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FSC-BT986 / FSC-BT986 is a high-performance Bluetooth module that integrates Bluetooth 5.2 BR/EDR/BLE capabilities, operating on the 2400MHz to 2480MHz ISM frequency band. It offers abundant peripherals and features like power-on reset (POR), I²C, USB, and arithmetic accelerators, which contribute to reducing system costs and size. The module comes with Feasycom’s standard firmware pre-installed, and it supports customization for specific application needs. FSC-BT986 is an ideal choice for designers looking to integrate wireless functionality into their products efficiently.
FSC-BT986

Description: FSC-BT986 is a high-performance Bluetooth module that integrates Bluetooth 5.2 BR/EDR/BLE ...
Package: TRAY | MOQ: 500 | MPQ: 50

UPD78F0515AGA-GAM-AX / The UPD78F0515AGA-GAM-AX is an 8-bit microcontroller from Renesas Electronics, part of the 78K/0 series, designed for general-purpose applications. It features 60KB of flash program memory and 3KB of RAM, operating at a maximum frequency of 20 MHz. The device includes 41 general-purpose input/output (I/O) pins and integrates eight 10-bit analog-to-digital converter (ADC) channels. It supports an operating voltage range from 1.8 V to 5.5 V and functions within an industrial temperature range of -40°C to 85°C. The microcontroller is housed in a 48-pin Low Profile Quad Flat Package (LQFP), measuring 7 mm × 7 mm with a 0.5 mm pin pitch.
UPD78F0515AGA-GAM-AX

Description: The UPD78F0515AGA-GAM-AX is an 8-bit microcontroller from Renesas Electronics, part of the ...
Package: TRAY | MOQ: 1000 | MPQ: 250

CL21A106KOQNNNG / The CL21A106KOQNNNG is a multilayer ceramic capacitor (MLCC) manufactured by Samsung Electro-Mechanics, designed for surface-mount applications. It offers a capacitance of 10 µF with a tolerance of ±10% and a voltage rating of 16V DC. The capacitor features an X5R temperature characteristic, maintaining capacitance stability within ±15% over a temperature range of -55°C to +85°C. Its compact 0805 (2012 metric) package measures 2.00 mm in length, 1.25 mm in width, and 1.25 mm in thickness, making it suitable for various electronic applications where space is a constraint.
CL21A106KOQNNNG

Description: The CL21A106KOQNNNG is a multilayer ceramic capacitor (MLCC) manufactured by Samsung Elect ...
Package: T&R | MOQ: 3000 | MPQ: 3000

CL10A226MP8NUNE / The CL10A226MP8NUNE is a multilayer ceramic capacitor (MLCC) manufactured by Samsung Electro-Mechanics, designed for surface-mount applications. With a capacitance of 22 µF and a voltage rating of 10V, this capacitor is suitable for general-purpose applications requiring stable capacitance over a wide temperature range.
CL10A226MP8NUNE

Description: The CL10A226MP8NUNE is a multilayer ceramic capacitor (MLCC) manufactured by Samsung Elect ...
Package: T&R | MOQ: 3000 | MPQ: 3000

CD4011BM96 / The CD4011BM96 is a quad 2-input NAND gate integrated circuit (IC) from Texas Instruments, part of the 4000B series of CMOS logic devices. It contains four independent NAND gates, each with two inputs, providing versatile logic gate functionality in digital circuits. This IC is widely used in various applications due to its high noise immunity and low power consumption.
CD4011BM96

Description: The CD4011BM96 is a quad 2-input NAND gate integrated circuit (IC) from Texas Instruments, ...
Package: T&R | MOQ: 2500 | MPQ: 2500

C1608X7R1H104K080AA / The C1608X7R1H104K080AA is a multilayer ceramic chip capacitor (MLCC) produced by TDK Corporation, primarily used in surface-mount applications. It has a capacitance value of 0.1µF with a tolerance of ±10%, suitable for general-purpose decoupling and filtering applications. The capacitor is rated for a maximum voltage of 50V DC and operates effectively within a temperature range of -55°C to 125°C. Its compact 0603 (1608 metric) package measures 1.6mm in length, 0.8mm in width, and 0.8mm in thickness, making it ideal for space-constrained designs.
C1608X7R1H104K080AA

