NT5AD512M16C4-JR
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| Part Number | NT5AD512M16C4-JR |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5AD512M16C4-JR is a high-performance 8Gbit DDR4 synchronous DRAM developed by Nanya Technology, designed for embedded systems, industrial electronics, and high-speed computing applications requiring reliable bandwidth and low power consumption. The device is organized as 512M x 16 bits and features an advanced multi-bank architecture with bank grouping, enabling parallel operations and improved data throughput. It utilizes a double data rate (DDR4) interface, allowing data transfer on both rising and falling edges of the clock signal for enhanced efficiency. Operating at a nominal voltage of 1.2V, the NT5AD512M16C4-JR supports data rates up to 3200 Mbps, making it suitable for high-speed and energy-efficient system designs. Its architecture is optimized for improved performance and reduced power consumption compared to earlier DDR generations. The device includes advanced features such as on-die termination (ODT), auto-refresh, self-refresh, and temperature-compensated refresh, ensuring reliable data integrity and stable operation across varying environmental conditions. Packaged in a compact 96-ball FBGA surface-mount form factor, the NT5AD512M16C4-JR is optimized for high-density PCB layouts while maintaining strong signal integrity and thermal efficiency. The NT5AD512M16C4-JR is widely used in industrial controllers, networking equipment, embedded systems, consumer electronics, and computing platforms where high-speed volatile memory and dependable performance are required. |
| Product Group | SDRAM |
| MOQ | 2000 pcs |
| SPQ | 2000 pcs |
| Figure/Case | FBGA-96 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NT5AD512M16C4-JR
NT5AD512M16C4-JR