The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
| Part Number | NT5CC512M8EQ-EKI |
|---|---|
| Manufacturer |
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| Description | The NT5CC512M8EQ-EKI is a high-performance 4Gbit DDR3L synchronous DRAM developed by Nanya Technology, designed for embedded systems, industrial electronics, and computing applications requiring efficient memory bandwidth and reduced power consumption. The device is organized as 512M x 8 bits and features an advanced 8-bank internal architecture, enabling parallel memory operations and improved data throughput. It utilizes a double data rate (DDR3L) interface, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. Operating at a nominal voltage of 1.35V, the NT5CC512M8EQ-EKI supports data rates up to 1866 Mbps, making it suitable for high-speed and energy-efficient system designs. Its low-voltage operation reduces overall power consumption compared to standard DDR3 memory solutions. The device supports key features such as programmable burst lengths, auto-refresh, self-refresh, and power-down modes, ensuring reliable data integrity and optimized power management across various operating conditions. Packaged in a compact 78-ball FBGA surface-mount form factor, the NT5CC512M8EQ-EKI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance. The NT5CC512M8EQ-EKI is widely used in industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms where high-speed volatile memory and low power operation are required. |
| Product Group | SDRAM |
| MOQ | 2000 pcs |
| SPQ | 2000 pcs |
| Figure/Case | FBGA-78 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |