All Products SDRAM

K4S641632H-UC75 / The K4S641632H-UC75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and improved bandwidth performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>With its <strong>4-bank internal architecture and pipelined data access</strong>, the K4S641632H-UC75 allows concurrent memory operations, improving throughput and efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes <strong>auto-refresh and self-refresh features</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S641632H-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S641632H-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S641632H-UC75

Description: The K4S641632H-UC75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S561632N-UC75 / The K4S561632N-UC75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture with pipelined data paths</strong>, the K4S561632N-UC75 allows concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh and self-refresh</strong> to maintain data integrity and ensure reliable operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S561632N-UC75 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>K4S561632N-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S561632N-UC75

Description: The K4S561632N-UC75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S561632H-UC75 / The K4S561632H-UC75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture with pipelined data paths</strong>, the K4S561632H-UC75 allows concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh and self-refresh</strong> to maintain data integrity and ensure reliable operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S561632H-UC75 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>K4S561632H-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S561632H-UC75

Description: The K4S561632H-UC75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S561632E-UC75 / The K4S561632E-UC75 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed memory applications. <br><br>Built with an advanced <strong>4-bank internal architecture with pipelined data paths</strong>, the K4S561632E-UC75 allows concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh and self-refresh</strong> to maintain data integrity and ensure reliable operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S561632E-UC75 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>K4S561632E-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S561632E-UC75

Description: The K4S561632E-UC75 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S281632N-UC75 / The K4S281632N-UC75 is a high-reliability <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications. It features a memory organization of <strong>4 banks × 2M × 16 bits</strong>, enabling efficient parallel data processing and stable system performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring predictable timing and reliable high-speed operation. It supports clock frequencies up to approximately <strong>133 MHz (-75 speed grade)</strong>, making it suitable for mid- to high-speed digital systems. <br><br>Featuring a <strong>4-bank internal architecture with pipelined data access</strong>, the K4S281632N-UC75 allows concurrent memory operations, improving throughput and efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility across different system designs. <br><br>The device operates at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring easy integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes <strong>auto-refresh and self-refresh functions</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S281632N-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S281632N-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S281632N-UC75

Description: The K4S281632N-UC75 is a high-reliability 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S281632K-UC75 / The K4S281632K-UC75 is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications. It features a memory organization of <strong>4 banks × 2M × 16 bits</strong>, enabling efficient parallel data processing and optimized system bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>133 MHz (CL=3, -75 speed grade)</strong>, making it suitable for mid- to high-speed digital applications. <br><br>The K4S281632K-UC75 incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh and self-refresh</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S281632K-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S281632K-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S281632K-UC75

Description: The K4S281632K-UC75 is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S281632J-UC75 / The K4S281632J-UC75 is a high-reliability <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications. It features a memory organization of <strong>4 banks × 2M × 16 bits</strong>, enabling efficient parallel data processing and improved system bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>133 MHz (CL=3, -75 speed grade)</strong>, making it suitable for mid- to high-speed applications. <br><br>With its <strong>4-bank internal architecture and pipelined data access</strong>, the K4S281632J-UC75 allows concurrent operations such as interleaved read and write cycles, improving overall memory throughput. It supports <strong>programmable burst lengths and CAS latency settings</strong>, offering flexibility for various system designs. <br><br>The device operates at a typical supply voltage of <strong>3.3V</strong> and is compatible with <strong>LVTTL interface levels</strong>, ensuring easy integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh and self-refresh functions</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S281632J-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S281632J-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, and consumer electronics</strong>, where stable and cost-effective high-speed volatile memory is required.
K4S281632J-UC75

Description: The K4S281632J-UC75 is a high-reliability 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4S281632I-UC75 / The K4S281632I-UC75 is a reliable <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for embedded systems, industrial electronics, and general-purpose memory applications. It features a memory organization of <strong>4 banks × 2M × 16 bits</strong>, enabling efficient parallel data processing and optimized bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system behavior. It supports clock frequencies up to approximately <strong>133 MHz</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for mid- to high-speed digital applications. <br><br>The K4S281632I-UC75 incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst modes and CAS latency options</strong>, providing flexibility for various system designs. <br><br>Operating at a supply voltage of approximately <strong>3.3V</strong> and compatible with <strong>LVTTL interface levels</strong>, the device can be easily integrated into microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh and self-refresh</strong> to maintain data integrity during operation. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the K4S281632I-UC75 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>K4S281632I-UC75</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, and consumer electronics</strong>, where stable and cost-effective volatile memory solutions are required.
K4S281632I-UC75

Description: The K4S281632I-UC75 is a reliable 128Mbit CMOS synchronous DRAM (SDRAM) d ...
Package: TRAY | MOQ: 960 | MPQ: 960

K4B8G1646Q-BYK0 / The K4B8G1646Q-BYK0 is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-performance embedded systems, networking equipment, and computing applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity storage and efficient parallel data processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to traditional SDRAM technologies. It supports data rates up to approximately <strong>1600 MT/s</strong>, making it suitable for high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B8G1646Q-BYK0 enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.35V (DDR3L standard)</strong> and is also compatible with <strong>1.5V DDR3 systems</strong>, ensuring reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B8G1646Q-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B8G1646Q-BYK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
K4B8G1646Q-BYK0

Description: The K4B8G1646Q-BYK0 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B8G1646E-BYK0 / The K4B8G1646E-BYK0 is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-performance embedded systems, networking equipment, and advanced computing applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity data storage and efficient parallel data processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, transferring data on both rising and falling edges of the clock signal to significantly increase bandwidth compared to conventional SDRAM technologies. It supports data rates up to approximately <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B8G1646E-BYK0 enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and is also compatible with <strong>1.5V DDR3 systems</strong>, ensuring reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B8G1646E-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B8G1646E-BYK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
K4B8G1646E-BYK0

Description: The K4B8G1646E-BYK0 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B8G1646D-BYK0 / The K4B8G1646D-BYK0 is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-performance embedded systems, networking equipment, and advanced computing applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity storage and efficient parallel data processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal to significantly increase bandwidth compared to standard SDRAM technologies. It supports data rates up to approximately <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B8G1646D-BYK0 enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.35V (DDR3L)</strong> and is also compatible with <strong>1.5V DDR3 systems</strong>, ensuring reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B8G1646D-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B8G1646D-BYK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
K4B8G1646D-BYK0

Description: The K4B8G1646D-BYK0 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B4G1646Q-BYK0 / The K4B4G1646Q-BYK0 is a high-performance <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed computing, embedded systems, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data storage and high-bandwidth operation. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM. It supports data rates up to <strong>1600 MT/s</strong>, making it suitable for demanding digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture</strong>, the K4B4G1646Q-BYK0 enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong>, ensuring reduced power consumption while maintaining high performance, and is also compatible with standard DDR3 environments. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B4G1646Q-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B4G1646Q-BYK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and computing platforms</strong>, where high-speed, low-power, and cost-effective volatile memory solutions are required.
K4B4G1646Q-BYK0

Description: The K4B4G1646Q-BYK0 is a high-performance 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B4G1646E-BCK0 / The K4B4G1646E-BCK0 is a high-performance <strong>4Gbit DDR3 synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed computing, embedded systems, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data storage and high-bandwidth processing. <br><br>The device operates using a <strong>double data rate (DDR3) architecture</strong>, transferring data on both rising and falling edges of the clock signal to significantly increase throughput compared to conventional SDRAM technologies. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture and pipelined operation</strong>, the K4B4G1646E-BCK0 enables concurrent memory access and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates at a typical supply voltage of <strong>1.5V</strong>, ensuring stable performance and compatibility with standard DDR3 memory interfaces while maintaining efficient power consumption. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B4G1646E-BCK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B4G1646E-BCK0</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and computing platforms</strong>, where high-speed and cost-effective volatile memory solutions are required.
K4B4G1646E-BCK0

Description: The K4B4G1646E-BCK0 is a high-performance 4Gbit DDR3 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B4G1646D-BCK0 / The K4B4G1646D-BCK0 is a high-performance <strong>4Gbit DDR3 synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed embedded systems, computing platforms, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient data storage and high-bandwidth processing. <br><br>The device operates using a <strong>double data rate (DDR3) architecture</strong>, transferring data on both the rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. It supports data rates up to approximately <strong>2133 Mbps</strong>, making it suitable for demanding high-speed applications. <br><br>Built with an advanced <strong>8-bank internal architecture and pipelined operation</strong>, the K4B4G1646D-BCK0 enables concurrent memory access and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates at a typical supply voltage of <strong>1.5V</strong>, ensuring stable performance and compatibility with standard DDR3 memory interfaces. It is suitable for integration with microprocessors, FPGAs, and SoC-based platforms. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B4G1646D-BCK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B4G1646D-BCK0</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and computing devices</strong>, where high-speed and cost-effective volatile memory solutions are required.
K4B4G1646D-BCK0

Description: The K4B4G1646D-BCK0 is a high-performance 4Gbit DDR3 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B2G1646Q-BYK0 / The K4B2G1646Q-BYK0 is a high-performance <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed embedded systems, computing platforms, and industrial applications. It features a memory organization of <strong>128M × 16 bits</strong>, providing efficient data storage and high-bandwidth performance. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing throughput compared to standard SDRAM. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for demanding high-speed digital systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B2G1646Q-BYK0 enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong>, ensuring reduced power consumption while maintaining high performance, and remains compatible with standard DDR3 interfaces. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B2G1646Q-BYK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>K4B2G1646Q-BYK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and computing devices</strong>, where high-speed and low-power volatile memory solutions are required.
K4B2G1646Q-BYK0

Description: The K4B2G1646Q-BYK0 is a high-performance 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B2G1646E-BCK0 / The K4B2G1646E-BCK0 is a high-performance <strong>2Gbit DDR3 synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed embedded systems, computing platforms, and consumer electronics. It features a memory organization of <strong>128M × 16 bits</strong>, providing efficient data storage and high-bandwidth performance. <br><br>The device operates using a <strong>double data rate (DDR3) architecture</strong>, transferring data on both the rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for high-speed digital applications. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B2G1646E-BCK0 enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, ensuring flexibility for modern system designs. <br><br>The device operates at a supply voltage of approximately <strong>1.5V</strong>, offering stable performance and compatibility with standard DDR3 memory interfaces. It integrates seamlessly with processors, FPGAs, and SoC-based systems. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B2G1646E-BCK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B2G1646E-BCK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and computing devices</strong>, where high-speed and cost-effective volatile memory solutions are required.
K4B2G1646E-BCK0

Description: The K4B2G1646E-BCK0 is a high-performance 2Gbit DDR3 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B2G1646D-BCK0 / The K4B2G1646D-BCK0 is a high-performance <strong>2Gbit DDR3 synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed embedded systems, computing platforms, and consumer electronics. It features a memory organization of <strong>128M × 16 bits</strong>, enabling efficient data storage and high-bandwidth operation. <br><br>The device operates using a <strong>double data rate (DDR3) architecture</strong>, transferring data on both rising and falling edges of the clock signal to significantly increase throughput. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for demanding digital applications. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B2G1646D-BCK0 enables concurrent memory operations and improved system efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates at a supply voltage of approximately <strong>1.5V</strong> with a typical operating range of <strong>1.425V to 1.575V</strong>, ensuring stable performance and compatibility with standard DDR3 interfaces. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B2G1646D-BCK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>K4B2G1646D-BCK0</strong> is widely used in applications such as <strong>embedded systems, single-board computers, industrial controllers, networking equipment, and consumer electronics</strong>, where high-speed and cost-effective volatile memory solutions are required.
K4B2G1646D-BCK0