Description: The C1608X7R1H104K080AA is a multilayer ceramic chip capacitor (MLCC) produced by TDK Corp ...
Package: T&R | MOQ: 4000 | MPQ: 4000

BZT52C75SS006H / 75V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C75SS006H

Description: 75V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C68SS006F / 68V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C68SS006F

Description: 68V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C62SS006E / 62V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C62SS006E

Description: 62V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C56SS00XW / 56V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C56SS00XW

Description: 56V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C51SS00WW / 51V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C51SS00WW

Description: 51V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C47SS00WV / 47V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C47SS00WV

Description: 47V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C43SS00WU / 43V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C43SS00WU

Description: 43V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C39SS00WT / 39V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C39SS00WT

Description: 39V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C36SS00WS / 36V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C36SS00WS

Description: 36V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C33SS00WR / 33V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C33SS00WR

Description: 33V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C30SS00WQ / 30V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C30SS00WQ

Description: 30V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C27SS00WP / 27V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C27SS00WP

Description: 27V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C24SS00WO / 24V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C24SS00WO

Description: 24V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C22SS00WN / 22V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C22SS00WN

Description: 22V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C20SS00WM / 20V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C20SS00WM

Description: 20V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C18SS00WL / 18V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C18SS00WL

Description: 18V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C16SS00WK / 16V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C16SS00WK

Description: 16V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C15SS00WJ / 15V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C15SS00WJ

Description: 15V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C13SS00WI / 13V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C13SS00WI

Description: 13V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C12SS00WH / 12V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C12SS00WH

Description: 12V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C11SS00WG / 11V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C11SS00WG

Description: 11V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C10SS00WF / 10V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C10SS00WF

Description: 10V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C9V1SS0WE / 9.1V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C9V1SS0WE

Description: 9.1V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C8V2SS0WD / 8.2V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C8V2SS0WD

Description: 8.2V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C7V5SS0WC / 7.5V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C7V5SS0WC

Description: 7.5V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C6V8SS0WB / 6.8V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C6V8SS0WB

Description: 6.8V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C6V2SS0WA / 6.2V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C6V2SS0WA

Description: 6.2V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C5V6SS0W9 / 5.6V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C5V6SS0W9

Description: 5.6V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C5V1SS0W8 / 5.1V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C5V1SS0W8

Description: 5.1V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C4V7SS0W7 / 4.7V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C4V7SS0W7

Description: 4.7V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C4V3SS0W6 / 4.3V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C4V3SS0W6

Description: 4.3V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C3V9SS0W5 / 3.9V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C3V9SS0W5

Description: 3.9V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C3V6SS0W4 / 3.6V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C3V6SS0W4

Description: 3.6V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C3V3SS0W3 / 3.3V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C3V3SS0W3

Description: 3.3V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C3V0SS0W2 / 3.0V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C3V0SS0W2

Description: 3.0V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C2V7SS0W1 / 2.7V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C2V7SS0W1

Description: 2.7V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C2V4SS0WX / 2.4V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C2V4SS0WX

Description: 2.4V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C2V2SS0WZ / 2.2V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C2V2SS0WZ

Description: 2.2V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BZT52C2V0SS0WY / 2.0V Zener Diode 200 mW ±5% Surface Mount SOD-32
BZT52C2V0SS0WY

Description: 2.0V Zener Diode 200 mW ±5% Surface Mount SOD-32 ...
Package: T&R | MOQ: 6000 | MPQ: 3000

BSS84-7-F / The BSS84-7-F is a P-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, optimized for low-voltage, high-speed switching applications. It features a drain-source voltage rating of 50V and a continuous drain current of 130mA at a case temperature of 25°C. The MOSFET offers a maximum on-resistance (Rds(on)) of 10 ohms at a gate-source voltage (Vgs) of 5V and a drain current of 100mA. With a gate threshold voltage (Vgs(th)) of up to 2V at 1mA, it ensures reliable switching performance. The device operates efficiently within a junction temperature range of -55°C to 150°C, making it suitable for various applications requiring compact and efficient switching solutions.
BSS84-7-F

