Products Memory IS46DR16640C-25DBLA2-TR


IS46DR16640C-25DBLA2-TR


Part Number IS46DR16640C-25DBLA2-TR
Manufacturer ISSI Official Vector Logo ISSI
Description ​The IS46DR16640C-25DBLA2-TR is a 1-gigabit (Gb) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) from Integrated Silicon Solution Inc. (ISSI), organized as 64 million words by 16 bits (64M x 16). It operates at a clock frequency of up to 400 MHz, delivering data transfer rates up to 800 megabits per second per pin. The device requires a supply voltage between 1.7V and 1.9V and offers an access time of 400 picoseconds. It features a 4-bit prefetch architecture and supports a write cycle time of 15 nanoseconds. The SDRAM includes eight internal banks for concurrent operations and supports programmable burst lengths of 4 and 8, with both sequential and interleave burst types. Additional features include on-die termination (ODT), automatic and controlled precharge commands, auto-refresh and self-refresh modes, and a refresh interval of 7.8 µs. The device is housed in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package measuring 8 x 12.5 mm and operates within an industrial temperature range of -40°C to 105°C, making it suitable for various applications requiring high-speed and reliable memory solutions. ​
Product Group Memory
MOQ 2500 pcs
SPQ 2500 pcs
Figure/Case 84-TWBGA
Package T&R Pack
PDF PDF Datasheet
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AttributeValue
Memory TypeDDR2 SDRAM
Memory Size1 Gbit (64M x 16)
Memory InterfaceParallel
Clock Frequency400 MHz
Access Time400 ps
Write Cycle Time (Word/Page)15 ns
Supply Voltage (Min)1.7 V
Supply Voltage (Max)1.9 V
Operating Temperature-40°C to 105°C
Package Type84-TFBGA (8x12.5)
PackagingTape & Reel (TR)
Mounting TypeSurface Mount
Moisture Sensitivity Level3 (168 Hours)







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