Description: The K4B2G1646D-BCK0 is a high-performance 2Gbit DDR3 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

K4B1G1646E-BCK0 / The K4B1G1646E-BCK0 is a high-performance <strong>1Gbit DDR3 synchronous DRAM (SDRAM)</strong> developed by <strong>Samsung</strong>, designed for high-speed computing, embedded systems, and consumer electronics applications. It features a memory organization of <strong>64M × 16 bits</strong>, enabling efficient data handling and reliable performance in bandwidth-intensive systems. <br><br>The device operates using a <strong>double data rate (DDR3) architecture</strong>, transferring data on both rising and falling edges of the clock signal to significantly increase throughput compared to conventional SDRAM technologies. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for high-speed digital designs. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch</strong>, the K4B1G1646E-BCK0 enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern system architectures. <br><br>The device operates at a supply voltage of approximately <strong>1.5V</strong>, ensuring stable performance while maintaining moderate power consumption. It is fully compatible with standard <strong>DDR3 memory interfaces</strong>, allowing seamless integration with processors, FPGAs, and SoC platforms. <br><br>Packaged in a compact <strong>96-ball FBGA surface-mount form factor</strong>, the K4B1G1646E-BCK0 is optimized for high-density PCB layouts and reliable signal integrity in high-speed applications. <br><br>The <strong>K4B1G1646E-BCK0</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and computing devices</strong>, where high-speed and cost-effective volatile memory solutions are required.
K4B1G1646E-BCK0

Description: The K4B1G1646E-BCK0 is a high-performance 1Gbit DDR3 synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 96 | MPQ: 96

IS43TR32800BL-125KBL / The IS43TR32800BL-125KBL is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity storage and efficient parallel data processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to traditional SDRAM technologies. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed computing and communication systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch design</strong>, the IS43TR32800BL-125KBL enables concurrent memory operations and improved efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern system architectures. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and is compatible with standard <strong>1.5V DDR3 systems</strong>, ensuring reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount form factor</strong>, the IS43TR32800BL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR32800BL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
IS43TR32800BL-125KBL

Description: The IS43TR32800BL-125KBL is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR32512BL-125KBL / The IS43TR32512BL-125KBL is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, engineered for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling large-capacity data storage and efficient parallel data processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to conventional SDRAM. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed computing and communication systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch design</strong>, the IS43TR32512BL-125KBL enables concurrent memory operations and improved efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and is backward compatible with <strong>1.5V DDR3 operation</strong>, ensuring reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount form factor</strong>, the IS43TR32512BL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR32512BL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
IS43TR32512BL-125KBL

Description: The IS43TR32512BL-125KBL is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR32512AL-125KBL / The IS43TR32512AL-125KBL is a high-density <strong>8Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>512M × 16 bits</strong>, providing large-capacity storage with efficient parallel data processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture</strong>, enabling data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to conventional SDRAM. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed computing and communication systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch design</strong>, the IS43TR32512AL-125KBL allows concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, ensuring flexibility in modern system designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong>, reducing power consumption while maintaining high performance, and remains compatible with standard DDR3 environments. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount form factor</strong>, the IS43TR32512AL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR32512AL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
IS43TR32512AL-125KBL

Description: The IS43TR32512AL-125KBL is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR16400BL-125KBL / The IS43TR16400BL-125KBL is a high-performance <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, enabling high-capacity data storage with efficient parallel processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-performance computing and communication systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch design</strong>, the IS43TR16400BL-125KBL enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, offering flexibility for modern memory controller designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong>, reducing power consumption while maintaining high performance, and remains compatible with standard DDR3 systems. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount form factor</strong>, the IS43TR16400BL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16400BL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-density volatile memory is required.
IS43TR16400BL-125KBL

Description: The IS43TR16400BL-125KBL is a high-performance 4Gbit DDR3L synchronous DRAM (SDRAM ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR16320BL-125KBL / The IS43TR16320BL-125KBL is a high-density <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, engineered for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, enabling high-capacity storage and efficient parallel data processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to conventional SDRAM technologies. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed computing and communication systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch design</strong>, the IS43TR16320BL-125KBL enables concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, providing flexibility for modern system architectures. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and is backward compatible with <strong>1.5V DDR3 operation</strong>, ensuring reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount form factor</strong>, the IS43TR16320BL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16320BL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
IS43TR16320BL-125KBL

Description: The IS43TR16320BL-125KBL is a high-density 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR16320AL-125KBL / The IS43TR16320AL-125KBL is a high-density <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, providing high-capacity storage with efficient parallel data processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture</strong>, enabling data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to conventional SDRAM. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed computing and communication systems. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch design</strong>, the IS43TR16320AL-125KBL allows concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT)</strong>, ensuring flexibility in modern system designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and is backward compatible with <strong>1.5V DDR3 operation</strong>, reducing power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount form factor</strong>, the IS43TR16320AL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16320AL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
IS43TR16320AL-125KBL

Description: The IS43TR16320AL-125KBL is a high-density 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: tray | MOQ: 190 | MPQ: 190

IS43TR16256BL-125KBL / The IS43TR16256BL-125KBL is a high-density <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, providing high-capacity storage with efficient parallel data processing. <br><br>The device utilizes a <strong>double data rate (DDR3L) architecture</strong>, enabling data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it ideal for high-speed computing applications. <br><br>Built with an advanced <strong>8-bank internal architecture and 8n prefetch design</strong>, the IS43TR16256BL-125KBL allows concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, ensuring flexibility in modern system designs. <br><br>The device operates within a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and is backward compatible with <strong>1.5V DDR3 operation</strong>, enabling reduced power consumption without compromising performance. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount package</strong>, the IS43TR16256BL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16256BL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing systems</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
IS43TR16256BL-125KBL

