The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
| Part Number | NT5CC256M16DP-DI |
|---|---|
| Manufacturer |
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| Description | The NT5CC256M16DP-DI is a high-density 4Gbit DDR3 SDRAM developed by Nanya Technology, designed for high-performance computing, embedded systems, and data-intensive applications. It features a memory organization of 256M × 16 bits, delivering high bandwidth and efficient data throughput. This device utilizes DDR3 architecture, enabling data transfers on both rising and falling edges of the clock signal to significantly increase performance compared to traditional SDRAM technologies. The NT5CC256M16DP-DI supports high-speed operation typically up to 1600 Mbps, making it suitable for applications requiring fast and reliable memory access and low latency performance. Operating at a nominal supply voltage of 1.5V, the device provides a balance between performance and power efficiency, and is compatible with SSTL_15 signaling for stable communication with modern memory controllers. Advanced features such as on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture enhance signal integrity and ensure reliable operation in high-speed systems. Packaged in a compact 96-ball FBGA surface-mount form factor, the NT5CC256M16DP-DI is ideal for high-density PCB layouts and space-constrained electronic designs. The NT5CC256M16DP-DI is widely used in applications such as embedded computing, networking equipment, industrial automation, consumer electronics, and high-performance digital systems, where high-capacity and reliable volatile memory is required. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA-96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |