NT5CC512M16JR-DI
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| Part Number | NT5CC512M16JR-DI |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5CC512M16JR-DI is a high-performance 8Gbit DDR3L SDRAM developed by Nanya Technology, engineered for low-power, high-speed memory applications in embedded and industrial systems. It features a memory organization of 512M × 16 bits, delivering high bandwidth and efficient data throughput. This device utilizes a DDR3L architecture, enabling data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to traditional SDRAM technologies. The NT5CC512M16JR-DI operates at a nominal voltage of 1.35V, reducing power consumption and thermal output while maintaining compatibility with 1.5V operation in flexible system designs. It supports high-speed operation up to approximately 1600 Mbps, making it suitable for applications requiring fast and reliable memory access and low latency. Advanced features such as on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture ensure improved signal integrity and stable operation in high-speed environments. Packaged in a compact 96-ball FBGA surface-mount form factor, the NT5CC512M16JR-DI is optimized for high-density PCB layouts and space-constrained designs. The NT5CC512M16JR-DI is widely used in applications such as embedded systems, networking devices, industrial controllers, portable electronics, and consumer products, where low power consumption and high-capacity volatile memory are critical. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA-96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NT5CC512M16JR-DI
NT5CC512M16JR-DI