NT5CC256M16ER-DI
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| Part Number | NT5CC256M16ER-DI |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5CC256M16ER-DI is a high-density 4Gbit DDR3L SDRAM developed by Nanya Technology, engineered for low-power, high-speed memory applications in embedded systems and advanced digital platforms. It features a memory organization of 256M × 16 bits, enabling efficient data processing and high bandwidth performance. This device utilizes a DDR3L architecture, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing throughput compared to conventional SDRAM technologies. The NT5CC256M16ER-DI operates at a reduced supply voltage of approximately 1.35V, minimizing power consumption and heat generation while also supporting 1.5V compatibility for flexible system integration. It supports high-speed operation up to approximately 1600 Mbps, making it suitable for performance-critical applications requiring fast and reliable memory access. Advanced features include on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture, ensuring improved signal integrity and stable operation in high-speed environments. Packaged in a compact 96-ball FBGA surface-mount form factor, the NT5CC256M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. The NT5CC256M16ER-DI is widely used in applications such as embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics, where low power consumption and high-capacity volatile memory are essential. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA-96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NT5CC256M16ER-DI
NT5CC256M16ER-DI