Description: The IS43TR16256BL-125KBL is a high-density 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR16256AL-125KBL / The IS43TR16256AL-125KBL is a high-density <strong>4Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>256M × 16 bits</strong>, enabling efficient parallel data processing and large memory capacity. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, transferring data on both rising and falling edges of the clock signal to achieve higher bandwidth compared to standard SDRAM. It supports data rates up to approximately <strong>800 MHz (1600 MT/s)</strong>, making it suitable for high-speed computing systems. <br><br>The IS43TR16256AL-125KBL incorporates an advanced <strong>8-bank internal architecture with 8n prefetch</strong>, allowing concurrent memory operations and improved throughput. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern memory controller designs. <br><br>Operating at a low voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong> and backward compatible with <strong>1.5V DDR3</strong>, the device ensures reduced power consumption while maintaining high performance. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount package</strong>, the IS43TR16256AL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16256AL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-capacity volatile memory is required.
IS43TR16256AL-125KBL

Description: The IS43TR16256AL-125KBL is a high-density 4Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR16128BL-125KBL / The IS43TR16128BL-125KBL is a high-speed <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of <strong>128M × 16 bits</strong>, enabling high-density storage with efficient parallel data processing. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth. It supports data rates up to <strong>1600 MT/s (800 MHz clock)</strong>, making it suitable for high-speed applications. <br><br>The IS43TR16128BL-125KBL incorporates an advanced <strong>8-bank internal architecture with 8n prefetch</strong>, enabling concurrent operations and improved memory efficiency. It supports <strong>programmable CAS latency, burst length (4, 8), and on-die termination (ODT)</strong>, providing flexibility for modern system designs. <br><br>Operating at a low voltage range of <strong>1.283V to 1.45V (DDR3L)</strong> and also compatible with standard <strong>1.5V DDR3 operation</strong>, the device ensures reduced power consumption while maintaining high performance. It is fully compatible with <strong>high-speed memory interfaces</strong>, enabling seamless integration with processors, FPGAs, and SoC platforms. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount form factor</strong>, the IS43TR16128BL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16128BL-125KBL</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking devices, consumer electronics, and high-performance computing systems</strong>, where high-speed, low-power, and high-density volatile memory is required.
IS43TR16128BL-125KBL

Description: The IS43TR16128BL-125KBL is a high-speed 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS43TR16128AL-125KBL / The IS43TR16128AL-125KBL is a high-speed <strong>2Gbit DDR3L synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for advanced embedded systems, networking equipment, and high-performance computing applications. It features a memory organization of <strong>128M × 16 bits</strong>, enabling high-density storage with efficient parallel data access. <br><br>The device operates using a <strong>double data rate (DDR3L) architecture</strong>, transferring data on both rising and falling edges of the clock signal, which significantly increases bandwidth compared to standard SDRAM. It supports clock frequencies up to approximately <strong>800 MHz</strong>, making it suitable for high-speed data processing systems. <br><br>Built with an advanced internal structure, the IS43TR16128AL-125KBL utilizes a <strong>multi-bank architecture with pipelined operation</strong>, allowing simultaneous operations and improved memory efficiency. It supports <strong>burst operations and programmable latency features</strong>, providing flexibility for modern memory controller designs. <br><br>The device operates within a low-voltage range of <strong>1.283V to 1.45V (DDR3L standard)</strong>, reducing power consumption while maintaining high performance. It is compatible with <strong>high-speed memory interfaces</strong>, enabling seamless integration into processors, FPGAs, and SoC-based systems. <br><br>Packaged in a compact <strong>96-ball TWBGA surface-mount package</strong>, the IS43TR16128AL-125KBL is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. <br><br>The <strong>IS43TR16128AL-125KBL</strong> is widely used in applications such as <strong>embedded systems, networking devices, industrial automation, consumer electronics, and high-performance computing platforms</strong>, where high-speed, low-power, and high-density volatile memory is required.
IS43TR16128AL-125KBL

Description: The IS43TR16128AL-125KBL is a high-speed 2Gbit DDR3L synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 190 | MPQ: 190

IS42S32800J-6TLI / The IS42S32800J-6TLI is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed embedded and industrial memory applications. It features a memory organization of <strong>4 banks × 8M × 32 bits</strong>, enabling wide data bus access and high-throughput parallel processing. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system performance. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong> with fast access times around <strong>5.4–6 ns</strong>, making it suitable for demanding high-speed digital systems. <br><br>The IS42S32800J-6TLI utilizes a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent memory operations and improved bandwidth efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for a wide range of system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device enables seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes <strong>auto-refresh, self-refresh, and power-down modes</strong> to ensure data integrity and efficient power management. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the IS42S32800J-6TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S32800J-6TLI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, communication devices, and consumer electronics</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S32800J-6TLI

Description: The IS42S32800J-6TLI is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S32400J-7TLI / The IS42S32400J-7TLI is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed embedded and industrial applications requiring wide data bus memory access. It features a memory organization of <strong>4 banks × 4M × 32 bits</strong>, enabling high-throughput parallel processing and efficient data handling. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong>, making it suitable for high-speed digital systems. <br><br>The IS42S32400J-7TLI incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent memory operations and improved bandwidth efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, providing flexibility for a wide range of system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize power consumption. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the IS42S32400J-7TLI is ideal for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S32400J-7TLI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, communication devices, and consumer electronics</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S32400J-7TLI

Description: The IS42S32400J-7TLI is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S32400F-6TLI / The IS42S32400F-6TLI is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed memory applications in embedded and industrial systems. It features a memory organization of <strong>4 banks × 4M × 32 bits</strong>, enabling wide data bus access and high-throughput parallel processing. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed digital designs. <br><br>The IS42S32400F-6TLI utilizes a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent memory operations and improved bandwidth efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, providing flexibility for various system architectures. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device enables seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize power consumption. <br><br>Packaged in a compact <strong>86-pin TSOP-II surface-mount form factor</strong>, the IS42S32400F-6TLI is suitable for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S32400F-6TLI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, communication devices, and consumer electronics</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S32400F-6TLI

