Products Memory MT47H64M16NF-25E:M


MT47H64M16NF-25E:M


Part Number MT47H64M16NF-25E:M
Manufacturer Micron Official Vector Logo Micron
Description ​The MT47H64M16NF-25E:M is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module from Micron Technology Inc., offering a storage capacity of 1 gigabit (Gb). It is organized as 64 million words by 16 bits (64M x 16), providing a 16-bit data bus width. This module operates with a supply voltage of 1.8V ±0.1V and features an access time of 400 picoseconds, ensuring efficient data retrieval. It supports a maximum clock frequency of 400 MHz, corresponding to a data transfer rate of 800 megabits per second per pin. The write cycle time for both word and page operations is 15 nanoseconds. Housed in an 84-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 8 x 12.5 mm, the module is suitable for surface-mount applications. It is rated for an operating temperature range of -40°C to 105°C, making it suitable for industrial applications. Key features include programmable CAS latency (CL) of 3, 4, or 5, selectable burst lengths of 4 or 8, on-die termination (ODT), and compliance with JEDEC clock jitter specifications. ​
Product Group Memory
MOQ 1368 pcs
SPQ 1368 pcs
Figure/Case 84-TFBGA
Package TRAY Pack
PDF PDF Datasheet
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AttributeValue
Memory TypeDDR2 SDRAM
Memory Size1 Gbit (64M x 16)
Memory InterfaceParallel
Clock Frequency400 MHz
Access Time400 ps
Write Cycle Time (Word/Page)15 ns
Supply Voltage (Min)1.7 V
Supply Voltage (Max)1.9 V
Operating Temperature0°C to 85°C
Package Type84-FBGA (8x12.5)
Mounting TypeSurface Mount
Moisture Sensitivity Level3 (168 Hours)







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