NT5AD256M16E4-JRI
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| Part Number | NT5AD256M16E4-JRI |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5AD256M16E4-JRI is a high-performance 4Gbit DDR4 synchronous DRAM developed by Nanya Technology, designed for industrial, embedded, and high-speed computing applications requiring reliable bandwidth and low power consumption. The device is organized as 256M x 16 bits and features an advanced 8-bank internal architecture, enabling parallel memory operations and improved data throughput. It utilizes a double data rate (DDR4) interface, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. Operating at a nominal voltage of 1.2V, the NT5AD256M16E4-JRI supports data rates up to 3200 Mbps, making it suitable for high-speed and energy-efficient system designs. It is optimized for stable operation and reduced power consumption compared to earlier memory generations. The device is specified for an extended industrial temperature range of -40°C to +95°C, ensuring reliable performance in harsh environments and long-life applications. It also supports features such as auto-refresh, self-refresh, and power-down modes to maintain data integrity and optimize system power management. Packaged in a compact 96-ball FBGA surface-mount form factor, the NT5AD256M16E4-JRI is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency. The NT5AD256M16E4-JRI is widely used in industrial controllers, networking equipment, embedded systems, automotive electronics, and computing platforms where high-speed volatile memory and reliable operation are required. |
| Product Group | SDRAM |
| MOQ | 2000 pcs |
| SPQ | 2000 pcs |
| Figure/Case | FBGA-96 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NT5AD256M16E4-JRI
NT5AD256M16E4-JRI