NAND01GR3B2CZA6E
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| Part Number | NAND01GR3B2CZA6E |
|---|---|
| Manufacturer |
 ST Microelectronics
|
| Description | The NAND01GR3B2CZA6E is a high-density 1Gbit NAND Flash memory developed by Micron Technology (Numonyx/ST lineage), designed for embedded storage applications requiring reliable non-volatile memory. It features a memory organization of 128M × 8 bits, enabling efficient parallel data access and storage operations. The device utilizes NAND flash technology, providing high storage density with efficient erase and program operations. It is based on a parallel interface architecture, allowing straightforward integration with microcontrollers, processors, and embedded systems. The NAND01GR3B2CZA6E supports page-based memory structure (2112 bytes per page), optimizing read/write efficiency and enabling high-speed data handling in storage-intensive applications. Operating at a low supply voltage range of 1.7V to 1.95V (typ. 1.8V), the device is well-suited for low-power and portable designs. It provides access and write cycle times of approximately 25 ns, ensuring responsive data operations. The memory is built with a surface-mount 63-ball VFBGA package, enabling compact PCB layouts while maintaining reliable electrical performance. It operates across an industrial temperature range of -40°C to +85°C, making it suitable for demanding environments. The NAND01GR3B2CZA6E is widely used in embedded systems, industrial controllers, consumer electronics, networking equipment, and data storage applications, where compact, cost-effective, and non-volatile memory solutions are required. |
| Product Group | FLASH |
| MOQ | 1000 pcs |
| SPQ | 1000 pcs |
| Figure/Case | VFBGA 63 |
| Package | T&R Pack |
 PDF Datasheet | |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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NAND01GR3B2CZA6E
NAND01GR3B2CZA6E