MT41K512M16TW-107
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| Part Number | MT41K512M16TW-107 |
|---|---|
| Manufacturer |
 Micron
|
| Description | The MT41K512M16TW-107 is a high-density 8Gbit DDR3L synchronous DRAM (SDRAM) developed by Micron Technology, designed for high-performance embedded systems, networking equipment, and industrial applications. It features a memory organization of 512M × 16 bits, enabling large-capacity data storage and efficient parallel processing. The device utilizes a double data rate (DDR3L) architecture with 8n prefetch, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock frequencies up to approximately 933 MHz (1866 MT/s), making it suitable for high-speed computing and communication systems. Built with an advanced 8-bank internal architecture, the MT41K512M16TW-107 enables concurrent memory operations and improved system throughput. It supports programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT), providing flexibility for modern memory controller designs. The device operates within a low voltage range of 1.283V to 1.45V (typ. 1.35V), reducing power consumption while maintaining high performance, and is compatible with standard 1.5V DDR3 systems. Packaged in a compact 96-ball FBGA surface-mount form factor, the MT41K512M16TW-107 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. The MT41K512M16TW-107 is widely used in applications such as embedded systems, industrial automation, networking devices, automotive electronics, and high-performance computing platforms, where high-speed, low-power, and high-capacity volatile memory is required. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA 96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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MT41K512M16TW-107
MT41K512M16TW-107