The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
| Part Number | NT6CL256M32AM-H1 |
|---|---|
| Manufacturer |
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| Description | The NT6CL256M32AM-H1 is a high-performance 8Gbit Mobile DDR3 SDRAM (LPDDR3) developed by Nanya Technology, designed for mobile, embedded, and high-efficiency computing applications requiring low power consumption and high data throughput. The device is organized as 256M x 32 bits and features an advanced 8-bank internal architecture, enabling parallel memory operations and improved bandwidth efficiency. It utilizes a double data rate interface, allowing data transfer on both clock edges for high-speed performance. Operating at a nominal voltage of 1.2V, the NT6CL256M32AM-H1 supports data rates up to 1866 Mbps, making it suitable for high-speed and energy-efficient system designs. It also supports a wide operating temperature range, ensuring stable performance in various environments. The device integrates advanced power-saving features such as self-refresh, deep power-down modes, and optimized standby operation, helping to reduce overall system power consumption while maintaining data integrity. Packaged in a compact 178-ball FBGA surface-mount form factor, the NT6CL256M32AM-H1 is optimized for high-density PCB layouts and reliable signal integrity in modern electronic systems. The NT6CL256M32AM-H1 is widely used in smartphones, tablets, embedded systems, IoT devices, industrial electronics, and communication equipment where low power consumption and high-speed volatile memory are required. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA-178 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |