helping reduce system power consumption while maintaining data integrity.<br><br>Operating within a supply voltage range of 3.0V to 3.6V, the device is compatible with standard 3.3V systems. It uses a parallel interface (LVTTL compatible), making it suitable for high-speed communication with digital processing units.<br><br>Packaged in a compact 54-pin TSOP-II surface-mount form factor, the AS4C16M8SA-7TCN is optimized for space-constrained PCB designs. It operates over a commercial temperature range of 0°C to +70°C, ensuring reliable performance in typical environments.<br><br>The AS4C16M8SA-7TCN is widely used in applications such as embedded systems, industrial controllers, networking equipment, display systems, consumer electronics, and FPGA/SoC memory expansion, where reliable, high-speed volatile memory is required.
AS4C16M8SA-7TCN

Description: The AS4C16M8SA-7TCN is a high-speed 128Mbit synchronous DRAM (SDRAM) developed by Alliance ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C16M16SA-7TCN / The AS4C16M16SA-6TCN is a high-speed 256Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 16M × 16 bits and utilizes a parallel interface for fast data access.<br><br>The device operates at clock frequencies up to 166 MHz with a fast access time of approximately 5 ns, enabling high-speed data transfer and low latency performance in memory-intensive systems.<br><br>Internally, the SDRAM is organized into 4 banks, allowing concurrent operations and improved bandwidth. It supports burst-oriented read and write operations, where data is accessed sequentially after an initial address is specified, optimizing throughput for high-speed applications.<br><br>Operating within a supply voltage range of 3.0V to 3.6V, the AS4C16M16SA-6TCN is compatible with standard 3.3V systems. It also supports programmable CAS latency (CL2/CL3), synchronous clock operation, and efficient pipelined architecture for reliable performance.<br><br>Packaged in a 54-pin TSOP-II surface-mount form factor, the device is optimized for space-constrained PCB designs and cost-effective embedded solutions. It operates within a commercial temperature range of 0°C to +70°C, ensuring stable performance in typical environments.<br><br>The AS4C16M16SA-6TCN is widely used in applications such as embedded systems, industrial controllers, networking equipment, consumer electronics, display systems, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C16M16SA-7TCN

Description: The AS4C16M16SA-6TCN is a high-speed 256Mbit synchronous DRAM (SDRAM) developed by Allianc ...
Package: T&R | MOQ: 1000 | MPQ: 1000

AS4C16M16SA-6TCN / The AS4C16M16SA-6TCN is a high-speed 256Mbit synchronous DRAM (SDRAM) developed by Alliance Memory, designed for embedded systems and high-performance digital applications. It features a memory organization of 16M × 16 bits and utilizes a parallel interface for fast data access.<br><br>The device operates at clock frequencies up to 166 MHz with a fast access time of approximately 5 ns, enabling high-speed data transfer and low latency performance in memory-intensive systems.<br><br>Internally, the SDRAM is organized into 4 banks, allowing concurrent operations and improved bandwidth. It supports burst-oriented read and write operations, where data is accessed sequentially after an initial address is specified, optimizing throughput for high-speed applications.<br><br>Operating within a supply voltage range of 3.0V to 3.6V, the AS4C16M16SA-6TCN is compatible with standard 3.3V systems. It also supports programmable CAS latency (CL2/CL3), synchronous clock operation, and efficient pipelined architecture for reliable performance.<br><br>Packaged in a 54-pin TSOP-II surface-mount form factor, the device is optimized for space-constrained PCB designs and cost-effective embedded solutions. It operates within a commercial temperature range of 0°C to +70°C, ensuring stable performance in typical environments.<br><br>The AS4C16M16SA-6TCN is widely used in applications such as embedded systems, industrial controllers, networking equipment, consumer electronics, display systems, and FPGA/SoC memory expansion, where reliable and high-speed volatile memory is required.
AS4C16M16SA-6TCN

Description: The AS4C16M16SA-6TCN is a high-speed 256Mbit synchronous DRAM (SDRAM) developed by Allianc ...
Package: T&R | MOQ: 1000 | MPQ: 1000