Description: The IS42S32400F-6TLI is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16800J-7TLI / The IS42S16800J-7TLI is a high-performance <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for embedded systems and industrial applications requiring reliable high-speed memory. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling efficient parallel data processing and optimized bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with access times around <strong>5.4 ns</strong>, making it suitable for high-speed digital applications. <br><br>The IS42S16800J-7TLI incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device enables seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh, self-refresh, and burst operation support</strong> to ensure data integrity and efficient power usage. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16800J-7TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16800J-7TLI</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S16800J-7TLI

Description: The IS42S16800J-7TLI is a high-performance 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16800F-7TLI / The IS42S16800F-7TLI is a high-speed <strong>128Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for embedded systems and industrial applications requiring reliable and efficient memory performance. It features a memory organization of <strong>4 banks × 8M × 16 bits</strong>, enabling high-bandwidth parallel data processing. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system behavior. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with an access time of around <strong>5.4 ns</strong>, making it suitable for high-speed digital applications. <br><br>The IS42S16800F-7TLI utilizes a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures seamless integration with microcontrollers, DSPs, and FPGA-based systems. Additional features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> help maintain data integrity and optimize power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16800F-7TLI is ideal for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16800F-7TLI</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where cost-effective and high-speed volatile memory is required.
IS42S16800F-7TLI

Description: The IS42S16800F-7TLI is a high-speed 128Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16400J-7TLI / The IS42S16400J-7TLI is a reliable <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed embedded and industrial memory applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data access and optimized system performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized to the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong>, making it suitable for high-speed digital systems. <br><br>The IS42S16400J-7TLI incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent read and write operations to improve memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, offering flexibility for a wide range of system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize power efficiency. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16400J-7TLI is ideal for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16400J-7TLI</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where stable and cost-effective high-speed volatile memory is required.
IS42S16400J-7TLI

Description: The IS42S16400J-7TLI is a reliable 64Mbit CMOS synchronous DRAM (SDRAM) d ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16400F-7TLI / The IS42S16400F-7TLI is a high-speed <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for embedded systems and industrial applications requiring reliable and efficient memory performance. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling parallel data processing and optimized bandwidth. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed digital designs. <br><br>The IS42S16400F-7TLI incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system configurations. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16400F-7TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16400F-7TLI</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where cost-effective and high-speed volatile memory is required.
IS42S16400F-7TLI

Description: The IS42S16400F-7TLI is a high-speed 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16320D-7TLI / The IS42S16320D-7TLI is a high-performance <strong>512Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-speed embedded and industrial memory applications. It features a memory organization of <strong>4 banks × 32M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system performance. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with access times around <strong>5.4–7 ns</strong>, making it suitable for demanding digital systems. <br><br>The IS42S16320D-7TLI utilizes a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent read and write operations to improve memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device ensures easy integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes advanced features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and optimize power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16320D-7TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16320D-7TLI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and communication devices</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S16320D-7TLI

Description: The IS42S16320D-7TLI is a high-performance 512Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 108 | MPQ: 108

IS42S16160J-7TLI / The IS42S16160J-7TLI is a high-speed <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance embedded and industrial applications. It features a memory organization of <strong>4 banks × 16M × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with fast access times around <strong>5.4 ns</strong>, making it suitable for high-speed digital systems. <br><br>The IS42S16160J-7TLI incorporates a <strong>4-bank internal architecture with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for a wide range of system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and compatible with <strong>LVTTL interface levels</strong>, the device can be easily integrated into microcontrollers, DSPs, and FPGA-based systems. It also includes <strong>auto-refresh, self-refresh, and power-down modes</strong> to ensure data integrity and efficient power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16160J-7TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16160J-7TLI</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where high-speed and cost-effective volatile memory is required.
IS42S16160J-7TLI

Description: The IS42S16160J-7TLI is a high-speed 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

IS42S16160F-7TLI / The IS42S16160F-7TLI is a high-speed <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>ISSI (Integrated Silicon Solution Inc.)</strong>, designed for high-performance memory applications in embedded and industrial systems. It features a memory organization of <strong>4 banks × 16M × 16 bits</strong>, enabling efficient parallel data processing and high data throughput. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable system performance. It supports clock frequencies up to approximately <strong>143 MHz (-7 speed grade)</strong> with fast access times around <strong>5–5.4 ns</strong>, making it suitable for demanding digital applications. <br><br>The IS42S16160F-7TLI incorporates a <strong>4-bank internal architecture with pipelined operation</strong>, allowing concurrent memory access and improved bandwidth. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for a wide range of system designs. <br><br>Operating at a supply voltage of <strong>3.0V to 3.6V (typ. 3.3V)</strong>, the device is compatible with standard <strong>LVTTL interface levels</strong>, ensuring seamless integration with microcontrollers, DSPs, and FPGA-based platforms. It also includes features such as <strong>auto-refresh, self-refresh, and power-down modes</strong> to maintain data integrity and reduce power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the IS42S16160F-7TLI is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>IS42S16160F-7TLI</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and communication devices</strong>, where high-speed and cost-effective volatile memory solutions are required.
IS42S16160F-7TLI

Description: The IS42S16160F-7TLI is a high-speed 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: TRAY | MOQ: 108 | MPQ: 108

