All Products Transistor

BCP56-16T3G / The BCP56-16T3G is an NPN silicon epitaxial bipolar junction transistor designed for medium power amplification and switching applications. It features a collector-emitter voltage (VCEO) of 80V and collector current (IC) up to 1A, with power dissipation of approximately 1.5W. The device offers DC current gain (hFE) in the range of 100 to 250 (group -16) and a transition frequency (fT) of about 130 MHz, enabling efficient high-speed operation . It provides low collector-emitter saturation voltage around 0.5V, ensuring reduced conduction losses. The transistor supports maximum collector-base voltage of 100V and emitter-base voltage of 5V, with operating junction temperature range from -65°C to +150°C . Packaged in SOT-223, it offers good thermal performance and is suitable for audio amplifiers, driver stages, power switching, and general-purpose analog applications.
BCP56-16T3G

Description: The BCP56-16T3G is an NPN silicon epitaxial bipolar junction transistor designed for mediu ...
Package: T&R | MOQ: 4000 | MPQ: 4000

2N7002,215 / The 2N7002,215 is an N-channel enhancement-mode MOSFET designed for low-power switching and amplification applications. It features a drain-source voltage (VDS) of 60V and continuous drain current up to 300 mA, with low on-resistance of approximately 5 Ω at VGS = 10V. The device supports gate-source voltage up to ±20V and has a threshold voltage range of approximately 1V to 3V, enabling logic-level control. It offers fast switching characteristics with low gate charge (~2.5 nC) and low input capacitance (~50 pF), making it suitable for high-speed switching applications. The MOSFET has a total power dissipation of approximately 350 mW and operates over a temperature range of -55°C to +150°C. Packaged in SOT-23, it is ideal for load switching, level shifting, small signal amplification, and general-purpose switching applications in portable and embedded systems.
2N7002,215

Description: The 2N7002,215 is an N-channel enhancement-mode MOSFET designed for low-power switching an ...
Package: | MOQ: | MPQ:

FMMT619TA / The FMMT619TA is a high-performance NPN bipolar junction transistor designed for low saturation voltage and high current switching applications. It features a collector-emitter voltage (VCEO) of 50V and supports a high continuous collector current of up to 2A, with low saturation voltage typically below 200 mV at high current levels, ensuring efficient switching performance . The device provides high DC current gain (hFE) typically ≥200 at 1A and offers a transition frequency around 165 MHz, enabling fast switching and amplification . It has a maximum power dissipation of approximately 625 mW and very low collector leakage current (~100 nA), improving efficiency and reliability . The transistor operates over a wide temperature range of -55°C to +150°C and is packaged in a compact SOT-23-3 surface-mount form factor, making it suitable for space-constrained designs. Typical applications include MOSFET gate driving, DC-DC converters, LED drivers, and motor control circuits where high current and low loss are critical .
FMMT619TA

Description: The FMMT619TA is a high-performance NPN bipolar junction transistor designed for low satur ...
Package: T&R | MOQ: 3000 | MPQ: 3000

IRF7240TRPBF / The IRF7240TRPBF is a P-channel HEXFET® power MOSFET designed for high-efficiency power management and load switching applications. It features a drain-source voltage (VDS) of -40V and continuous drain current up to -10.5A, with very low on-resistance of approximately 15 mΩ at VGS = -10V, enabling minimal conduction losses and high efficiency . The device supports gate-source voltage up to ±20V and has a threshold voltage of around -1V to -3V, allowing logic-level operation. It offers typical gate charge of approximately 73 nC and power dissipation up to 2.5W, with fast switching performance suitable for high-frequency applications . The MOSFET operates over a wide temperature range of -55°C to +150°C and utilizes an optimized SOIC-8 package for improved thermal performance and compact PCB layout . It is widely used in battery management systems, DC-DC converters, and general power switching applications.
IRF7240TRPBF

Description: The IRF7240TRPBF is a P-channel HEXFET® power MOSFET designed for high-efficiency power m ...
Package: T&R | MOQ: 4000 | MPQ: 4000

SI4401FDY-T1-GE3 / The SI4401FDY-T1-GE3 is a P-channel TrenchFET® Gen III power MOSFET designed for high-efficiency switching and load management applications. It features a drain-source voltage (VDS) of -40V and continuous drain current up to -9.9A (TA) and -14A (TC), with low on-resistance of approximately 11.8 mΩ typical and 14.2 mΩ max at VGS = -10V, ensuring minimal conduction losses. The device supports gate-source voltage up to ±20V and has a threshold voltage range of approximately -1V to -2.3V, allowing logic-level drive compatibility. It offers fast switching performance with total gate charge around 66–100 nC and input capacitance approximately 4000 pF. Maximum power dissipation is about 2.5W (TA) to 5W (TC), and it operates over a wide temperature range from -55°C to +150°C. Packaged in SOIC-8, it is suitable for battery management, DC-DC converters, load switching, and power control circuits.
SI4401FDY-T1-GE3

Description: The SI4401FDY-T1-GE3 is a P-channel TrenchFET® Gen III power MOSFET designed for high-eff ...
Package: T&R | MOQ: 2500 | MPQ: 2500