W66DP2RQQAGJ / The W66DP2RQQAGJ is a high-performance 8Gbit LPDDR4X SDRAM memory IC developed by Winbond Electronics, designed for advanced embedded and mobile applications requiring high bandwidth and low power consumption. It features a memory organization of 256M × 32 bits, enabling efficient handling of large data streams in modern digital systems.<br><br>This device supports LPDDR4X technology with clock frequencies up to 1.866 GHz, delivering high-speed data transfer suitable for applications such as industrial computing, networking systems, and high-performance embedded platforms.<br><br>Operating with dual supply voltages of approximately 1.06–1.17V (core) and 1.7–1.95V (I/O), the W66DP2RQQAGJ provides improved energy efficiency compared to previous memory generations while maintaining stable high-speed operation.<br><br>The device uses a LVSTL_06 interface and advanced DDR architecture, offering fast access time (~3.5 ns) and efficient write cycle performance (~18 ns), ensuring responsiveness in time-critical applications.<br><br>With an operating temperature range of -40°C to +105°C, the W66DP2RQQAGJ is suitable for industrial and automotive-grade environments. It is packaged in a compact 200-ball TFBGA form factor, enabling high-density PCB layouts and space-constrained designs.<br><br>The W66DP2RQQAGJ is widely used in applications such as embedded systems, industrial automation, networking equipment, AI/edge computing devices, automotive electronics, and high-performance consumer electronics, where high-speed volatile memory and low power consumption are critical.<br><br>Equivalent Parts: K4F6E304HB-MGCJ, K4F6E3S4HM-MGCJ, K4F6E304HB-MGCH, MT53E256M32D2DS-046, MT53E256M32D2NP-046, MT53E256M32D1DS-046, H9HKNNN8KUMLHR-NME, H9HKNNN8KUMLXR-NME, H9HKNNN8KUMLHR-NEH, NT6AN256T32AV-J1, NT6AN256T32CM-J1, W66DP2RQQAGJG, W66CP6RBQAFJ
W66DP2RQQAGJ

Description: The W66DP2RQQAGJ is a high-performance 8Gbit LPDDR4X SDRAM memory IC developed by Winbond ...
Package: TRAY | MOQ: 144 | MPQ: 144

W664GG6RB-06 / The W664GG6RB-06 is a high-performance 4Gbit DDR4 SDRAM memory IC developed by Winbond Electronics, designed for high-speed data processing and embedded system applications. It features a memory organization of 256M × 16 bits, providing efficient data storage and transfer for modern digital systems.<br><br>The device supports DDR4 technology with data rates up to 3200 Mbps (1600 MHz clock), enabling high bandwidth and fast data access suitable for demanding applications such as industrial controllers, networking devices, and advanced embedded platforms.<br><br>Operating with a low supply voltage of approximately 1.2V (1.14V – 1.26V), the W664GG6RB-06 offers improved energy efficiency compared to previous DDR generations while maintaining high performance. It incorporates an 8-bank architecture with 8n prefetch, ensuring optimized memory throughput and efficient parallel access.<br><br>The device features a POD_12 interface, differential clocking, and advanced DDR4 functions such as on-die termination (ODT), data bus inversion, ZQ calibration, and programmable latency control, ensuring signal integrity and reliable operation in high-speed environments.<br><br>With a typical access time of ~18 ns and fast write cycles (~15 ns), the memory is suitable for latency-sensitive applications. It operates over a temperature range of 0°C to +95°C, making it suitable for commercial and industrial-grade systems.<br><br>Packaged in a compact 96-ball VFBGA form factor, the W664GG6RB-06 is optimized for high-density PCB designs and space-constrained applications. It is widely used in embedded systems, industrial automation, networking equipment, consumer electronics, and high-performance computing modules where fast and reliable volatile memory is required.<br><br> Equivalent: NT5AD256M16E4-JR, NT5AD256M16E4-JR TR, MT40A256M16LY-062E, MT40A256M16GE-062E, MT40A256M16TB-062E, K4A4G165WE-BCRC, K4A4G165WF-BCTD, K4A4G165WB-BCRC, H5AN4G6NBJR-UHC, H5AN4G6NAFR-UHC, H5AN4G6NBMR-UHC
W664GG6RB-06

Description: The W664GG6RB-06 is a high-performance 4Gbit DDR4 SDRAM memory IC developed by Winbond Ele ...
Package: TRAY | MOQ: 198 | MPQ: 198

