NT5CC512M8EQ-EK
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| Part Number | NT5CC512M8EQ-EK |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5CC512M8EQ-EK is a high-performance 4Gbit DDR3L synchronous DRAM developed by Nanya Technology, designed for embedded systems, computing platforms, and high-speed memory applications requiring efficient bandwidth and low power consumption. The device is organized as 512M x 8 bits and features an advanced 8-bank internal architecture, enabling parallel operations and improved data throughput. It utilizes a double data rate (DDR) interface with synchronous operation, allowing data transfer on both clock edges for increased efficiency. Operating at a nominal voltage of 1.35V, the NT5CC512M8EQ-EK supports data rates up to 1866 Mbps with a clock frequency around 933 MHz, making it suitable for high-speed and energy-efficient designs. Its low-voltage operation reduces power consumption compared to standard DDR3 memory. The device supports key features such as programmable burst lengths, auto refresh, self-refresh, and power-down modes, ensuring data integrity and optimized power management in various operating conditions. Packaged in a compact 78-ball FBGA surface-mount form factor, the NT5CC512M8EQ-EK is optimized for high-density PCB layouts while maintaining reliable signal integrity and thermal performance. The NT5CC512M8EQ-EK is widely used in industrial controllers, networking equipment, embedded systems, consumer electronics, and computing devices where high-speed volatile memory and low power operation are essential. |
| Product Group | SDRAM |
| MOQ | 2000 pcs |
| SPQ | 2000 pcs |
| Figure/Case | FBGA-78 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NT5CC512M8EQ-EK
NT5CC512M8EQ-EK