NT5CC128M16JR-DI
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
GET QUOTE NOW!
| Part Number | NT5CC128M16JR-DI |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5CC128M16JR-DI is a high-performance 2Gbit DDR3L SDRAM developed by Nanya Technology, designed for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of 128M × 16 bits, enabling efficient data processing and high bandwidth performance. This device utilizes a DDR3L architecture, supporting data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. The NT5CC128M16JR-DI operates at a nominal voltage of 1.35V, reducing power consumption and thermal output, while also maintaining compatibility with 1.5V operation in flexible system designs. It supports high-speed operation typically up to 1600 Mbps, making it suitable for applications requiring fast and reliable memory access. Advanced features include on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture, ensuring improved signal integrity and stable operation in high-speed environments. The device is housed in a compact 96-ball FBGA surface-mount package, optimized for high-density PCB layouts and space-constrained designs. The NT5CC128M16JR-DI is widely used in applications such as embedded systems, networking devices, industrial controllers, portable electronics, and consumer products, where low power consumption and high-speed volatile memory are essential. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA-96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
Request quotation for
NT5CC128M16JR-DI
NT5CC128M16JR-DI