W634GU6RB-09 / The W634GU6RB-09 is a high-performance 4Gbit DDR3L SDRAM memory IC developed by Winbond Electronics, designed for embedded systems and high-speed data processing applications. It features a memory organization of 256M × 16 bits, enabling efficient handling of large data streams in modern digital systems.<br><br>The device operates at clock frequencies up to 1.066 GHz, delivering high bandwidth suitable for demanding applications such as industrial controllers, networking equipment, and multimedia systems. It utilizes a parallel interface and DDR3L architecture with 8n prefetch, allowing efficient data transfer and improved system performance.<br><br>Operating at a low supply voltage range of 1.283V to 1.45V (typ. 1.35V), the W634GU6RB-09 reduces power consumption compared to standard DDR3 memory while maintaining high-speed operation. It offers an access time of approximately 20 ns and fast write cycles (~15 ns), making it suitable for time-critical applications.<br><br>The device is housed in a compact 96-ball VFBGA package, optimized for high-density PCB layouts and space-constrained designs. It supports industrial operating conditions (up to +95°C), ensuring reliable performance in harsh environments.<br><br>The W634GU6RB-09 is widely used in applications such as embedded systems, industrial automation, networking devices, consumer electronics, and automotive electronics, where high-speed volatile memory and low power consumption are essential. <br><br> Equivalent Part: MT41K256M16TW-107, MT41K256M16HA-107, MT41K256M16LY-107, K4B4G1646E-BYK0, K4B4G1646D-BCK0, K4B4G1646Q-BYK0, H5TC4G63CFR-PBA, H5TC4G63AFR-PBA, H5TC4G63DJR-PBA, NT5CC256M16DP-DI, NT5CC256M16ER-DI, IS43TR16256BL-125KBL, IS43TR16256AL-125KBL, W634GU6RB-11, W634GU6RB09I/-09TR, W634GU6QB-09
W634GU6RB-09

Description: The W634GU6RB-09 is a high-performance 4Gbit DDR3L SDRAM memory IC developed by Winbond El ...
Package: TRAY | MOQ: 198 | MPQ: 198

W632GU6RB-11 / The W632GU6RB-11 is a high-performance 2Gbit DDR3L SDRAM memory IC developed by Winbond Electronics, designed for embedded systems and high-speed data processing applications. It features a memory organization of 128M × 16 bits, providing efficient data handling for modern processors and digital systems.<br><br>Operating at a clock frequency of up to 933 MHz, the device enables high-speed data transfer and supports bandwidth-intensive applications such as industrial control systems, networking equipment, and multimedia devices. The parallel memory interface ensures fast communication with microcontrollers, SoCs, and FPGA platforms.<br><br>The W632GU6RB-11 operates at a low supply voltage range of approximately 1.283V to 1.45V (DDR3L standard ~1.35V), reducing power consumption while maintaining stable performance. It provides an access time of around 20 ns and write cycle time of ~15 ns, making it suitable for time-critical operations.<br><br>With its 8-bank architecture and DDR3L technology, the device delivers high efficiency and improved data throughput compared to earlier memory generations. It also supports advanced DDR features such as burst operation, on-die termination, and high-speed clocking for signal integrity.<br><br>Packaged in a compact 96-ball VFBGA (7.5 × 13 mm) surface-mount format, the W632GU6RB-11 is optimized for high-density PCB designs.<br><br>This memory IC is widely used in applications such as embedded systems, industrial automation, networking devices, consumer electronics, and automotive electronics, where reliable, high-speed volatile memory is essential.<br><br> Equivalent Parts: MT41K128M16JT-125, MT41K128M16HA-125, MT41K128M16TW-125, K4B2G1646E-BCK0, K4B2G1646Q-BYK0, K4B2G1646D-BCK0, H5TC2G63FFR-PBA, H5TC2G63AFR-PBA, H5TC2G63EFR-PBA, NT5CC128M16DP-DI, NT5CC128M16JR-DI, IS43TR16128BL-125KBL, IS43TR16128AL-125KBL, AS4C128M16D3L-12BCN, W632GU6RB-09, W632GU6RB-12, W632GU6NB-11, W631GU6RB-11
W632GU6RB-11

Description: The W632GU6RB-11 is a high-performance 2Gbit DDR3L SDRAM memory IC developed by Winbond El ...
Package: TUBE | MOQ: 198 | MPQ: 198