HY57V641620HTP-6 / The HY57V641620HTP-6 is a high-performance <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> manufactured by <strong>SK Hynix</strong>, designed for applications requiring high bandwidth and reliable memory operation. It is organized as <strong>4 banks × 1M × 16 bits</strong>, enabling efficient parallel data processing and optimized system performance. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable behavior in high-speed systems. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for demanding digital and embedded applications. <br><br>Featuring a <strong>4-bank internal architecture with pipelined data paths</strong>, the HY57V641620HTP-6 allows concurrent memory operations, improving throughput and reducing latency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, offering flexibility for different system requirements. <br><br>The device operates at a typical supply voltage of <strong>3.3V</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based designs. Additional features such as <strong>auto-refresh, self-refresh, and data masking (UDQM/LDQM)</strong> help maintain data integrity and efficient power management. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V641620HTP-6 is optimized for space-constrained PCB layouts while maintaining reliable electrical characteristics. <br><br>The <strong>HY57V641620HTP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and communication devices</strong>, where cost-effective and high-speed volatile memory is required.
HY57V641620HTP-6

Description: The HY57V641620HTP-6 is a high-performance 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 500 | MPQ: 500

HY57V641620FTP-6 / The HY57V641620FTP-6 is a high-speed <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for applications requiring reliable and efficient high-bandwidth memory performance. It features an internal organization of <strong>4 banks × 1M × 16 bits</strong>, enabling parallel data processing and optimized throughput. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock, ensuring stable timing and predictable operation. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong> with a maximum access time of around <strong>5.4 ns</strong>, making it suitable for high-speed digital systems. <br><br>The HY57V641620FTP-6 utilizes a <strong>4-bank architecture with pipelined data access</strong>, allowing concurrent read and write operations to improve overall system efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility for various memory controller designs. <br><br>Operating at a typical supply voltage of <strong>3.3V</strong> and compatible with <strong>LVTTL interface levels</strong>, the device can be easily integrated into microcontrollers, DSPs, and FPGA-based systems. It also includes advanced features such as <strong>auto-refresh, self-refresh, and power-down modes</strong>, ensuring data integrity and efficient power consumption. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V641620FTP-6 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>HY57V641620FTP-6</strong> is widely used in applications such as <strong>embedded systems, networking equipment, industrial controllers, printers, and consumer electronics</strong>, where stable and cost-effective volatile memory solutions are required.
HY57V641620FTP-6

Description: The HY57V641620FTP-6 is a high-speed 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V641620ETP-6 / The HY57V641620ETP-6 is a high-performance <strong>64Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for applications requiring high bandwidth and efficient memory access. It is organized as <strong>4 banks × 1M × 16 bits</strong>, enabling parallel data processing and improved system performance. <br><br>The device features a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the system clock, ensuring stable timing and predictable operation in high-speed environments. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for demanding digital systems. <br><br>With its <strong>4-bank internal architecture and pipelined data paths</strong>, the HY57V641620ETP-6 enables concurrent memory operations, significantly improving throughput. It also supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates at a typical supply voltage of <strong>3.3V</strong> and is compatible with <strong>LVTTL interface levels</strong>, allowing seamless integration with microcontrollers, DSPs, and FPGA-based systems. Advanced features such as <strong>auto-refresh, self-refresh, and data masking (UDQM/LDQM)</strong> ensure data integrity and efficient power management. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V641620ETP-6 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>HY57V641620ETP-6</strong> is widely used in applications such as <strong>embedded systems, networking equipment, consumer electronics, industrial controllers, and communication devices</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V641620ETP-6

Description: The HY57V641620ETP-6 is a high-performance 64Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V561620HTP-6 / The HY57V561620HTP-6 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> manufactured by <strong>SK Hynix</strong>, designed for high-speed memory applications requiring reliable and efficient data processing. It features an internal organization of <strong>4 banks × 4M × 16 bits</strong>, enabling parallel data access and improved system bandwidth. <br><br>The device operates using a <strong>fully synchronous interface</strong>, where all inputs and outputs are synchronized to the rising edge of the clock signal, ensuring stable timing and high-speed performance. It supports operating frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for demanding digital systems. <br><br>The HY57V561620HTP-6 incorporates a <strong>4-bank architecture with pipelined data access</strong>, allowing concurrent operations such as read and write cycles, which enhances overall memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency options</strong>, providing flexibility across various applications. <br><br>The device operates at a typical supply voltage of <strong>3.3V</strong> and is compatible with <strong>LVTTL logic levels</strong>, ensuring easy integration with microprocessors, DSPs, and FPGA-based systems. Additional features such as <strong>auto-refresh, self-refresh, and data masking</strong> contribute to data integrity and efficient power management. <br><br>Housed in a compact <strong>54-pin TSOP-II surface-mount package</strong>, the HY57V561620HTP-6 is optimized for space-constrained PCB layouts while maintaining reliable electrical performance. <br><br>The <strong>HY57V561620HTP-6</strong> is widely used in applications including <strong>embedded systems, networking equipment, industrial controllers, consumer electronics, and display systems</strong>, where high-speed and cost-effective volatile memory solutions are required.
HY57V561620HTP-6

Description: The HY57V561620HTP-6 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V561620FTP-6 / The HY57V561620FTP-6 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for embedded systems, networking equipment, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for high-speed memory applications. <br><br>Built with an advanced architecture, the HY57V561620FTP-6 incorporates a <strong>4-bank internal structure with pipelined data paths</strong>, allowing concurrent operations and improved memory throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (UDQM/LDQM)</strong> to maintain data integrity and optimize system performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V561620FTP-6 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>HY57V561620FTP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display systems</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V561620FTP-6

Description: The HY57V561620FTP-6 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V561620ETP-6 / The HY57V561620ETP-6 is a high-performance <strong>256Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for embedded systems, networking equipment, and high-speed digital applications. It features a memory organization of <strong>4 banks × 4M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports high-speed operation suitable for systems requiring reliable memory access and fast data throughput. <br><br>Built with an advanced architecture, the HY57V561620ETP-6 incorporates a <strong>4-bank internal structure with pipelined data paths</strong>, allowing concurrent operations and improved memory efficiency. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for different system configurations. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (UDQM/LDQM)</strong> to maintain data integrity and optimize system performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V561620ETP-6 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>HY57V561620ETP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display systems</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V561620ETP-6

