IS46DR16640B-25EBLA1
| Part Number | IS46DR16640B-25EBLA1 |
|---|---|
| Manufacturer |
 ISSI
|
| Description | The IS46DR16640B-25EBLA1 is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 85°C, making it suitable for various applications requiring high-speed and reliable memory solutions. |
| Product Group | Memory |
| MOQ | 418 pcs |
| SPQ | 209 pcs |
| Figure/Case | 84-TWBGA |
| Package | TRAY Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
| Attribute | Value |
|---|---|
| Memory Type | DDR2 SDRAM |
| Memory Size | 1 Gbit (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Access Time | 400 ps |
| Write Cycle Time (Word/Page) | 15 ns |
| Supply Voltage (Min) | 1.7 V |
| Supply Voltage (Max) | 1.9 V |
| Operating Temperature | -40°C to 85°C |
| Package Type | 84-TWBGA (8x12.5) |
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IS46DR16640B-25EBLA1
IS46DR16640B-25EBLA1