Products Memory AS4C64M16D2A-25BIN


AS4C64M16D2A-25BIN


Part Number AS4C64M16D2A-25BIN
Manufacturer Alliance Semiconductor Official Vector Logo Alliance Semiconductor
Description ​The AS4C64M16D2A-25BIN is a high-speed, 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Alliance Memory, organized as 64 million words by 16 bits (64M x 16). Designed for high-performance applications, it features a double-data-rate architecture with an 8n prefetch, enabling data transfer rates up to 400 MHz. The device operates with a supply voltage range of 1.7V to 1.9V and supports fully synchronous operations with a differential clock (CK and CK#). It includes eight internal banks for concurrent operation and offers programmable CAS latencies of 3, 4, and 5. Additional features encompass bidirectional single/differential data strobes (DQS and DQS#), on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and automatic self-refresh with a refresh period of 7.8 µs. The AS4C64M16D2A-25BIN is housed in an 84-ball FBGA package and operates within an industrial temperature range of -40°C to 95°C, making it suitable for various applications requiring reliable and efficient memory solutions. T&R Part Number: ​AS4C64M16D2A-25BINTR
Product Group Memory
MOQ 418 pcs
SPQ 209 pcs
Figure/Case 84-FBGA
Package TRAY Pack
PDF PDF Datasheet
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ParameterValueNotes
Memory Configuration64 Meg x 16Organized as 64 million words by 16 bits
Memory Size1 GbitTotal memory capacity
Clock Frequency (Max)400 MHzMaximum operating clock frequency
Access Time400 psTime delay between address input and data output
Supply Voltage (VDD)1.7 V to 1.9 VNominal operating voltage range
Supply Current (Max)170 mAMaximum current consumption during operation
Operating Temperature Range-40°C to +95°CSuitable for industrial applications
Package Type84-ball FBGASurface-mount package with 84 pins
Data Bus Width16 bitsWidth of the data bus
Write Cycle Time (Word/Page)15 nsTime required to complete a write cycle
Input Logic Level High (VIH)0.7 x VDD to VDD + 0.3 VVoltage range recognized as a logical high
Input Logic Level Low (VIL)-0.3 V to 0.3 x VDDVoltage range recognized as a logical low
Output Logic Level High (VOH)VDD - 0.1 V (min)Minimum voltage level for logical high output
Output Logic Level Low (VOL)0.1 V (max)Maximum voltage level for logical low output
Refresh Period7.8 µsTime interval for refresh cycles
On-Die Termination (ODT)SupportedAllows impedance matching on the chip
Off-Chip Driver (OCD) Impedance AdjustmentSupportedEnables adjustment of output driver impedance







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