W632GU6RB-09 / The W632GU6RB-09 is a high-performance 2Gbit DDR3L SDRAM memory IC developed by Winbond Electronics, designed for embedded systems and high-speed data processing applications. It features a memory organization of 128M × 16 bits and utilizes DDR3L technology for improved power efficiency and bandwidth.<br><br>Operating at speeds up to 1066 MHz clock frequency (DDR3-2133 data rate class), the device enables fast data transfer and efficient system performance. It incorporates an 8-bank architecture and 8n prefetch design, allowing high throughput and optimized memory access for modern processors.<br><br>The W632GU6RB-09 operates with a low supply voltage range of approximately 1.283V to 1.45V (DDR3L standard 1.35V), reducing power consumption compared to standard DDR3 while maintaining stable performance. It supports a parallel interface, making it suitable for high-speed communication with microcontrollers, SoCs, and FPGA platforms.<br><br>The device features typical access time of ~20 ns and fast write cycles (~15 ns), ensuring responsiveness in time-critical applications. Additional capabilities include on-die termination (ODT), ZQ calibration, programmable CAS latency, and differential clock/data strobe architecture for signal integrity and reliability.<br><br>Housed in a compact 96-ball VFBGA (7.5 × 13 mm) package, the W632GU6RB-09 is optimized for high-density PCB designs. It is widely used in applications such as embedded systems, industrial controllers, networking equipment, consumer electronics, and automotive systems, where high-speed volatile memory and low power consumption are essential.<br><br> Equivalent Parts: MT41K128M16JT-125, MT41K128M16HA-125, MT41K128M16TW-125, K4B2G1646E-BYK0, K4B2G1646Q-BYK0, K4B2G1646D-BCK0, H5TC2G63FFR-PBA, H5TC2G63AFR-PBA, H5TC2G63EFR-PBA, NT5CC128M16DP-DI, NT5CC128M16JR-DI, IS43TR16128BL-125KBL, IS43TR16128AL-125KBL, AS4C128M16D3L-12BCN, W632GU6RB-11, W632GU6RB-12, W632GU6RB09I, W632GU6RB09J, W632GU6NB-09
W632GU6RB-09

Description: The W632GU6RB-09 is a high-performance 2Gbit DDR3L SDRAM memory IC developed by Winbond El ...
Package: TUBE | MOQ: 198 | MPQ: 198

W634GU6RB-11 / The W634GU6RB-11 is a high-performance 4Gbit DDR3L SDRAM memory IC developed by Winbond Electronics, designed for embedded systems and high-speed data processing applications. It features a memory organization of 256M × 16 bits and operates using DDR3L technology for improved power efficiency and performance.<br><br>Operating at a clock frequency of up to 933 MHz (DDR3-1866 equivalent data rate), the device enables fast data transfer and efficient system operation. It supports a parallel memory interface and includes multiple internal banks, allowing high bandwidth and optimized memory access for modern embedded processors.<br><br>The W634GU6RB-11 operates at a low supply voltage range of approximately 1.283V to 1.45V, reducing power consumption compared to standard DDR3 memory while maintaining stable performance. It offers an access time of around 20 ns and supports fast write cycles (~15 ns), making it suitable for time-critical applications.<br><br>Packaged in a compact 96-ball VFBGA (7.5 × 13 mm) form factor, the device is optimized for space-constrained PCB designs and high-density memory layouts. It operates over a wide temperature range (up to industrial grade), ensuring reliable performance in demanding environments.<br><br>The W634GU6RB-11 is widely used in applications such as embedded systems, industrial controllers, networking equipment, consumer electronics, automotive systems, and high-performance computing modules, where fast, reliable volatile memory is required.<br><br> Equivalent Part: MT41K256M16TW-107, MT41K256M16HA-107, MT41K256M16LY-107, K4B4G1646E-BCK0, K4B4G1646Q-BYK0, K4B4G1646D-BCK0, H5TC4G63AFR-PBA, H5TC4G63CFR-PBA, H5TC4G63DJR-PBA, NT5CC256M16DP-DI, NT5CC256M16ER-DI, IS43TR16256BL-125KBL, IS43TR16256AL-125KBL, AS4C256M16D3L-12BCN, AS4C256M16D3L-12BCN, NDL46PFI-9MAT, W634GU6RB-09, W634GU6RB-12, W634GU6QB-11, W634GU8RB-11
W634GU6RB-11

