Products Memory IS43DR16640B-25DBLI


IS43DR16640B-25DBLI


Part Number IS43DR16640B-25DBLI
Manufacturer ISSI Official Vector Logo ISSI
Description ​The IS43DR16640B-25DBLI is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device functions within a supply voltage range of 1.7V to 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operation and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features comprise on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and automatic and controlled precharge commands. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within a temperature range of -40°C to +85°C, making it suitable for various industrial applications requiring high-speed and reliable memory solutions. ​
Product Group Memory
MOQ 418 pcs
SPQ 209 pcs
Figure/Case 84-TFBGA
Package TRAY Pack
PDF PDF Datasheet
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FeatureDescription
Memory TypeDDR2 SDRAM
Memory Size1 Gbit (64M x 16)
Data Bus Width16 bits
Clock Frequency (Max)400 MHz
Access Time400 ps
Supply Voltage Range (VDD)1.7 V to 1.9 V
Supply Current (Max)110 mA
Write Cycle Time15 ns
Operating Temperature Range-40°C to +85°C
Package Type84-TWBGA (8x12.5 mm)
Mounting TypeSurface Mount
Interface TypeParallel
Organization64M x 16
TechnologyCMOS
FeaturesOn-Die Termination (ODT), Auto/Self Refresh, 4-bit Prefetch Architecture
RoHS ComplianceRoHS Compliant







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