MT41K256M16HA-125
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| Part Number | MT41K256M16HA-125 |
|---|---|
| Manufacturer |
 Micron
|
| Description | The MT41K256M16HA-125 is a high-performance 4Gbit DDR3L synchronous DRAM (SDRAM) developed by Micron Technology, designed for embedded systems, networking equipment, and industrial applications requiring high-speed and reliable memory solutions. It features a memory organization of 256M × 16 bits, enabling efficient parallel data processing and high-density storage. The device operates using a double data rate (DDR3L) architecture with 8n prefetch, allowing data transfers on both rising and falling edges of the clock signal to significantly increase bandwidth. It supports clock speeds up to 800 MHz (1600 MT/s data rate), ensuring high-speed operation in demanding applications. Built with an advanced 8-bank internal architecture, the MT41K256M16HA-125 enables concurrent memory operations and improved system efficiency. It supports programmable CAS latency, burst length (4, 8), additive latency, and on-die termination (ODT), providing flexibility for modern memory controller designs. The device operates within a low voltage range of 1.283V to 1.45V (typ. 1.35V), reducing power consumption while maintaining high performance, and is backward compatible with standard 1.5V DDR3 systems. Packaged in a compact 96-ball FBGA surface-mount form factor, the MT41K256M16HA-125 is optimized for high-density PCB layouts and reliable signal integrity in high-speed designs. The MT41K256M16HA-125 is widely used in applications such as embedded systems, industrial automation, networking devices, automotive electronics, and high-performance computing platforms, where high-speed, low-power, and high-capacity volatile memory is required. |
| Product Group | SDRAM |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | FBGA 96 |
| Package | TRAY Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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MT41K256M16HA-125
MT41K256M16HA-125