Description: The W634GU6RB-11 is a high-performance 4Gbit DDR3L SDRAM memory IC developed by Winbond El ...
Package: TRAY | MOQ: 198 | MPQ: 198

MT47H64M16NF-25E:M / ​The MT47H64M16NF-25E:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module from Micron Technology Inc., offering a storage capacity of 1 gigabit (Gb). It is organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. This module operates with a supply voltage of 1.8V ±0.1V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 105°C, making it suitable for industrial applications. Key features include programmable CAS latency (CL) of 3, 4, or 5, selectable burst lengths of 4 or 8, on-die termination (ODT), and compliance with JEDEC clock jitter specifications. ​
MT47H64M16NF-25E:M

Description: ​The MT47H64M16NF-25E:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) modul ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E IT:M / ​The MT47H64M16NF-25E IT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Micron Technology Inc., offering a storage capacity of 1 gigabit (Gb). It is organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. The module operates with a supply voltage between 1.7V and 1.9V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 95°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E IT:M

Description: ​The MT47H64M16NF-25E IT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) mo ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E AIT:M / ​The MT47H64M16NF-25E AIT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module manufactured by Micron Technology Inc. It offers a storage capacity of 1 gigabit (Gb), organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. This module operates with a supply voltage between 1.7V and 1.9V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 95°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E AIT:M

Description: ​The MT47H64M16NF-25E AIT:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) m ...
Package: T&R | MOQ: 1368 | MPQ: 1368

MT47H64M16NF-25E AAT:M / ​The MT47H64M16NF-25E AAT:M is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Micron Technology Inc. It is organized as 64 million words by 16 bits (64M x 16), providing a data bus width of 16 bits. The module operates with a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds, ensuring rapid data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 105°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16NF-25E AAT:M

Description: ​The MT47H64M16NF-25E AAT:M is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access M ...
Package: TRAY | MOQ: 1368 | MPQ: 1368

MT47H64M16HR-3:H TR / ​The MT47H64M16HR-3:H TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module manufactured by Micron Technology Inc. It is organized as 64 million words by 16 bits (64M x 16), providing a data bus width of 16 bits. The module operates with a supply voltage between 1.7V and 1.9V and features an access time of 450 picoseconds, ensuring rapid data retrieval. It supports a maximum clock frequency of 333 MHz, corresponding to a data transfer rate of 666 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of 0°C to 85°C, making it suitable for commercial applications. The TR suffix indicates that the module is supplied in tape and reel packaging, facilitating automated assembly processes. ​
MT47H64M16HR-3:H TR

Description: ​The MT47H64M16HR-3:H TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: T&R | MOQ: 2000 | MPQ: 2000

IS46DR16640C-3DBLA1-TR / ​The IS46DR16640C-3DBLA1-TR is a 1-gigabit DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module produced by Integrated Silicon Solution Inc. (ISSI). It features a 64M x 16-bit organization, operating at a clock frequency of up to 333 MHz, which corresponds to a data transfer rate of 666 megabits per second per pin. The module requires a supply voltage between 1.7V and 1.9V and offers an access time of 450 picoseconds. It is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8mm x 12.5mm and is rated for an operating temperature range of -40°C to +95°C, making it suitable for automotive applications. The TR suffix indicates that the module is supplied in tape and reel packaging, ideal for automated assembly processes.​
IS46DR16640C-3DBLA1-TR

Description: ​The IS46DR16640C-3DBLA1-TR is a 1-gigabit DDR2 Synchronous Dynamic Random-Access Memory ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS46DR16640C-25DBLA2-TR / ​The IS46DR16640C-25DBLA2-TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 105°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640C-25DBLA2-TR

Description: ​The IS46DR16640C-25DBLA2-TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access ...
Package: T&R | MOQ: 2500 | MPQ: 2500

IS46DR16640C-25DBLA2 / ​The IS46DR16640C-25DBLA2 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 105°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640C-25DBLA2

Description: ​The IS46DR16640C-25DBLA2 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Mem ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS46DR16640B-25EBLA1 / ​The IS46DR16640B-25EBLA1 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS46DR16640B-25EBLA1

Description: ​The IS46DR16640B-25EBLA1 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Mem ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640C-25DBLI / ​The IS43DR16640C-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS43DR16640C-25DBLI