Description: The HY57V561620ETP-6 is a high-performance 256Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V281620HTP-6 / The HY57V281620HTP-6 is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for embedded systems, networking devices, and high-speed digital applications. It features a memory organization of <strong>4 banks × 2M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the system clock, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for high-speed memory applications. <br><br>Built with an advanced architecture, the HY57V281620HTP-6 incorporates a <strong>4-bank internal structure with pipelined data paths</strong>, allowing concurrent operations and improved data throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity and optimize system performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V281620HTP-6 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>HY57V281620HTP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display systems</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V281620HTP-6

Description: The HY57V281620HTP-6 is a high-performance 128Mbit synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V281620ETP-6 / The HY57V281620ETP-6 is a high-performance <strong>128Mbit synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for embedded systems, networking devices, and high-speed digital applications. It features a memory organization of <strong>2M × 4 banks × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation. <br><br>The device operates with a <strong>fully synchronous interface</strong>, where all inputs and outputs are registered on the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock frequencies up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for high-speed memory applications. <br><br>Built on an advanced architecture, the HY57V281620ETP-6 includes a <strong>4-bank internal structure with pipelined data paths</strong>, allowing concurrent operations and improved data throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (2 or 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V (typ. 3.3V)</strong> and is compatible with <strong>LVTTL interface levels</strong>, enabling seamless integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity and optimize system performance. <br><br>Packaged in a compact <strong>54-pin TSOP-II surface-mount form factor</strong>, the HY57V281620ETP-6 is optimized for space-constrained PCB designs while maintaining reliable electrical performance. <br><br>The <strong>HY57V281620ETP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, networking equipment, consumer electronics, and display systems</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V281620ETP-6

Description: The HY57V281620ETP-6 is a high-performance 128Mbit synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

HY57V161610FTP-6 / The HY57V161610FTP-6 is a high-performance <strong>16Mbit CMOS synchronous DRAM (SDRAM)</strong> developed by <strong>SK Hynix</strong>, designed for embedded systems, graphics applications, and memory-intensive digital designs. It features a memory organization of <strong>2 banks × 512K × 16 bits</strong>, enabling efficient parallel data processing and high bandwidth operation. <br><br>The device operates using a <strong>fully synchronous interface</strong>, where all inputs and outputs are referenced to the rising edge of the clock signal, ensuring stable timing and predictable performance. It supports clock speeds up to approximately <strong>166 MHz (-6 speed grade)</strong>, making it suitable for high-speed memory applications. <br><br>Built with an advanced architecture, the HY57V161610FTP-6 includes <strong>internal pipelining and dual-bank structure</strong>, allowing concurrent operations and improved data throughput. It supports <strong>programmable burst lengths (1, 2, 4, 8, full page) and CAS latency (1, 2, 3 cycles)</strong>, providing flexibility for various system designs. <br><br>The device operates within a supply voltage range of <strong>3.0V to 3.6V</strong> and is fully compatible with <strong>LVTTL interface levels</strong>, enabling easy integration with microcontrollers, DSPs, and FPGA-based systems. It also includes features such as <strong>auto-refresh, self-refresh, and data masking (DQM)</strong> to maintain data integrity and reduce system overhead. <br><br>Packaged in a compact <strong>50-pin TSOP-II surface-mount form factor</strong>, the HY57V161610FTP-6 is optimized for space-constrained PCB designs while maintaining high reliability and signal integrity. <br><br>The <strong>HY57V161610FTP-6</strong> is widely used in applications such as <strong>embedded systems, industrial controllers, display systems, networking equipment, and consumer electronics</strong>, where reliable and cost-effective high-speed volatile memory is required.
HY57V161610FTP-6

Description: The HY57V161610FTP-6 is a high-performance 16Mbit CMOS synchronous DRAM (SDRAM) ...
Package: T&R | MOQ: 1000 | MPQ: 1000

H5TC8G63DJR-PBA / The H5TC8G63DJR-PBA is a high-density <strong>8Gbit DDR3L SDRAM memory IC</strong> developed by <strong>SK Hynix</strong>, designed for high-performance embedded systems, industrial computing, and networking applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation. <br><br>The device utilizes <strong>DDR3L (low-voltage DDR3) technology</strong> with a typical operating voltage of <strong>1.35V</strong>, significantly reducing power consumption while maintaining high-speed performance. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for demanding applications requiring fast and reliable memory access. <br><br>Built on an advanced <strong>8-bank architecture with 8n prefetch</strong>, the H5TC8G63DJR-PBA enables efficient concurrent operations and improved memory throughput. It supports essential features such as <strong>programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh</strong>, ensuring stable and efficient memory management in dynamic systems. <br><br>The device incorporates a <strong>fully synchronous interface with differential clock inputs (CK/CK#) and data strobe signals (DQS)</strong>, ensuring signal integrity and reliable operation at high frequencies. It also includes advanced functions such as <strong>on-die termination (ODT), ZQ calibration, DLL alignment, and write leveling</strong>, simplifying high-speed PCB design and improving overall system stability. <br><br>Packaged in a compact <strong>96-ball FBGA form factor</strong>, the H5TC8G63DJR-PBA is optimized for high-density PCB layouts and space-constrained designs. It typically supports operation across <strong>commercial and industrial temperature ranges</strong>, ensuring reliable performance in demanding environments. <br><br>The <strong>H5TC8G63DJR-PBA</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications, consumer electronics, and FPGA/SoC memory expansion</strong>, where high-capacity, high-speed, and low-power volatile memory is essential.
H5TC8G63DJR-PBA

Description: The H5TC8G63DJR-PBA is a high-density 8Gbit DDR3L SDRAM memory IC develop ...
Package: T&R | MOQ: 250 | MPQ: 250

