NT5CC128M16ER-DI
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| Part Number | NT5CC128M16ER-DI |
|---|---|
| Manufacturer |
 Nanya
|
| Description | The NT5CC128M16ER-DI is a high-efficiency 2Gbit DDR3L SDRAM developed by Nanya Technology, designed for low-power, high-speed memory applications in embedded systems and advanced digital platforms. It features a memory organization of 128M × 16 bits, delivering reliable data throughput and high bandwidth performance. This device utilizes a double data rate (DDR3L) architecture, allowing data transfers on both rising and falling edges of the clock signal, significantly increasing performance compared to conventional SDRAM solutions. The NT5CC128M16ER-DI operates at a reduced supply voltage of approximately 1.35V, offering improved power efficiency and reduced heat generation, making it ideal for energy-sensitive applications. It is also backward compatible with 1.5V operation in many system designs. Supporting high-speed operation up to approximately 1600 Mbps, the device is suitable for performance-demanding applications requiring fast and stable memory access. It incorporates advanced features such as on-die termination (ODT), auto-refresh, self-refresh, and fly-by topology, enhancing signal integrity and ensuring reliable system performance. Packaged in a compact 96-ball FBGA surface-mount form factor, the NT5CC128M16ER-DI is optimized for high-density PCB layouts and modern electronic designs. The NT5CC128M16ER-DI is widely used in applications such as embedded computing, networking equipment, industrial automation, portable devices, and consumer electronics, where low power consumption and high-speed volatile memory are critical requirements. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA-96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NT5CC128M16ER-DI
NT5CC128M16ER-DI