NT5CB256M8GN-DI
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| Part Number | NT5CB256M8GN-DI |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5CB256M8GN-DI is a high-performance 2Gbit DDR3 synchronous DRAM developed by Nanya Technology, designed for embedded systems, industrial electronics, and computing applications requiring reliable memory bandwidth and stable operation. The device is organized as 256M x 8 bits and features an advanced 8-bank internal architecture, enabling parallel memory operations and improved data throughput. It utilizes a double data rate (DDR3) interface, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. Operating at a nominal voltage of 1.5V, the NT5CB256M8GN-DI supports data rates up to 1600 Mbps with a clock frequency around 800 MHz, making it suitable for high-speed applications while maintaining balanced power consumption. The device supports key features such as programmable burst lengths, auto-refresh, self-refresh, and power-down modes, ensuring reliable data integrity and efficient operation across various system conditions. Packaged in a compact 78-ball FBGA surface-mount form factor, the NT5CB256M8GN-DI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal performance. The NT5CB256M8GN-DI is widely used in embedded systems, networking equipment, industrial controllers, consumer electronics, and computing platforms where stable and high-speed volatile memory is required. |
| Product Group | SDRAM |
| MOQ | 2000 pcs |
| SPQ | 2000 pcs |
| Figure/Case | FBGA-78 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NT5CB256M8GN-DI
NT5CB256M8GN-DI