The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
| Part Number | NT5CC512M16DP-DI |
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| Manufacturer |
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| Description | The NT5CC512M16DP-DI is a high-density 8Gbit DDR3 SDRAM developed by Nanya Technology, engineered for high-performance computing, embedded systems, and data-intensive applications. It features a memory organization of 512M × 16 bits, delivering high bandwidth and efficient data throughput for demanding applications. This device utilizes a DDR3 architecture, enabling data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM technologies. The NT5CC512M16DP-DI supports high-speed operation typically up to 1600 Mbps, making it suitable for applications requiring fast and reliable memory access with low latency. Operating at a nominal supply voltage of 1.5V, the device provides a balance between power efficiency and performance, and is compatible with SSTL_15 signaling for stable communication with modern memory controllers. Advanced features such as on-die termination (ODT), auto-refresh, self-refresh, and fly-by command/address architecture enhance signal integrity and ensure reliable operation in high-speed systems. Packaged in a compact 96-ball FBGA surface-mount form factor, the NT5CC512M16DP-DI is ideal for high-density PCB layouts and space-constrained designs. The NT5CC512M16DP-DI is widely used in applications such as embedded computing, networking equipment, industrial automation, consumer electronics, and high-performance digital systems, where high-capacity and reliable volatile memory is essential. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA-96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |