NT5CB128M16JR-FL
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| Part Number | NT5CB128M16JR-FL |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5CB128M16JR-FL is a high-performance 2Gbit DDR3 synchronous DRAM developed by Nanya Technology, designed for embedded systems, computing platforms, and high-speed memory applications requiring reliable bandwidth and stable operation. The device is organized as 128M x 16 bits and features an advanced 8-bank internal architecture, enabling parallel memory operations and improved data throughput. It utilizes a double data rate (DDR) interface, allowing data transfer on both rising and falling edges of the clock for enhanced efficiency. Operating at a nominal voltage of 1.5V, the NT5CB128M16JR-FL supports data rates up to 2133 Mbps with a clock frequency around 1066 MHz, making it suitable for high-speed and bandwidth-intensive applications. The device supports key features such as programmable burst lengths, auto-refresh, self-refresh, and power-down modes, ensuring data integrity and efficient power management in various system conditions. Packaged in a compact 96-ball FBGA surface-mount form factor, the NT5CB128M16JR-FL is optimized for high-density PCB layouts while maintaining reliable signal integrity and thermal performance. The NT5CB128M16JR-FL is widely used in industrial controllers, networking equipment, embedded systems, computing devices, and consumer electronics where high-speed volatile memory and stable performance are required. |
| Product Group | SDRAM |
| MOQ | 2000 pcs |
| SPQ | 2000 pcs |
| Figure/Case | FBGA-96 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NT5CB128M16JR-FL
NT5CB128M16JR-FL