All Products Transistor

AO4882 / The AO4882 is a dual N-channel enhancement-mode power MOSFET designed using advanced trench technology for high efficiency and low switching losses. It features a drain-source voltage (VDS) of 40V and continuous drain current up to 8A per channel, with low on-resistance of typically 19 mΩ at VGS = 10V and 27 mΩ at VGS = 4.5V, enabling efficient power handling. The device supports gate-source voltage up to ±20V and has a low threshold voltage range of approximately 1.4V to 2.4V, making it suitable for logic-level applications. It offers fast switching performance with low gate charge (~6.5 nC at 10V) and low input capacitance (~415 pF), ensuring high-speed operation. Power dissipation is approximately 2W, and it operates over a wide temperature range of -55°C to +150°C. Packaged in SOIC-8, it integrates two MOSFETs in a compact footprint, making it ideal for DC-DC converters, load switching, battery management, and power control applications.
AO4882

Description: The AO4882 is a dual N-channel enhancement-mode power MOSFET designed using advanced trenc ...
Package: T&R | MOQ: 3000 | MPQ: 3000

AO4459 / The AO4459 is a P-channel enhancement-mode power MOSFET designed for load switching and power management applications, utilizing advanced trench technology for low on-resistance and high efficiency. It features a drain-source voltage (VDS) of -30V and continuous drain current of up to -6.5A, with low RDS(on) typically below 46 mΩ at VGS = -10V, minimizing conduction losses. The device supports gate-source voltage up to ±20V and has a threshold voltage around -1V to -2.4V, enabling logic-level operation. It offers fast switching characteristics with low gate charge and rise time around 5–10 ns, making it suitable for high-frequency switching. Power dissipation is approximately 3.1W, and it operates over a wide temperature range from -55°C to +150°C. Packaged in SOIC-8, it is ideal for battery protection, load switching, DC-DC converters, and portable power applications.
AO4459

Description: The AO4459 is a P-channel enhancement-mode power MOSFET designed for load switching and po ...
Package: T&R | MOQ: 3000 | MPQ: 3000

DMN2029USD-13 / The DMN2029USD-13 is a dual N-channel enhancement-mode power MOSFET designed for high-efficiency switching and power management applications. It features a drain-source voltage (VDS) of 20V and continuous drain current of up to 5.8A per channel, with low on-resistance of approximately 25 mΩ at VGS = 4.5V, enabling reduced conduction losses. The device supports gate-source voltage up to ±8V and has a low threshold voltage around 1.5V, making it suitable for logic-level drive applications. It offers fast switching performance with typical gate charge around 10–18 nC and input capacitance approximately 1170 pF . The maximum power dissipation is about 1.2W, and it operates over a wide temperature range from -55°C to +150°C . Packaged in SOIC-8, it integrates two MOSFETs in a compact footprint, making it ideal for DC-DC converters, load switching, battery management, and power control circuits.
DMN2029USD-13

Description: The DMN2029USD-13 is a dual N-channel enhancement-mode power MOSFET designed for high-effi ...
Package: T&R | MOQ: 2500 | MPQ: 2500

2N3055AG / The 2N3055AG is a high-power NPN bipolar junction transistor designed for general-purpose switching and amplifier applications. It features a collector-emitter voltage (VCEO) of up to 60V, collector current (IC) capability of 15A, and a total power dissipation of up to 115W at a case temperature of 25°C. The transistor offers a DC current gain (hFE) typically in the range of 20 to 70 and operates with a transition frequency (fT) of approximately 2.5 MHz. It is designed for operation over a wide temperature range of -65°C to +200°C junction temperature. The TO-3 metal package ensures excellent thermal performance and high reliability, making it suitable for power supplies, audio amplifiers, voltage regulators, and industrial control circuits.
2N3055AG

Description: The 2N3055AG is a high-power NPN bipolar junction transistor designed for general-purpose ...
Package: TRAY | MOQ: 100 | MPQ: 100













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