Products SDRAM IS43DR16640B-25EBL


IS43DR16640B-25EBL

IS43DR16640B-25EBL, SDRAM, from ISSI in Stock Hong Kong The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organiz

The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.


GET QUOTE NOW!

Part Number IS43DR16640B-25EBL
Manufacturer ISSI Official Vector Logo ISSI
Description The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at clock frequencies up to 400 MHz, achieving data transfer rates up to 800 megabits per second per pin. The device functions within a supply voltage range of 1.7V to 1.9V and offers an access time of 450 picoseconds. It features a 4-bit prefetch architecture and supports programmable CAS latencies of 3, 4, 5, 6, and 7, along with programmable additive latencies from 0 to 6. The SDRAM includes eight internal banks for concurrent operation and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of 0°C to 70°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​Alternative P/N: IS43DR16640B-25EBLI
Product Group SDRAM
MOQ 418 pcs
SPQ 209 pcs
Figure/Case 84-TWBGA
Package TRAY Pack
PDF PDF Datasheet
Ship From Hong Kong
Shipment Way DHL / Fedex / TNT / UPS / Others
Delivery Term Ex-Works
Send RFQ sales@signalhk.com




AttributeValue
Memory TypeDDR2 SDRAM
Memory Size1 Gbit (64M x 16)
Memory InterfaceParallel
Clock Frequency400 MHz
Access Time450 ps
Write Cycle Time (Word/Page)15 ns
Supply Voltage (Min)1.7 V
Supply Voltage (Max)1.9 V
Operating Temperature0°C to 70°C
Package Type84-TWBGA (8x12.5)







Request quotation for
IS43DR16640B-25EBL
CAPTCHA Image












info@signalhk.com

+852 2417 2366

Room 1304, 13/F, Allways Centre, 468 Jaffe Road, Causeway Bay, Hong Kong.


SIGNAL-HK WIKI BLOG

Copyright © 2008-2024 Signal HK Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Signal HK Limited Terms of Use and Privacy Policy

Cookie Policy | MSN EQV Parts |
IS43DR16640B-25EBL datasheet, IS43DR16640B-25EBL specifications, IS43DR16640B-25EBL features, IS43DR16640B-25EBL pinout, IS43DR16640B-25EBL Arduino, IS43DR16640B-25EBL price, IS43DR16640B-25EBL circuit diagram, IS43DR16640B-25EBL development board, IS43DR16640B-25EBL app IS43DR16640B-25EBL Application IS43DR16640B-25EBL Stock Quote IS43DR16640B-25EBL Best Price IS43DR16640B-25EBL Free Stock IS43DR16640B-25EBL Lead Time IS43DR16640B-25EBL Delivery Time IS43DR16640B-25EBL Stock , The IS43DR16640B-25EBL is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16).