VB1330
The image is for illustrative purposes only; please refer to the product data sheet for precise specifications.
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| Part Number | VB1330 |
|---|---|
| Manufacturer |
 VB Semi
|
| Description | The VB1330 from VBsemi is a compact high-performance N-Channel Enhancement Mode Power MOSFET designed for power switching, DC-DC conversion, battery management, motor drive, LED control, and general-purpose power management applications. Based on trench MOSFET technology, the device combines a 30V drain-source voltage rating, high current capability, low on-state resistance, and low gate charge in a space-saving SOT-23-3 package. The VB1330 has a maximum drain-source voltage (VDS) of 30V and a continuous drain current rating of up to 6.5A under the manufacturer's specified thermal conditions. This combination makes it suitable for low-voltage power rails where compact dimensions and relatively high current capability are required. Low conduction loss is one of the key characteristics of the VB1330. Typical RDS(on) is approximately 30mΩ at VGS = 10V and ID = 3.2A. At a lower VGS of 4.5V, typical RDS(on) remains approximately 33mΩ at ID = 2.8A. These low resistance values help minimize conduction losses, improve conversion efficiency, and reduce MOSFET heating in power switching circuits. The device features a gate-source threshold voltage from approximately 0.7V to 2.0V, with a typical value of approximately 1.1V under the datasheet test conditions. The MOSFET is characterized for low RDS(on) at both 4.5V and 10V gate drive, making it suitable for many low-voltage switching and power-management architectures. The VB1330 also provides low gate-charge characteristics for efficient switching. Typical total gate charge is approximately 4.5nC at VGS = 10V, with a maximum of 6.7nC. At VGS = 4.5V, typical total gate charge decreases to approximately 2.1nC. Low gate charge reduces the current required from the MOSFET driver and helps improve efficiency in higher-frequency switching applications. Typical device capacitances include approximately 335pF input capacitance (Ciss), 45pF output capacitance (Coss), and 17pF reverse transfer capacitance (Crss). These characteristics, combined with the low gate charge, make the VB1330 suitable for compact switching regulators and other applications requiring efficient MOSFET switching. The VB1330 uses a standard SOT-23-3 (TO-236) surface-mount package. The compact package has a body length of approximately 2.80mm to 3.04mm and is suitable for high-density PCB designs and automated SMT manufacturing. The combination of 30V VDS rating, 6.5A current capability, 30mΩ typical RDS(on), low gate charge, and compact SOT-23-3 construction makes the VB1330 a practical solution for designers seeking high switching efficiency in limited PCB space. VBsemi also identifies the device for power switches, voltage regulation, battery management, and DC-DC converter applications. The VB1330 is widely used in DC-DC converters, load switches, battery management systems, battery protection circuits, motor drive circuits, LED drivers, power management modules, portable electronics, consumer electronics, embedded systems, low-voltage power supplies, switching regulators, power tools, and general-purpose power switching applications requiring a compact 30V N-channel MOSFET with low on-resistance and low gate charge. |
| Product Group | Transistor |
| MOQ | 3000 pcs |
| SPQ | 3000 pcs |
| Figure/Case | SOT-23 |
| Package | T&R Pack |
| Ship From | Hong Kong |
| Shipment Way | DHL / Fedex / TNT / UPS / Others |
| Delivery Term | Ex-Works |
| Send RFQ | sales@signalhk.com |
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VB1330
VB1330