Description: The BSS84-7-F is a P-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BSS123-7-F / The BSS123-7-F is an N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated, designed for low-voltage, high-speed switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 170mA at a case temperature of 25°C. The MOSFET offers a maximum on-resistance (Rds(on)) of 6 ohms at a gate-source voltage (Vgs) of 10V and a drain current of 170mA. With a gate threshold voltage (Vgs(th)) of up to 2V at 1mA, it ensures reliable switching performance. The device operates efficiently within a junction temperature range of -55°C to 150°C, making it suitable for various applications requiring compact and efficient switching solutions.
BSS123-7-F

Description: The BSS123-7-F is an N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated ...
Package: T&R | MOQ: 3000 | MPQ: 3000

BSP75NTA / The BSP75NTA is a self-protected low-side IntelliFET MOSFET switch manufactured by Diodes Incorporated. Designed for high-current switching applications, it features a low on-resistance of 0.385 ohms, supporting continuous drain currents up to 1.3A. The device offers comprehensive protection mechanisms, including short-circuit, overvoltage, overcurrent, and thermal shutdown with auto-restart functionality. Housed in a compact SOT-223 package, the BSP75NTA is suitable for automotive and other space-constrained applications requiring efficient and reliable switching performance.
BSP75NTA

Description: The BSP75NTA is a self-protected low-side IntelliFET MOSFET switch manufactured by Diodes ...
Package: T&R | MOQ: 1000 | MPQ: 1000

BD41003FJ-CE2 / The BD41003FJ-CE2 is a CXPI transceiver from Rohm Semiconductor, specifically designed for automotive applications requiring Clock Extension Peripheral Interface (CXPI) communication. It features a transmission speed range of 18.8 kbps to 20 kbps and supports master/slave switching via an external pin. The device operates with a supply voltage between 7V and 18V and has an operating temperature range from -40°C to 125°C. It also includes built-in functions such as a 30kΩ terminator, power saving mode, data arbitration, under voltage lockout (UVLO), and thermal shutdown (TSD). Additionally, it offers low electromagnetic interference (EMI), high electromagnetic susceptibility (EMS), and robust electrostatic discharge (ESD) protection.
BD41003FJ-CE2

Description: The BD41003FJ-CE2 is a CXPI transceiver from Rohm Semiconductor, specifically designed for ...
Package: T&R | MOQ: 2500 | MPQ: 2500

BC846B,215 / The BC846B,215 is an NPN general-purpose transistor ideal for switching and amplification applications. Manufactured by Nexperia, it comes in a compact SOT23 package, offering high performance with a maximum collector-emitter voltage of 65V and a maximum collector current of 100mA. It features a transition frequency of 100 MHz and is capable of handling power dissipation up to 250mW. The BC846B,215 is suitable for use in a wide range of electronic circuits, thanks to its high current gain and efficient operation across a wide temperature range.
BC846B,215

Description: The BC846B,215 is an NPN general-purpose transistor ideal for switching and amplification ...
Package: T&R | MOQ: 3000 | MPQ: 3000

B82144A2105J000 / The EPCOS B82144A2105J000 is an axial-leaded RF choke designed for high-frequency applications. It features an inductance of 1 mH with a tolerance of ±5%, a maximum DC resistance of 3.8 ohms, and a current rating of 200 mA. Operating within a temperature range of -55°C to 125°C, it offers a self-resonant frequency of 1.2 MHz, making it suitable for RF blocking, filtering, decoupling, and interference suppression in various electronic applications.
B82144A2105J000

Description: The EPCOS B82144A2105J000 is an axial-leaded RF choke designed for high-frequency applicat ...
Package: T&R | MOQ: 1500 | MPQ: 1500













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