MT41K1G16HA-125
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| Part Number | MT41K1G16HA-125 |
|---|---|
| Manufacturer |
 Micron
|
| Description | The MT41K1G16HA-125 is a high-density 16Gbit DDR3L synchronous DRAM (SDRAM) developed by Micron Technology, designed for high-performance embedded systems, networking equipment, and advanced computing applications. It features a memory organization of 1G × 16 bits, enabling large-capacity data storage and efficient parallel processing. The device utilizes a double data rate (DDR3L) architecture with 8n prefetch, allowing data transfer on both rising and falling edges of the clock signal, significantly increasing bandwidth compared to conventional SDRAM. It supports clock frequencies up to approximately 800 MHz (1600 MT/s), ensuring high-speed operation in demanding systems. Built with an advanced 8-bank internal architecture and dual-rank (TwinDie) configuration, the MT41K1G16HA-125 enables concurrent operations and improved memory throughput. It supports programmable CAS latency, burst length (4, 8), and on-die termination (ODT), providing flexibility for modern memory controller designs. The device operates within a low voltage range of 1.283V to 1.45V (typ. 1.35V), reducing power consumption while maintaining high performance, and remains compatible with 1.5V DDR3 systems. Packaged in a compact 96-ball FBGA surface-mount form factor, the MT41K1G16HA-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. The MT41K1G16HA-125 is widely used in applications such as embedded systems, industrial automation, networking infrastructure, data processing systems, and high-performance computing platforms, where high-speed, low-power, and high-capacity volatile memory is required. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA 96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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MT41K1G16HA-125
MT41K1G16HA-125