FDS4435BZ / The FDS4435BZ is a P-channel enhancement-mode PowerTrench MOSFET designed for high-efficiency power management and load switching applications. It features a drain-source voltage (VDS) of -30V and continuous drain current of up to -8.8A, with very low on-resistance of approximately 20 mΩ at VGS = -10V and 35 mΩ at VGS = -4.5V, ensuring low conduction losses. The device supports a wide gate-source voltage range of ±25V and has a threshold voltage around -1V to -3V. It offers fast switching performance with gate charge around 40 nC and optimized trench technology for reduced switching losses. Maximum power dissipation is approximately 2.5W, and it operates over a temperature range of -55°C to +150°C . Packaged in SOIC-8, it is ideal for battery-powered systems, DC-DC converters, notebook power management, and load switching applications.
FDS4435BZ

Description: The FDS4435BZ is a P-channel enhancement-mode PowerTrench MOSFET designed for high-efficie ...
Package: T&R | MOQ: 2500 | MPQ: 2500

MDS3652URH / Single P-Channel Trench MOSFET, -30V, -11A, 17mOhm, MDS3652, Magnachip
MDS3652URH

Description: Single P-Channel Trench MOSFET, -30V, -11A, 17mOhm, MDS3652, Magnachip ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AO4882 / The AO4882 is a dual N-channel enhancement-mode power MOSFET designed using advanced trench technology for high efficiency and low switching losses. It features a drain-source voltage (VDS) of 40V and continuous drain current up to 8A per channel, with low on-resistance of typically 19 mΩ at VGS = 10V and 27 mΩ at VGS = 4.5V, enabling efficient power handling. The device supports gate-source voltage up to ±20V and has a low threshold voltage range of approximately 1.4V to 2.4V, making it suitable for logic-level applications. It offers fast switching performance with low gate charge (~6.5 nC at 10V) and low input capacitance (~415 pF), ensuring high-speed operation. Power dissipation is approximately 2W, and it operates over a wide temperature range of -55°C to +150°C. Packaged in SOIC-8, it integrates two MOSFETs in a compact footprint, making it ideal for DC-DC converters, load switching, battery management, and power control applications.
AO4882

Description: The AO4882 is a dual N-channel enhancement-mode power MOSFET designed using advanced trenc ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AO4459 / The AO4459 is a P-channel enhancement-mode power MOSFET designed for load switching and power management applications, utilizing advanced trench technology for low on-resistance and high efficiency. It features a drain-source voltage (VDS) of -30V and continuous drain current of up to -6.5A, with low RDS(on) typically below 46 mΩ at VGS = -10V, minimizing conduction losses. The device supports gate-source voltage up to ±20V and has a threshold voltage around -1V to -2.4V, enabling logic-level operation. It offers fast switching characteristics with low gate charge and rise time around 5–10 ns, making it suitable for high-frequency switching. Power dissipation is approximately 3.1W, and it operates over a wide temperature range from -55°C to +150°C. Packaged in SOIC-8, it is ideal for battery protection, load switching, DC-DC converters, and portable power applications.
AO4459

Description: The AO4459 is a P-channel enhancement-mode power MOSFET designed for load switching and po ...
Package: T&R | MOQ: 3000 | MPQ: 3000

DMN2029USD-13 / The DMN2029USD-13 is a dual N-channel enhancement-mode power MOSFET designed for high-efficiency switching and power management applications. It features a drain-source voltage (VDS) of 20V and continuous drain current of up to 5.8A per channel, with low on-resistance of approximately 25 mΩ at VGS = 4.5V, enabling reduced conduction losses. The device supports gate-source voltage up to ±8V and has a low threshold voltage around 1.5V, making it suitable for logic-level drive applications. It offers fast switching performance with typical gate charge around 10–18 nC and input capacitance approximately 1170 pF . The maximum power dissipation is about 1.2W, and it operates over a wide temperature range from -55°C to +150°C . Packaged in SOIC-8, it integrates two MOSFETs in a compact footprint, making it ideal for DC-DC converters, load switching, battery management, and power control circuits.
DMN2029USD-13

Description: The DMN2029USD-13 is a dual N-channel enhancement-mode power MOSFET designed for high-effi ...
Package: T&R | MOQ: 2500 | MPQ: 2500

2N3055AG / The 2N3055AG is a high-power NPN bipolar junction transistor designed for general-purpose switching and amplifier applications. It features a collector-emitter voltage (VCEO) of up to 60V, collector current (IC) capability of 15A, and a total power dissipation of up to 115W at a case temperature of 25°C. The transistor offers a DC current gain (hFE) typically in the range of 20 to 70 and operates with a transition frequency (fT) of approximately 2.5 MHz. It is designed for operation over a wide temperature range of -65°C to +200°C junction temperature. The TO-3 metal package ensures excellent thermal performance and high reliability, making it suitable for power supplies, audio amplifiers, voltage regulators, and industrial control circuits.
2N3055AG

Description: The 2N3055AG is a high-power NPN bipolar junction transistor designed for general-purpose ...
Package: TRAY | MOQ: 100 | MPQ: 100













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