Part Number | AS4C64M16D2A-25BIN |
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Manufacturer |
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Description | The AS4C64M16D2A-25BIN is a high-speed, 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Alliance Memory, organized as 64 million words by 16 bits (64M x 16). Designed for high-performance applications, it features a double-data-rate architecture with an 8n prefetch, enabling data transfer rates up to 400 MHz. The device operates with a supply voltage range of 1.7V to 1.9V and supports fully synchronous operations with a differential clock (CK and CK#). It includes eight internal banks for concurrent operation and offers programmable CAS latencies of 3, 4, and 5. Additional features encompass bidirectional single/differential data strobes (DQS and DQS#), on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and automatic self-refresh with a refresh period of 7.8 µs. The AS4C64M16D2A-25BIN is housed in an 84-ball FBGA package and operates within an industrial temperature range of -40°C to 95°C, making it suitable for various applications requiring reliable and efficient memory solutions. T&R Part Number: AS4C64M16D2A-25BINTR |
Product Group | Memory |
MOQ | 418 pcs |
SPQ | 209 pcs |
Figure/Case | 84-FBGA |
Package | TRAY Pack |
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Ship From | Hong Kong |
Shipment Way | DHL / Fedex / TNT / UPS / Others |
Delivery Term | Ex-Works |
Send RFQ | sales@signalhk.com |
Parameter | Value | Notes |
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Memory Configuration | 64 Meg x 16 | Organized as 64 million words by 16 bits |
Memory Size | 1 Gbit | Total memory capacity |
Clock Frequency (Max) | 400 MHz | Maximum operating clock frequency |
Access Time | 400 ps | Time delay between address input and data output |
Supply Voltage (VDD) | 1.7 V to 1.9 V | Nominal operating voltage range |
Supply Current (Max) | 170 mA | Maximum current consumption during operation |
Operating Temperature Range | -40°C to +95°C | Suitable for industrial applications |
Package Type | 84-ball FBGA | Surface-mount package with 84 pins |
Data Bus Width | 16 bits | Width of the data bus |
Write Cycle Time (Word/Page) | 15 ns | Time required to complete a write cycle |
Input Logic Level High (VIH) | 0.7 x VDD to VDD + 0.3 V | Voltage range recognized as a logical high |
Input Logic Level Low (VIL) | -0.3 V to 0.3 x VDD | Voltage range recognized as a logical low |
Output Logic Level High (VOH) | VDD - 0.1 V (min) | Minimum voltage level for logical high output |
Output Logic Level Low (VOL) | 0.1 V (max) | Maximum voltage level for logical low output |
Refresh Period | 7.8 µs | Time interval for refresh cycles |
On-Die Termination (ODT) | Supported | Allows impedance matching on the chip |
Off-Chip Driver (OCD) Impedance Adjustment | Supported | Enables adjustment of output driver impedance |
Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong. |