Description: ​The IS43DR16640C-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640C-25DBL / ​The IS43DR16640C-25DBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within a temperature range of 0°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
IS43DR16640C-25DBL

Description: ​The IS43DR16640C-25DBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memor ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640B-25EBL / The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, achieving data transfer rates up to 800 megabits per second per pin. The device functions within a supply voltage range of 1.7V to 1.9V and offers an access time of 450 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operation and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of 0°C to 70°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​Alternative P/N: IS43DR16640B-25EBLI
IS43DR16640B-25EBL

Description: The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory ( ...
Package: TRAY | MOQ: 418 | MPQ: 209

IS43DR16640B-25DBLI / ​The IS43DR16640B-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device functions within a supply voltage range of 1.7V to 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operation and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features comprise on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and automatic and controlled precharge commands. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within a temperature range of -40°C to +85°C, making it suitable for various industrial applications requiring high-speed and reliable memory solutions. ​
IS43DR16640B-25DBLI

Description: ​The IS43DR16640B-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memo ...
Package: TRAY | MOQ: 418 | MPQ: 209

EM68C16CWQG-25IH / ​The EM68C16CWQG-25IH is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Etron Technology, organized as 64 million words by 16 bits (64M x 16). Designed for high-performance applications, it operates at a clock frequency of 400 MHz, achieving data transfer rates up to 800 megabits per second per pin. The device operates within a supply voltage range of 1.7V to 1.9V and offers an access time of 400 picoseconds. It features a write cycle time of 15 nanoseconds and is housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm. With an operating temperature range from -40°C to +95°C, the EM68C16CWQG-25IH is suitable for various industrial applications requiring reliable and efficient memory solutions. ​
EM68C16CWQG-25IH

Description: ​The EM68C16CWQG-25IH is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory ...
Package: T&R | MOQ: 2500 | MPQ: 2500

AS4C64M16D2A-25BIN / ​The AS4C64M16D2A-25BIN is a high-speed, 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Alliance Memory, organized as 64 million words by 16 bits (64M x 16). Designed for high-performance applications, it features a double-data-rate architecture with an 8n prefetch, enabling data transfer rates up to 400 MHz. The device operates with a supply voltage range of 1.7V to 1.9V and supports fully synchronous operations with a differential clock (CK and CK#). It includes eight internal banks for concurrent operation and offers programmable CAS latencies of 3, 4, and 5. Additional features encompass bidirectional single/differential data strobes (DQS and DQS#), on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and automatic self-refresh with a refresh period of 7.8 µs. The AS4C64M16D2A-25BIN is housed in an 84-ball FBGA package and operates within an industrial temperature range of -40°C to 95°C, making it suitable for various applications requiring reliable and efficient memory solutions. T&R Part Number: ​AS4C64M16D2A-25BINTR
AS4C64M16D2A-25BIN

Description: ​The AS4C64M16D2A-25BIN is a high-speed, 1-gigabit (Gb) DDR2 Synchronous Dynamic Random- ...
Package: TRAY | MOQ: 418 | MPQ: 209

MT47H64M16HR-3 IT:H / ​The MT47H64M16HR-3 IT:H is a 1-gigabit (1Gb) DDR2 SDRAM (Synchronous Dynamic Random-Access Memory) chip developed by Micron Technology. Organized as 64 million words by 16 bits (64M x 16), it operates with a supply voltage range of 1.7V to 1.9V. The device supports a clock frequency of up to 333 MHz and features a data transfer rate of 667 MT/s (megatransfers per second). Designed to meet JEDEC standards, it offers programmable CAS (Column Address Strobe) latency, burst length, and burst type, providing flexibility for various applications. The MT47H64M16HR-3 IT:H includes on-die termination (ODT) and a posted CAS additive latency feature to enhance signal integrity and performance. With an access time of approximately 450 ps, it ensures quick data retrieval. The device is housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package, measuring 8 mm x 12.5 mm, and is suitable for surface-mount technology. Its industrial temperature range of -40°C to 95°C makes it ideal for use in networking equipment, computing systems, and other high-performance applications. ​
MT47H64M16HR-3 IT:H

Description: ​The MT47H64M16HR-3 IT:H is a 1-gigabit (1Gb) DDR2 SDRAM (Synchronous Dynamic Random-Acc ...
Package: TRAY | MOQ: 1000 | MPQ: 1000













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