MT41K128M16LY-125
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| Part Number | MT41K128M16LY-125 |
|---|---|
| Manufacturer |
 Micron
|
| Description | The MT41K128M16LY-125 is a high-performance 2Gbit DDR3L synchronous DRAM (SDRAM) developed by Micron Technology, designed for embedded systems, industrial applications, and high-speed digital platforms. It features a memory organization of 128M × 16 bits, providing efficient parallel data processing and reliable high-density storage. The device utilizes a double data rate (DDR3L) architecture with 8n prefetch, enabling data transfer on both rising and falling edges of the clock signal for increased bandwidth. It supports data rates up to 1600 MT/s (800 MHz clock), ensuring fast and efficient memory performance. Built with an advanced 8-bank internal architecture, the MT41K128M16LY-125 enables concurrent memory operations and improved system throughput. It supports programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT), providing flexibility for modern memory controller designs. The device operates within a low voltage range of 1.283V to 1.45V (typ. 1.35V), reducing power consumption while maintaining high performance, and is backward compatible with 1.5V DDR3 systems. Packaged in a compact 96-ball FBGA surface-mount form factor, the MT41K128M16LY-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. The MT41K128M16LY-125 is widely used in applications such as embedded systems, industrial automation, networking equipment, automotive electronics, and consumer devices, where high-speed, low-power, and high-reliability volatile memory is required. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA 96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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MT41K128M16LY-125
MT41K128M16LY-125