H5TC8G63CFR-PBA / The H5TC8G63CFR-PBA is a high-density <strong>8Gbit DDR3L SDRAM memory IC</strong> developed by <strong>SK Hynix</strong>, designed for high-performance embedded systems, industrial computing, and networking applications. It features a memory organization of <strong>512M × 16 bits</strong>, enabling efficient parallel data transfer and high bandwidth operation.<br><br>The device utilizes <strong>DDR3L (low-voltage DDR3) technology</strong> with a typical operating voltage of <strong>1.35V</strong>, significantly reducing power consumption while maintaining high-speed performance. It supports data rates up to approximately <strong>1600 Mbps</strong>, making it suitable for demanding applications requiring fast and reliable memory access.<br><br>Built on an advanced <strong>8-bank architecture with 8n prefetch</strong>, the H5TC8G63CFR-PBA enables efficient concurrent operations and improved memory throughput. It supports essential features such as <strong>programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh</strong>, ensuring stable and efficient memory management in dynamic systems.<br><br>The device incorporates a <strong>fully synchronous interface with differential clock inputs (CK/CK#) and data strobe signals (DQS)</strong>, ensuring signal integrity and reliable operation at high frequencies. It also includes advanced functions such as <strong>on-die termination (ODT), ZQ calibration, DLL alignment, and write leveling</strong>, simplifying high-speed PCB design and improving overall system stability.<br><br>Packaged in a compact <strong>96-ball FBGA form factor</strong>, the H5TC8G63CFR-PBA is optimized for high-density PCB layouts and space-constrained designs. It typically supports operation across <strong>commercial and industrial temperature ranges</strong>, ensuring reliable performance in demanding environments.<br><br>The <strong>H5TC8G63CFR-PBA</strong> is widely used in applications such as <strong>embedded systems, industrial automation, networking equipment, telecommunications, consumer electronics, and FPGA/SoC memory expansion</strong>, where high-capacity, high-speed, and low-power volatile memory is essential.
H5TC8G63CFR-PBA

Description: The H5TC8G63CFR-PBA is a high-density 8Gbit DDR3L SDRAM memory IC develop ...
Package: T&R | MOQ: 250 | MPQ: 250

H5TC8G63AFR-PBA / The H5TC8G63AFR-PBA is a high-density 8Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for advanced embedded systems and high-performance computing applications requiring large-capacity volatile memory. It features a memory organization of 512M × 16 bits, enabling high bandwidth and efficient parallel data transfer.<br><br>The device operates using DDR3L (low-voltage DDR3) technology with a typical supply voltage of 1.35V, significantly reducing power consumption compared to standard DDR3 while maintaining high-speed performance. It supports data rates up to approximately 1600 Mbps, making it suitable for demanding applications such as networking, industrial computing, and multimedia systems.<br><br>Built on an advanced 8-bank architecture with 8n prefetch, the H5TC8G63AFR-PBA enables efficient concurrent memory operations and improved throughput. It supports key features such as programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh, ensuring reliable and flexible memory management.<br><br>The device incorporates a fully synchronous interface with differential clock inputs (CK/CK#) and data strobes (DQS), ensuring signal integrity and stable operation at high frequencies. Additional features such as on-die termination (ODT), ZQ calibration, and DLL alignment further enhance performance and simplify high-speed PCB design.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC8G63AFR-PBA is optimized for high-density PCB layouts and space-constrained applications. It supports both commercial and industrial temperature ranges, making it suitable for demanding environments.<br><br>The H5TC8G63AFR-PBA is widely used in applications such as embedded systems, industrial automation, networking equipment, telecommunications, consumer electronics, and FPGA/SoC memory expansion, where high-speed, high-capacity, and low-power volatile memory is essential.
H5TC8G63AFR-PBA

Description: The H5TC8G63AFR-PBA is a high-density 8Gbit DDR3L SDRAM memory IC developed by SK Hynix, d ...
Package: T&R | MOQ: 250 | MPQ: 250

H5TC4G63DJR-PBA / The H5TC4G63DJR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hynix, designed for embedded systems, industrial electronics, and high-speed computing applications. It features a memory organization of 256M × 16 bits, enabling efficient parallel data transfer and high bandwidth performance.<br><br>The device utilizes DDR3L (low-voltage DDR3) technology, operating at a typical supply voltage of 1.35V, which significantly reduces power consumption compared to standard DDR3 memory while maintaining high-speed operation. It supports data rates up to approximately 1600 Mbps, making it suitable for demanding applications requiring fast and reliable memory access.<br><br>Built on an advanced 8-bank architecture with 8n prefetch, the H5TC4G63DJR-PBA enables efficient concurrent operations and improved memory throughput. It supports essential features such as programmable CAS latency, burst read/write operations, auto-refresh, and self-refresh, ensuring stable and efficient performance in dynamic memory environments.<br><br>The device incorporates a fully synchronous interface with differential clocking (CK/CK#) and data strobe signals (DQS), ensuring signal integrity and reliable operation at high frequencies. Additional features such as on-die termination (ODT), data masking (DM), and DLL alignment enhance performance and simplify high-speed PCB design.<br><br>Packaged in a compact 96-ball FBGA form factor, the H5TC4G63DJR-PBA is optimized for high-density PCB layouts and space-constrained designs. It typically supports operation across commercial and industrial temperature ranges, ensuring reliable performance in demanding environments.<br><br>The H5TC4G63DJR-PBA is widely used in applications such as embedded systems, networking equipment, industrial automation, telecommunications, consumer electronics, and FPGA/SoC memory expansion, where high-speed and low-power volatile memory is essential.
H5TC4G63DJR-PBA

Description: The H5TC4G63DJR-PBA is a high-performance 4Gbit DDR3L SDRAM memory IC developed by SK Hyni ...
Package: T&R | MOQ: 250 | MPQ: 250













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